SEMICONDUCTOR DEVICE

• US 20150060845A1
• Filed: 08/28/2014
• Published: 03/05/2015
• Est. Priority Date: 09/05/2013
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: SHISHIDO, Hideaki
• Granted Patent: US 10,008,513 B2
• Time in Patent Office: Days
• US Class Current: 257/43
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 27/1255 integrated with passive devices, e.g. auxiliary capacitors
• CPC Class Codes: H01L 29/78648 arranged on opposing sides of the channel
• CPC Class Codes: H01L 29/78678 with inverted-type structure, e.g. with bottom gate

Abstract

A semiconductor device includes a first and a second conductive films over an insulating surface; a first insulating film over the insulating surface and the first and the second conductive films; a semiconductor film overlapping with the first conductive film with the first insulating film provided therebetween; a third conductive film in contact with the semiconductor film; a fourth conductive film in contact with the semiconductor film and overlapping with the second conductive film with the first insulating film provided therebetween; a second insulating film including a thick region and a thin region, over the semiconductor film and the third and the fourth conductive films; a fifth conductive film overlapping with the semiconductor film with the second insulating film provided therebetween; and a sixth conductive film overlapping with the fourth conductive film over the thin region of the second insulating film.

Claims

1. A semiconductor device comprising:

a first conductive film and a second conductive film over an insulating surface;

a first insulating film over the first conductive film and the second conductive film;

a semiconductor film over the first insulating film, the semiconductor film overlapping with the first conductive film;

a third conductive film electrically connected to the semiconductor film;

a fourth conductive film electrically connected to the semiconductor film, the fourth conductive film overlapping with the second conductive film;

a second insulating film including a first region and a second region, over the semiconductor film, the third conductive film, and the fourth conductive film; and

a fifth conductive film over the second region, the fifth conductive film overlapping with the fourth conductive film,

wherein a thickness of the second region is smaller than a thickness of the first region.

2. The semiconductor device according to claim 1, wherein the semiconductor film is an oxide semiconductor film.

3. The semiconductor device according to claim 1, wherein the semiconductor film is a polycrystalline silicon film.

4. The semiconductor device according to claim 1, further comprising a sixth conductive film over the second insulating film,

wherein the sixth conductive film overlaps with the semiconductor film.

5. The semiconductor device according to claim 1, further comprising:

a third insulating film over the second insulating film and the fifth conductive film; and

a display element over the third insulating film,

wherein the display element is electrically connected to the fourth conductive film.

6. The semiconductor device according to claim 1, wherein the second conductive film is electrically connected to the fifth conductive film.

7. A semiconductor device comprising:

a first conductive film and a second conductive film over an insulating surface;

a first insulating film including a first region and a second region, over the first conductive film and the second conductive film;

a semiconductor film over the first insulating film, the semiconductor film overlapping with the first conductive film;

a third conductive film electrically connected to the semiconductor film;

a fourth conductive film electrically connected to the semiconductor film, the fourth conductive film overlapping with the second conductive film;

a second insulating film over the semiconductor film, the third conductive film, and the fourth conductive film; and

a fifth conductive film over the second insulating film, the fifth conductive film overlapping with the fourth conductive film,

wherein a thickness of the second region is smaller than a thickness of the first region, and

wherein the second region is provided between the second conductive film and the fourth conductive film.

8. The semiconductor device according to claim 7, wherein the semiconductor film is an oxide semiconductor film.

9. The semiconductor device according to claim 7, wherein the semiconductor film is a polycrystalline silicon film.

10. The semiconductor device according to claim 7, further comprising a sixth conductive film over the second insulating film,

wherein the sixth conductive film overlaps with the semiconductor film.

11. The semiconductor device according to claim 7, further comprising:

a third insulating film over the second insulating film and the fifth conductive film; and

a display element over the third insulating film,

wherein the display element is electrically connected to the fourth conductive film.

12. The semiconductor device according to claim 7, wherein the second conductive film is electrically connected to the fifth conductive film.

13. A semiconductor device comprising:

a first conductive film and a second conductive film over an insulating surface;

a first insulating film including a first region and a second region, over the first conductive film and the second conductive film;

a semiconductor film over the first insulating film, the semiconductor film overlapping with the first conductive film;

a third conductive film electrically connected to the semiconductor film;

a fourth conductive film electrically connected to the semiconductor film, the fourth conductive film overlapping with the second conductive film;

a second insulating film including a third region and a fourth region, over the semiconductor film, the third conductive film, and the fourth conductive film; and

a fifth conductive film over the fourth region, the fifth conductive film overlapping with the fourth conductive film,

wherein a thickness of the second region is smaller than a thickness of the first region,

wherein a thickness of the fourth region is smaller than a thickness of the third region, and

wherein the second region is provided between the second conductive film and the fourth conductive film.

14. The semiconductor device according to claim 13, wherein the semiconductor film is an oxide semiconductor film.

15. The semiconductor device according to claim 13, wherein the semiconductor film is a polycrystalline silicon film.

16. The semiconductor device according to claim 13, further comprising a sixth conductive film over the second insulating film,

wherein the sixth conductive film overlaps with the semiconductor film.

17. The semiconductor device according to claim 13, further comprising:

a third insulating film over the second insulating film and the fifth conductive film; and

a display element over the third insulating film,

wherein the display element is electrically connected to the fourth conductive film.

18. The semiconductor device according to claim 13, wherein the second conductive film is electrically connected to the fifth conductive film.