Capacitor and Semiconductor Device

• US 20150053973A1
• Filed: 08/19/2014
• Published: 02/26/2015
• Est. Priority Date: 08/23/2013
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Yamazaki, Shunpei, Koezuka, Junichi, Katayama, Masahiro, Jintyou, Masami
• Granted Patent: US 10,134,781 B2
• Time in Patent Office: Days
• US Class Current: 257/43
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 27/1255 integrated with passive devices, e.g. auxiliary capacitors
• CPC Class Codes: H01L 29/94 Metal-insulator-semiconductors, e.g. MOS

Abstract

A semiconductor device has an insulating surface provided with a transistor and a capacitor. The transistor includes a gate electrode, an oxide semiconductor film overlapping with the gate electrode, a gate insulating film between the gate electrode and the oxide semiconductor film, and a first conductive film serving as a pair of electrodes in contact with the oxide semiconductor film. An oxide insulating film in contact with the oxide semiconductor film, a metal oxide film over the oxide insulating film, and a second conductive film serving as a pixel electrode which is in an opening in the metal oxide film and is in contact with the first conductive film are provided. The capacitor includes a film having conductivity over the gate insulating film, the second conductive film, and the metal oxide film provided between the film having conductivity and the second conductive film.

Claims

1. A capacitor comprising:

a film containing indium and a metal element selected from aluminum, gallium, yttrium, zirconium, lanthanum, cerium, and neodymium;

a metal oxide film over the film; and

a light-transmitting conductive film over the metal oxide film.

2. The capacitor according to claim 1, wherein the metal oxide film contains aluminum oxide, aluminum oxynitride, gallium oxide, gallium oxynitride, yttrium oxide, yttrium oxynitride, hafnium oxide, hafnium oxynitride, titanium oxide, tantalum oxide, or tantalum oxynitride.

3. The capacitor according to claim 1, further comprising a nitride insulating film in contact with the metal oxide film.

4. The capacitor according to claim 3, wherein the nitride insulating film contains hydrogen.

5. The capacitor according to claim 3,

wherein the metal oxide film is an aluminum oxide film, and

wherein the nitride insulating film is a silicon nitride film.

6. A semiconductor device comprising:

a transistor comprising;

an oxide semiconductor film including a channel region on an insulating surface; and

a source electrode and a drain electrode connected to the oxide semiconductor film;

an oxide insulating film over and in contact with the channel region;

a metal oxide film over the oxide insulating film;

a light-transmitting conductive film over the metal oxide film; and

a capacitor comprising;

a first electrode on the insulating surface;

the metal oxide film over the first electrode; and

the light-transmitting conductive film as a second electrode over the metal oxide film,

wherein the oxide semiconductor film and the first electrode contain a same material.

7. The semiconductor device according to claim 6, wherein the oxide semiconductor film and the first electrode each contain indium and a metal element selected from aluminum, gallium, yttrium, zirconium, lanthanum, cerium, and neodymium.

8. The semiconductor device according to claim 6, wherein the metal oxide film contains aluminum oxide, aluminum oxynitride, gallium oxide, gallium oxynitride, yttrium oxide, yttrium oxynitride, hafnium oxide, hafnium oxynitride, titanium oxide, tantalum oxide, or tantalum oxynitride.

9. The semiconductor device according to claim 6, wherein the oxide semiconductor film and the first electrode each have a multilayer structure.

10. The semiconductor device according to claim 6, wherein the oxide insulating film contains silicon and oxygen such that the oxygen content is higher than that in a stoichiometric composition.

11. The semiconductor device according to claim 6, wherein the light-transmitting conductive film is a pixel electrode connected to one of the source electrode and the drain electrode.

12. A semiconductor device comprising:

a transistor comprising;

an oxide semiconductor film including a channel region on an insulating surface; and

a source electrode and a drain electrode connected to the oxide semiconductor film;

an oxide insulating film over and in contact with the channel region;

a stacked film comprising a metal oxide film and a nitride insulating film over the oxide insulating film;

a light-transmitting conductive film over the stacked film; and

a capacitor comprising;

a first electrode on the insulating surface;

the stacked film over the first electrode; and

the light-transmitting conductive film as a second electrode over the stacked film,

wherein the oxide semiconductor film and the first electrode contain a same material.

13. The semiconductor device according to claim 12, wherein the nitride insulating film contains hydrogen.

14. The semiconductor device according to claim 12, wherein in the stacked film, the nitride insulating film is over the metal oxide film.

15. The semiconductor device according to claim 12, wherein in the stacked film, the metal oxide film is over the nitride insulating film.

16. The semiconductor device according to claim 12, wherein the oxide semiconductor film and the first electrode each contain indium and a metal element selected from aluminum, gallium, yttrium, zirconium, lanthanum, cerium, and neodymium.

17. The semiconductor device according to claim 12, wherein the metal oxide film contains aluminum oxide, aluminum oxynitride, gallium oxide, gallium oxynitride, yttrium oxide, yttrium oxynitride, hafnium oxide, hafnium oxynitride, titanium oxide, tantalum oxide, or tantalum oxynitride.

18. The semiconductor device according to claim 12, wherein the oxide semiconductor film and the first electrode each have a multilayer structure.

19. The semiconductor device according to claim 12, wherein the oxide insulating film contains silicon and oxygen such that the oxygen content is higher than that in a stoichiometric composition.

20. The semiconductor device according to claim 12, wherein the light-transmitting conductive film is a pixel electrode connected to one of the source electrode and the drain electrode.