WIRE DISCHARGE MACHINING APPARATUS AND MANUFACTURING METHOD FOR SEMICONDUCTOR WAFERS USING THE SAME

• US 20150053650A1
• Filed: 10/19/2012
• Published: 02/26/2015
• Est. Priority Date: 04/12/2012
• Status: Abandoned Application

• Current Assignee: Mitsubishi Electric Corporation
• Original Assignee: Mitsubishi Electric Corporation
• Inventors: Miyake, Hidetaka, Itokazu, Atsushi, Nakanishi, Yosuke
• Application Number:
  US14/390,189
• Publication Number:
  US 20150053650A1
• Time in Patent Office: Days
• US Class Current: 219/69.12
• CPC Class Codes: B23H 1/028 for multiple gap machining
• CPC Class Codes: B23H 11/00 Auxiliary apparatus or details, not otherwise provided for
• CPC Class Codes: B23H 7/10 Supporting, winding or electrical connection of wire-electrode
• CPC Class Codes: B23H 7/105 Wire guides
• CPC Class Codes: B23H 9/00 Machining specially adapted for treating particular metal objects or for obtaining special effects or results on metal objects heat treatment by cathodic discharge C21D1/38

Abstract

A wire discharge machining apparatus including a plurality of main guide rollers disposed in parallel at intervals, one wire that is wound between the guide rollers while being spaced apart from one another at a fixed pitch to form cutting wire sections between a pair of guide rollers and travels according to the rotation of the main guide rollers, and power feed terminal units that feed electric power to wires of the cutting wire sections. The wire discharge machining apparatus performs cutting of a work piece with the cutting wire sections, suspends cut-out of semiconductor wafers from the work piece in a state in which a part of the semiconductor wafers is connected to the work piece, brings the wires of the cutting wire sections close to one cut surfaces, and scans the cut surfaces in a discharge-machined state.

Claims

1. A wire discharge machining apparatus comprising:

a pair of guide rollers disposed in parallel at intervals;

a wire that is wound between the pair of guide rollers a plurality of times while being spaced apart from each other at a fixed pitch to form a parallel wire section between the pair of guide rollers and travels according to the rotation of the guide rollers;

a pair of damping guide rollers that are provided between the pair of guide rollers, follow and come into contact with the parallel wire section, and form a plurality of damped cutting wire sections;

a plurality of power feed terminals that feed electric power to each of the cutting wire sections; and

a unit that moves a work piece to the cutting wire sections relatively in a parallel direction of wires forming the cutting wire sections and a direction perpendicular to the parallel direction of the wires forming the cutting wire sections in such a manner as to bring the wires of the cutting wire sections closer to either one of a pair of cut surfaces formed by being cut by the wires of the cutting wire sections than the other, wherein

the wire discharge machining apparatus scans either one of the cut surfaces in a discharge-machined state to thereby simultaneously finish the cut surfaces.

2. The wire discharge machining apparatus according to claim 1, further comprising:

cutting-time wafer supporting sections that support the wafers during the cutting; and

finishing-time wafer supporting sections that support the wafers during the finishing, wherein

the cutting wire sections include a function of not completely separating a plurality of wafers cut out from the work piece by discharge machining of the cutting wire sections and, after completing the finishing to leave a connecting portion in a state in which a part of the wafers is integral with the work piece, cutting the connecting portion.

3. The wire discharge machining apparatus according to claim 2, wherein the finishing-time wafer supporting sections are configured to repeat scanning of wafer surfaces a plurality of times while performing the discharge machining by the cutting wire sections.

4. The wire discharge machining apparatus according to claim 2, further comprising wafer-supporting-section insertion control plates that control behavior for bringing the cutting-time wafer supporting sections and the finishing-time wafer supporting sections close to and away from the work piece, wherein

the cutting-time wafer supporting sections and the finishing-time wafer supporting sections are parallel to a stretching direction of the cutting wire sections, disposed on both sides of the work piece, and configured to move substantially in parallel to the stretching direction of the cutting wire sections.

