DNA SEQUENCING USING A SUSPENDED CARBON NANOTUBE

• US 20150060275A1
• Filed: 08/30/2013
• Published: 03/05/2015
• Est. Priority Date: 08/30/2013
• Status: Active Grant

• Current Assignee: GlobalFoundries, Inc.
• Original Assignee: International Business Machines Corporation
• Inventors: Afzali-Ardakani, Ali, Franklin, Aaron D., Tulevski, George S.
• Granted Patent: US 9,371,561 B2
• Time in Patent Office: Days
• US Class Current: 204/451
• CPC Class Codes: C12Q 1/6869 Methods for sequencing
• CPC Class Codes: C12Q 2563/155 Particles of a defined size, e.g. nanoparticles
• CPC Class Codes: G01N 27/44791 Microapparatus sample containers with integrated microfluidic structures B01L3/5027
• CPC Class Codes: G01N 33/48721 Investigating individual macromolecules, e.g. by translocation through nanopores Coulter counters in general G01N15/12; fabrication methods for nanoscale apertures B81B1/00; sequencing of nucleic acids C12Q1/68

Abstract

A technique is provided for forming a nanodevice for sequencing. A bottom metal contact is disposed at a location in an insulator that is on a substrate. A nonconducting material is disposed on top of the bottom metal contact and the insulator. A carbon nanotube is disposed on top of the nonconducting material. Top metal contacts are disposed on top of the carbon nanotube at the location of the bottom metal contact, where the top metal contacts are formed at opposing ends of the carbon nanotube at the location. The carbon nanotube is suspended over the bottom metal contact at the location, by etching away the nonconducting material under the carbon nanotube to expose the bottom metal contact as a bottom of a trench, while leaving the nonconducting material immediately under the top metal contacts as walls of the trench.

Claims

1. A method of forming a nanodevice for sequencing, the method comprising:

disposing a bottom metal contact at a location in an insulator that is on a substrate;

disposing a nonconducting material on top of the bottom metal contact and the insulator;

disposing a carbon nanotube on top of the nonconducting material;

disposing top metal contacts on top of the carbon nanotube at the location of the bottom metal contact, wherein the top metal contacts are formed at opposing ends of the carbon nanotube at the location; and

suspending the carbon nanotube over the bottom metal contact at the location, by etching away the nonconducting material under the carbon nanotube to expose the bottom metal contact as a bottom of a trench, while leaving the nonconducting material immediately under the top metal contacts as walls of the trench.

2. The method of claim 1, wherein the carbon nanotube is suspended over the trench.

3. The method of claim 1, wherein the top metal contacts are on opposing sides of the trench.

4. The method of claim 1, wherein the top metal contacts are electrically connected to one another through the carbon nanotube.

5. The method of claim 1, further comprising filling the trench with buffer solution such that the buffer solution does not contact the top metal contacts and the carbon nanotube.

6. The method of claim 1, further comprising filling the trench with buffer solution fully such that the buffer solution does contact the top metal contacts and the carbon nanotube.

7. The method of claim 1, wherein a thickness of the nonconducting material determines a depth of the trench.

8. The method of claim 1, wherein a distance separating the top metal contacts determines a width of the trench.

9. The method of claim 1, wherein a length of the top metal contacts determines a length of the trench.

10. A method of sequencing, the method comprising:

translocating a target molecule in a trench on a substrate of a nanodevice, wherein the nanodevice includes a carbon nanotube suspended over the trench by top metal contacts, and includes a bottom metal contact as a bottom of the trench;

passing a buffer solution both below and above the carbon nanotube, wherein the carbon nanotube is functionalized with an organic compound having two different functional groups on either end in which one functional group attaches to the carbon nanotube and another functional group interacts with the target molecule;

measuring a first current flowing between the top metal contacts through the carbon nanotube; and

measuring a change in the first current based on a base of the target molecule in the trench interacting with the carbon nanotube to change a conductance of the carbon nanotube.

11. The method of claim 10, wherein the base of the target molecule is identified according to the change in first current measured.

12. The method of claim 10, further comprising measuring a second current flowing between the carbon nanotube and the bottom metal contact;

and

measuring a change in the second current based the base of the target molecule in the trench interacting with the carbon nanotube to provide an electrical current path between the carbon nanotube and the bottom metal contact.

13. The method of claim 12, wherein the base of the target molecule is identified according to the change in second current measured.

14-20. -20. (canceled)