SEMICONDUCTOR DEVICE

• US 20150061111A1
• Filed: 04/07/2014
• Published: 03/05/2015
• Est. Priority Date: 09/05/2013
• Status: Active Grant

• Current Assignee: Mitsubishi Electric Corporation
• Original Assignee: Mitsubishi Electric Corporation
• Inventors: IMOTO, Yuji, USUI, Osamu, NAGAI, Miho
• Granted Patent: US 9,064,846 B2
• Time in Patent Office: Days
• US Class Current: 257/714
• CPC Class Codes: F28F 3/02 Elements or assemblies thereof with means for increasing heat-transfer area, e.g. with fins, with recesses, with corrugations F28F3/08 takes precedence
• CPC Class Codes: H01L 23/46 involving the transfer of heat by flowing fluids H01L23/42, H01L23/44 take precedence
• CPC Class Codes: H01L 23/473 by flowing liquids H01L23/4332, H01L23/4338 take precedence
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

A semiconductor device includes a semiconductor element, a base plate having an upper surface on which the semiconductor element is mounted, a cooling fin disposed on a lower surface of the base plate, a jacket disposed in a sealing manner on the lower surface of the base plate, the jacket surrounding the cooling fin, and a header partition wall formed separately from the jacket and fixed to the jacket on the lower side of the cooling fin in the jacket, the header partition wall forming a header and a flow path for causing a refrigerant flow to the cooling fin.

Claims

1. A semiconductor device, comprising:

a semiconductor element;

a base plate having an upper surface on which said semiconductor element is mounted;

a cooling fin disposed on a lower surface of said base plate;

a jacket disposed in a sealing manner on the lower surface of said base plate, said jacket surrounding said cooling fin; and

a header partition wall formed separately from said jacket and fixed to said jacket on the lower side of said cooling fin in said jacket, said header partition wall forming a header and a flow path for causing a refrigerant flow to said cooling fin.

2. The semiconductor device according to claim 1, wherein said header partition wall is formed into a T-shape.

3. The semiconductor device according to claim 1, wherein said header partition wall is formed exchangeably.

4. The semiconductor device according to claim 1, wherein said header partition wall is formed so as to be dividable into a plurality of pieces.

5. The semiconductor device according to claim 1, wherein

said flow path includes an inflow-side opening and an outflow-side opening, and

said outflow-side opening is formed to be smaller than said inflow-side opening.

6. The semiconductor device according to claim 1, wherein

said flow path includes an inflow-side opening and an outflow-side opening,

said header partition wall includes a blocking portion that blocks part of said inflow-side opening and said outflow-side opening, and

said blocking portion blocks the part of said inflow-side opening and said outflow-side opening to change a direction in which a refrigerant flows.

7. The semiconductor device according to claim 1, further comprising a header divider formed separately from said jacket and disposed, in said jacket, at a position corresponding to a dividing portion that divides a region in said base plate where said cooling fin is disposed into a plurality of regions.

8. The semiconductor device according to claim 7, wherein said header divider is formed to be changeable in its position in said jacket.

9. The semiconductor device according to claim 1, wherein said semiconductor element is a wide band gap semiconductor element.