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SEMICONDUCTOR DEVICE

  • US 20150060845A1
  • Filed: 08/28/2014
  • Published: 03/05/2015
  • Est. Priority Date: 09/05/2013
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a first conductive film and a second conductive film over an insulating surface;

    a first insulating film over the first conductive film and the second conductive film;

    a semiconductor film over the first insulating film, the semiconductor film overlapping with the first conductive film;

    a third conductive film electrically connected to the semiconductor film;

    a fourth conductive film electrically connected to the semiconductor film, the fourth conductive film overlapping with the second conductive film;

    a second insulating film including a first region and a second region, over the semiconductor film, the third conductive film, and the fourth conductive film; and

    a fifth conductive film over the second region, the fifth conductive film overlapping with the fourth conductive film,wherein a thickness of the second region is smaller than a thickness of the first region.

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