SEMICONDUCTOR DEVICE
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Accused Products
Abstract
In a transistor having a top-gate structure in which a gate electrode layer overlaps with an oxide semiconductor layer which faints a channel region with a gate insulating layer interposed therebetween, when a large amount of hydrogen is contained in the insulating layer, hydrogen is diffused into the oxide semiconductor layer because the insulating layer is in contact with the oxide semiconductor layer; thus, electric characteristics of the transistor are degraded. An object is to provide a semiconductor device having favorable electric characteristics. An insulating layer in which the concentration of hydrogen is less than 6×1020 atoms/cm3 is used for the insulating layer being in contact with oxide semiconductor layer which forms the channel region. Using the insulating layer, diffusion of hydrogen can be prevented and a semiconductor device having favorable electric characteristics can be provided.
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Citations
23 Claims
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1. (canceled)
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2. A semiconductor device comprising:
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an insulating layer including a first region; an oxide semiconductor layer over the insulating layer, the oxide semiconductor layer including a second region and a third region; a source electrode layer electrically connected to the oxide semiconductor layer; a drain electrode layer electrically connected to the oxide semiconductor layer; and a gate insulating layer over the source electrode layer and the drain electrode layer, the gate insulating layer including a fourth region, wherein; the oxide semiconductor layer contains indium, zinc and a metal other than indium and zinc; the first region is in direct contact with the second region; the third region is in direct contact with the fourth region; and a concentration of hydrogen in a part of the insulating layer is greater than zero and less than 6×
1020 atoms/cm3. - View Dependent Claims (3, 4, 5, 6, 7, 8, 9)
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10. A semiconductor device comprising:
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an insulating layer including a first region; an oxide semiconductor layer over the insulating layer, the oxide semiconductor layer including a second region and a third region; a source electrode layer electrically connected to the oxide semiconductor layer; a drain electrode layer electrically connected to the oxide semiconductor layer; and a gate insulating layer over the source electrode layer and the drain electrode layer, the gate insulating layer including a fourth region, wherein; the oxide semiconductor layer includes a crystal portion; the first region is in direct contact with the second region; the third region is in direct contact with the fourth region; and a concentration of hydrogen in a part of the insulating layer is greater than zero and less than 6×
1020 atoms/cm3. - View Dependent Claims (11, 12, 13, 14, 15, 16)
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17. A semiconductor device comprising:
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a first insulating layer; a second insulating layer over the first insulating layer, the second insulating layer including a first region; an oxide semiconductor layer over the second insulating layer, the oxide semiconductor layer including a second region and a third region; a source electrode layer electrically connected to the oxide semiconductor layer; a drain electrode layer electrically connected to the oxide semiconductor layer; and a gate insulating layer over the source electrode layer and the drain electrode layer, the gate insulating layer including a fourth region, wherein; the first insulating layer contains silicon and nitrogen; the second insulating layer contains silicon and oxygen; the first region is in direct contact with the second region; the third region is in direct contact with the fourth region; and a concentration of hydrogen in a part of the second insulating layer is greater than zero and less than 6×
1020 atoms/cm3. - View Dependent Claims (18, 19, 20, 21, 22, 23)
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Specification