MASK FOR EXPOSURE, METHOD OF FABRICATING THE SAME, AND METHOD OF FABRICATING DISPLAY PANEL USING THE MASK
First Claim
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1. A mask for etching a pattern target layer, comprising:
- a mask substrate;
a phase inversion layer disposed to correspond to a non-etched area of a pattern target layer, wherein the phase inversion layer is configured to generate inverted light by inverting a phase of incident light and to transmit the inverted light to the non-etched area of the pattern target layer; and
an inversion offset part disposed in a center part of the phase inversion layer, wherein the inversion offset part is configured to generate offset light causing destructive interference with the inverted light in the non-etched area and to provide the offset light to the non-etched area.
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Abstract
A mask for etching a target layer includes a mask substrate. A phase inversion layer is disposed to correspond to a non-etched area of a pattern target layer. The phase inversion layer is configured to generate inverted light by inverting a phase of incident light and to transmit the inverted light to the non-etched area of a pattern target layer. An inversion offset part is disposed in a center part of the phase inversion layer. The inversion offset part is configured to generate offset light causing destructive interference with the inverted light in the non-etched area and to provide the offset light to the non-etched area.
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Citations
20 Claims
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1. A mask for etching a pattern target layer, comprising:
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a mask substrate; a phase inversion layer disposed to correspond to a non-etched area of a pattern target layer, wherein the phase inversion layer is configured to generate inverted light by inverting a phase of incident light and to transmit the inverted light to the non-etched area of the pattern target layer; and an inversion offset part disposed in a center part of the phase inversion layer, wherein the inversion offset part is configured to generate offset light causing destructive interference with the inverted light in the non-etched area and to provide the offset light to the non-etched area. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A method of fabricating a mask for exposure for etching a pattern target layer, the method comprising:
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providing a phase conversion material configured to shift a phase of light transmitted to a mask substrate; forming a phase inversion layer on the mask substrate, wherein the phase inversion layer generates inverted light by inverting a phase of the transmitted light to provide the transmitted light to a non-etched area of a pattern target layer by etching the phase conversion material; and forming an inversion offset part, wherein the inversion offset part generates offset light causing destructive interference with the inverted light in a center part of a non-etched area of the pattern target layer and provides the offset light to a center portion of the non-etched area. - View Dependent Claims (10, 11, 12, 15)
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13. A method of fabricating a display panel, the method comprising:
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forming a base substrate; forming a thin film transistor on the base substrate; forming a pixel electrode, electrically connected to the thin film transistor, on the base substrate; and forming a micro pattern on the pixel electrode using a mask for exposure, wherein an etched area and a non-etched area, which correspond to the micro pattern, are defined in the pixel electrode, and the mask for exposure comprises; a mask substrate; a phase inversion layer disposed to correspond to the non-etched area, wherein the phase inversion layer is configured to generate inverted light by inverting a phase of incident light and to provide the inverted light to the non-etched area of the pattern target layer; and an inversion offset part disposed in a center part of the phase inversion layer, wherein the inversion offset part is configured to offset light causing destructive interference with the inverted light in the non-etched area and to provide the offset light to the non-etched area. - View Dependent Claims (14)
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16. A mask for exposure, comprising:
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a mask substrate; a phase inversion layer disposed on the mask substrate, wherein the phase inversion layer is configured to generate inverted light by inverting a phase of incident light and providing the inverted light to the non-etched area of the pattern target layer; and an inversion offset part disposed on the phase inversion layer, wherein the inversion offset part includes a first slit and a second slit separated from each other by a predetermined distance. - View Dependent Claims (17, 18, 19, 20)
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Specification