MASK FOR EXPOSURE, METHOD OF FABRICATING THE SAME, AND METHOD OF FABRICATING DISPLAY PANEL USING THE MASK

• US 20150064857A1
• Filed: 03/25/2014
• Published: 03/05/2015
• Est. Priority Date: 09/05/2013
• Status: Abandoned Application

• Current Assignee: Samsung Display Company Limited (Samsung Electronics Co. Ltd.)
• Original Assignee: Samsung Display Company Limited (Samsung Electronics Co. Ltd.)
• Inventors: Lee, Hyunjoo, Kim, Bong-Yeon, Ju, Jinho, KANG, MIN, Lee, DongEon, Son, Yong, Woo, Junhyuk
• Application Number:
  US14/224,284
• Publication Number:
  US 20150064857A1
• Time in Patent Office: Days
• US Class Current: 438/158
• CPC Class Codes: G03F 1/26 Phase shift masks [PSM]; PSM blanks; Preparation thereof
• CPC Class Codes: G03F 1/32 Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion,; Preparation thereof
• CPC Class Codes: H01L 27/1288 employing particular masking sequences or specially adapted masks, e.g. half-tone mask

Abstract

A mask for etching a target layer includes a mask substrate. A phase inversion layer is disposed to correspond to a non-etched area of a pattern target layer. The phase inversion layer is configured to generate inverted light by inverting a phase of incident light and to transmit the inverted light to the non-etched area of a pattern target layer. An inversion offset part is disposed in a center part of the phase inversion layer. The inversion offset part is configured to generate offset light causing destructive interference with the inverted light in the non-etched area and to provide the offset light to the non-etched area.

Claims

1. A mask for etching a pattern target layer, comprising:

a mask substrate;

a phase inversion layer disposed to correspond to a non-etched area of a pattern target layer, wherein the phase inversion layer is configured to generate inverted light by inverting a phase of incident light and to transmit the inverted light to the non-etched area of the pattern target layer; and

an inversion offset part disposed in a center part of the phase inversion layer, wherein the inversion offset part is configured to generate offset light causing destructive interference with the inverted light in the non-etched area and to provide the offset light to the non-etched area.

2. The mask for exposure of claim 1, wherein the inversion offset part includes a slit disposed in the phase inversion layer, and the offset light has a non-inverted phase that is transmitted through the slit.

3. The mask for exposure of claim 1, wherein the inversion offset part includes a phase reinversion layer disposed on the phase inversion layer, and the offset light has a phase that is inverse to a phase of the inverted light that is transmitted through the phase inversion layer.

4. The mask for exposure of claim 3, wherein the phase reinversion layer includes a same material as the phase inversion layer and the phase reinversion layer has a same thickness as the phase inversion layer.

5. The mask for exposure of claim 1, wherein a width of the inversion offset part is in a range of about 0.1 μ

m to about 1 μ

m.

6. The mask for exposure of claim 1, wherein when a pitch is defined as a sum of a width of the etched area and a width of the non-etched area, the pitch is in a range of about 2 μ

m to about 20 μ

m.

7. The mask for exposure of claim 1, wherein a wavelength of the light transmitted to the mask substrate is in a range of about 300 nm to about 450 nm.

8. The mask for exposure of claim 1, wherein a plurality of inversion offset parts are disposed in the non-etched area.

9. A method of fabricating a mask for exposure for etching a pattern target layer, the method comprising:

providing a phase conversion material configured to shift a phase of light transmitted to a mask substrate;

forming a phase inversion layer on the mask substrate, wherein the phase inversion layer generates inverted light by inverting a phase of the transmitted light to provide the transmitted light to a non-etched area of a pattern target layer by etching the phase conversion material; and

forming an inversion offset part, wherein the inversion offset part generates offset light causing destructive interference with the inverted light in a center part of a non-etched area of the pattern target layer and provides the offset light to a center portion of the non-etched area.

10. The method of claim 9, wherein the forming of the phase inversion layer and the inversion offset part comprises forming a slit that generates the offset light having a non-inverted phase by etching the phase inversion layer on the center part of the non-etched area.

11. The method of claim 9, wherein the forming of the phase inversion layer and the inversion offset part comprises forming a phase reinversion layer that generates the offset light having a phase that is inverse to a phase of the inverted light on the center part of the non-etched area.

12. The method of claim 11, wherein the forming of the phase inversion layer and the inversion offset part comprises etching a portion of the phase conversion material.

15. The method of claim 11, wherein the inversion offset part includes a phase reinversion layer disposed on the phase inversion layer, and the offset light has a phase that is inverse to a phase of the inverted light that is transmitted through the phase inversion layer.

13. A method of fabricating a display panel, the method comprising:

forming a base substrate;

forming a thin film transistor on the base substrate;

forming a pixel electrode, electrically connected to the thin film transistor, on the base substrate; and

forming a micro pattern on the pixel electrode using a mask for exposure,

wherein an etched area and a non-etched area, which correspond to the micro pattern, are defined in the pixel electrode, and

the mask for exposure comprises;

a mask substrate;

a phase inversion layer disposed to correspond to the non-etched area, wherein the phase inversion layer is configured to generate inverted light by inverting a phase of incident light and to provide the inverted light to the non-etched area of the pattern target layer; and

an inversion offset part disposed in a center part of the phase inversion layer, wherein the inversion offset part is configured to offset light causing destructive interference with the inverted light in the non-etched area and to provide the offset light to the non-etched area.

14. The method of claim 13, wherein the inversion offset part includes a slit formed in the phase inversion layer, and the offset light has a non-inverted phase that is transmitted through the slit.

16. A mask for exposure, comprising:

a mask substrate;

a phase inversion layer disposed on the mask substrate, wherein the phase inversion layer is configured to generate inverted light by inverting a phase of incident light and providing the inverted light to the non-etched area of the pattern target layer; and

an inversion offset part disposed on the phase inversion layer, wherein the inversion offset part includes a first slit and a second slit separated from each other by a predetermined distance.

17. The mask for exposure of claim 16, wherein the first slit and the second slit are disposed in a center portion of the inversion offset part.

18. The mask for exposure of claim 16, further comprising openings disposed on opposite ends of the mask substrate.

19. The mask for exposure of claim 16, wherein the first slit and the second slit are disposed in a center portion of the inversion offset part, and openings are disposed on opposite ends of the mask substrate.

20. The mask for exposure of claim 16, wherein the first slit and the second slit are configured to face a center part of a non-etched area of a pattern target layer.