VERTICAL CAVITY SURFACE EMITTING LASER

• US 20150063393A1
• Filed: 11/11/2014
• Published: 03/05/2015
• Est. Priority Date: 05/25/2012
• Status: Abandoned Application

• Current Assignee: Murata Manufacturing Co Limited
• Original Assignee: Murata Manufacturing Co Limited
• Inventors: IWATA, Keiji, MATSUBARA, Ippei, KONA, Takayuki, WATANABE, Hiroshi, YANAGASE, Masashi
• Application Number:
  US14/537,995
• Publication Number:
  US 20150063393A1
• Time in Patent Office: Days
• US Class Current: 372/45.01
• CPC Class Codes: H01S 2301/176 Specific passivation layers on surfaces other than the emission facet
• CPC Class Codes: H01S 5/0208 Semi-insulating substrates
• CPC Class Codes: H01S 5/02345 Wire-bonding
• CPC Class Codes: H01S 5/04256 characterised by the configuration
• CPC Class Codes: H01S 5/04257 having positive and negative electrodes on the same side of the substrate
• CPC Class Codes: H01S 5/183 having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
• CPC Class Codes: H01S 5/18311 using selective oxidation
• CPC Class Codes: H01S 5/34 comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers H01S5/36 takes precedence
• CPC Class Codes: H01S 5/3432 the whole junction comprising only (AI)GaAs
• CPC Class Codes: H01S 5/423 having a vertical cavity

Abstract

A vertical cavity surface emitting laser includes a base substrate formed by a semi-insulating semiconductor, a light-emitting region multilayer portion including an N-type semiconductor contact layer, an N-type semiconductor multilayer-film reflecting layer, an N-type semiconductor clad layer, an active layer provided with a quantum well, a P-type semiconductor clad layer, a P-type semiconductor multilayer-film reflecting layer, and a P-type semiconductor contact layer, which are formed on the surface of the base substrate sequentially, an anode electrode formed on the surface of the P-type semiconductor contact layer, and a cathode electrode that is connected to the N-type semiconductor clad layer. The cathode electrode is formed on the base substrate at the side of the light-emitting region multilayer portion. A groove is formed among respective vertical cavity surface emitting lasers.

Claims

1. A vertical cavity surface emitting laser comprising:

a base substrate;

a light-emitting region multilayer portion including an N-type semiconductor multilayer-film reflecting layer, an active layer provided with a quantum well, and a P-type semiconductor multilayer-film reflecting layer, which are formed on a surface of the base substrate;

an anode electrode connected to the P-type semiconductor multilayer-film reflecting layer, and

a cathode electrode connected to the N-type semiconductor multilayer-film reflecting layer,

at least a portion of a predetermined thickness of the base substrate at a side of the light-emitting region multilayer portion being formed by a semi-insulating semiconductor,

the cathode electrode being formed on the base substrate at a side of the surface,

a plurality of groups of light emitting element constituent components each constituted by the light-emitting region multilayer portion, the anode electrode, and the cathode electrode being formed on the base substrate, and

the plurality of light emitting element constituent components being isolated individually and the plurality of light emitting element constituent components being driven independently.

2. The vertical cavity surface emitting laser according to claim 1,

wherein a void portion is provided among the plurality of light emitting element constituent components and the void portion has a shape recessed to an inner side portion of the base substrate from the surface of the base substrate.

3. The vertical cavity surface emitting laser according to claim 2, wherein an anode pad electrode which is connected to the anode electrode and a cathode pad electrode which is connected to the cathode electrode are provided for each of the light emitting element constituent components divided by the void portion, and

the anode pad electrode and the cathode pad electrode are formed on a surface of an insulating layer arranged on the surface of the base substrate on a region different from the light-emitting region multilayer portion, the anode electrode, and the cathode electrode.

4. The vertical cavity surface emitting laser according to claim 3,

wherein adjacent light emitting element constituent components are arranged on the base substrate at the side of the surface such that anode pad electrodes are adjacent to each other or cathode pad electrodes are adjacent to each other.

5. The vertical cavity surface emitting laser according to claim 3,

wherein two cathode pad electrodes are provided, and

the two cathode pad electrodes are arranged on the surface of the insulating layer such that the anode pad electrode is interposed between the two cathode pad electrodes.

6. The vertical cavity surface emitting laser according to claim 3,

wherein an insulating film is formed to have a shape excluding at least a part of the anode pad electrode and the cathode pad electrode.

7. The vertical cavity surface emitting laser according to claim 2,

wherein the void portion has a tapered shape so that a width between adjacent light emitting element constituent components is narrower toward a side of the base substrate from a side of the anode electrode.

8. The vertical cavity surface emitting laser according to claim 1,

wherein a resistivity of the semi-insulating semiconductor forming the base substrate is equal to or higher than 1.0×

10⁷ Ω

·

cm.

9. The vertical cavity surface emitting laser according to claim 1,

wherein an interval between close electrodes of adjacent light emitting element constituent components is equal to or larger than 0.5 μ

m.

10. The vertical cavity surface emitting laser according to claim 1,

wherein a portion of the base substrate, which has a predetermined thickness from a surface at a side of the light emitting element constituent components, is formed by the semi-insulating semiconductor, and

an N-type semiconductor substrate is arranged on the semi-insulating semiconductor at a side opposite to the light emitting element constituent components.