5. The wire discharge machining apparatus according to claim 2, wherein

the cutting-time wafer supporting sections and the machining-time wafer supporting sections include inserting sections that are formed by cutting, and inserted into machined grooves, which are to be formed as inter-wafer regions, and retain wafer intervals, insertion supporting sections that support the inserting sections, and rolling rollers connected to the insertion supporting sections, wherein

an insertion amount of the inserting sections into the machined grooves formed in the work piece is controlled when the rolling rollers roll along the surface shape of the wafer-supporting-section insertion control plates.

6. The wire discharge machining apparatus according to claim 5, wherein

the inserting sections are thin line bundle sections formed by binding thin lines, and

the cutting-time wafer supporting sections and the finishing-time wafer supporting sections are arranged on both sides of the work piece, pressed against an outer surface of the work piece substantially in parallel from a stretching direction of the cutting wire sections, and configured to hold the wafers and prevent vibration of the wafers when the thin line bundle sections of the cutting-time wafer supporting sections and the finishing-time wafer supporting sections are inserted into the machined grooves formed in the work piece.

7. The wire discharge machining apparatus according to claim 4, wherein the surface shape of the wafer-supporting-section insertion control plates are similar to an external shape of the work piece.

8. The wire discharge machining apparatus according to claim 4, wherein the wafer-supporting-section insertion control plates move relatively to the cutting-time wafer supporting sections and the finishing-time wafer supporting sections in a direction perpendicular to a parallel direction of each of the wires forming the cutting wire sections.

15. The wire discharge machining apparatus according to claim 5, wherein the surface shape of the wafer-supporting-section insertion control plates are similar to an external shape of the work piece.

16. The wire discharge machining apparatus according to claim 5, wherein the wafer-supporting-section insertion control plates move relatively to the cutting-time wafer supporting sections and the finishing-time wafer supporting sections in a direction perpendicular to a parallel direction of each of the wires forming the cutting wire sections.

9. A manufacturing method for semiconductor wafers using a wire discharge machining apparatus including:

a plurality of guide rollers disposed in parallel at intervals;

a wire that is wound between the plurality of guide rollers while being spaced apart from each other at a fixed pitch to form cutting wire sections between a pair of the guide rollers within the plurality of guide rollers and travels according to the rotation of the guide rollers;

power feed terminals that feed electric power to wires of the cutting wire sections; and

a unit that moves a work piece to the cutting wire sections in a parallel direction of wires forming each of the cutting wire sections and a direction perpendicular to the parallel direction of the wires forming the cutting wire sections in such a manner as to bring the wires of the cutting wire sections closer to either one of a pair of cut surfaces formed by being cut by the wires of the cutting wire sections than to the other, the manufacturing method comprising;

a first step of cutting a work piece with the cutting wire sections and cutting out a plurality of wafers from the work piece; and

a second step of bringing the wires of the cutting wire sections closer to either one of a pair of cut surfaces formed by being cut at the first step using the wires of the cutting wire sections than to the other and scanning the cut surfaces in a discharge-machined state.

10. The manufacturing method for semiconductor wafers according to claim 9, wherein

the first step includes a step of cutting the work piece with the cutting wire sections and suspending a cut-out of semiconductor wafers from the work piece in a state in which a part of the semiconductor wafers is connected to the work piece, wherein

in the second step, the cut surfaces cut at the first step are scanned in the discharge-machined state using the wires of the cutting wire sections.

11. The manufacturing method for semiconductor wafers according to claim 9, wherein the second step is performed a plurality of times.

12. The manufacturing method for semiconductor wafers according to claim 9, wherein, after the second step, a third step of arranging the wires in positions where the cut-out of the semiconductor wafers is suspended, reciprocatingly moving the wires in a thickness direction of gaps cut by the wires while performing discharge machining, and simultaneously advancing the suspended cut-out step is performed.

13. The manufacturing method for semiconductor wafers according to claim 9, wherein, after the second step, a fourth step of arranging the wires in positions where cut-out of the semiconductor wafers is suspended, performing cutting by discharge machining in a direction orthogonal to a traveling direction in the wire cutting process to cut off the semiconductor wafers from the work piece, and forming the cut-off portions as orientation flat surfaces is performed.

14. The manufacturing method for semiconductor wafers according to claim 9, wherein the work piece is a semiconductor ingot containing at least one of carbide or nitride as a component.