METHOD AND SYSTEM FOR MANUFACTURING A SEMI-CONDUCTING BACKPLANE

• US 20150064883A1
• Filed: 09/05/2013
• Published: 03/05/2015
• Est. Priority Date: 09/05/2013
• Status: Active Grant

• Current Assignee: Diftek Lasers, Inc.
• Original Assignee: Diftek Lasers, Inc.
• Inventors: DYKAAR, Douglas R.
• Granted Patent: US 9,209,019 B2
• Time in Patent Office: Days
• US Class Current: 438/479
• CPC Class Codes: H01L 21/02422 Non-crystalline insulating materials, e.g. glass, polymers
• CPC Class Codes: H01L 21/56 Encapsulations, e.g. encapsulation layers, coatings
• CPC Class Codes: H01L 21/67011 Apparatus for manufacture or treatment processes H01L21/30, H01L21/46; for production or after-treatment of single crystals or homogeneous polycrystalline material C30B35/00
• CPC Class Codes: H01L 21/67092 Apparatus for mechanical treatment or grinding or cutting, see the relevant groups in subclasses B24B or B28D
• CPC Class Codes: H01L 21/84 the substrate being other than a semiconductor body, e.g. being an insulating body
• CPC Class Codes: H01L 23/28 Encapsulations, e.g. encapsulating layers, coatings, e.g. for protectionH01L23/552 takes precedence; insulating layers for contacts or interconnections H01L23/5329
• CPC Class Codes: H01L 24/11 Manufacturing methods for bumps on insulating substrates H01L21/4853
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/12042 LASER
• CPC Class Codes: H01L 2924/12044 OLED
• CPC Class Codes: H01L 2924/15788 Glasses, e.g. amorphous oxides, nitrides or fluorides

Abstract

Methods and systems to manufacture a semi-conducting backplane are described. According to one set of implementations, semi-conducting particles are positioned in a supporting material of the semi-conducting backplane utilizing perforations in the supporting material or perforations in a removable support member upon which the semi-conducting backplane is constructed. For example, semi-conducting particles are deposited in perforations on a supporting member such that a portion of the semi-conducting particles protrudes from the supporting member. Suction is applied to the semi-conducting particles to retain the semi-conducting particles in the perforations and a layer of encapsulant material is applied onto the supporting member to cover the protruding portion. The supporting member is then removed from the semi-conducting particles and the layer of encapsulant material, which together form an assembly of the semi-conducting particles and the layer of encapsulant material. The portion of the semi-conducting particles is then planarized.

Claims

1. A method for manufacturing a semi-conducting backplane comprising:

depositing semi-conducting particles in perforations of a supporting member such that a portion of the semi-conducting particles protrudes from the supporting member;

applying suction to another portion of the semi-conducting particles to retain the semi-conducting particles in the perforations;

applying a layer of encapsulant material onto the supporting member such that the portion of the semi-conducting particles is covered by the layer of encapsulant material;

removing the supporting member to reveal an assembly of the semi-conducting particles and the layer of encapsulant material; and

planarizing the other portion of the semi-conducting particles.

2. The method of claim 1, wherein the other portion lies in one of:

a plane parallel to the layer of encapsulant material and a plane co-planar with the layer of encapsulant material.

3. The method of claim 1, wherein planarizing comprises chemical-mechanical planarization (CMP).

4. The method of claim 1, wherein applying the layer of encapsulant material comprises at least one of:

spraying the encapsulant material onto the supporting member, pouring the encapsulant material onto the supporting member, spreading the encapsulant material onto the supporting member, rolling the encapsulant material onto the supporting member, pressing the encapsulant material onto the supporting member, electrostatically coating the supporting member with the encapsulant material and vacuum forming the layer of encapsulant material onto the supporting member.

5. The method of claim 1, wherein the layer of encapsulant material comprises at least one of:

a fluid, a powder and a sheet.

6. The method of claim 1, wherein the layer of encapsulant material comprises at least one of:

glass, plastic and optically curable cement.

7. The method of claim 1 further comprising:

prior to the removing, applying a layer of substrate material over the layer of encapsulant material.

8. The method of claim 7, wherein the assembly further includes the layer of substrate material.

9. The method of claim 7, wherein the layer of substrate material comprises at least one of:

glass, flex-glass and plastic.

10. The method of claim 1 further comprising:

removing the layer of encapsulant material after the planarizing.

11. A system for manufacturing a semi-conducting backplane comprising:

a supporting member having perforations therein sized to receive semi-conducting particles such that a portion of the semi-conducting particles protrudes from the supporting member;

a suction apparatus, operatively coupled to the supporting member, for applying suction to another portion of the semi-conducting particles to retain the semi-conducting particles in the perforations;

an applicator for applying a layer of encapsulant material onto the supporting member such that the portion of the semi-conducting particles is covered by the layer of encapsulant material; and

a planarizing apparatus for planarizing the other portion of the semi-conducting particles.

12. A method for manufacturing a semi-conducting backplane comprising:

providing a substrate having perforations under suction;

depositing semi-conducting particles in the perforations such that a portion of the semi-conducting particles protrudes from the substrate, the semi-conducting particles being retained in the perforations by the suction;

adhering the substrate to the semi-conducting particles to form an assembly of the substrate and the semi-conducting particles; and

planarizing the portion of the semi-conducting particles.

13. The method of claim 12, wherein the substrate is provided to a supporting member configured to apply the suction to the perforations.

14. The method of claim 12, wherein the planarized portion lies in one of:

a plane parallel to the substrate of the assembly and a plane co-planar with the substrate of the assembly.

15. The method of claim 12, wherein planarizing comprises chemical-mechanical planarization (CMP).

16. The method of claim 12, wherein adhering the substrate to the semi-conducting particles comprises at least one of:

applying an adhesive to the perforations;

applying an adhesive to the semi-conducting particles;

heating the substrate;

curing the substrate; and

fusing an oxide layer on the semi-conducting particles to the substrate.

17. The method of claim 13 further comprising:

removing the assembly from the supporting member.

18. The method of claim 13, wherein the supporting member comprises one of a planar member, a conveyor or a drum.

19. The method of claim 12, wherein the semi-conducting particles comprise silicon spheres.

20. The method of claim 12, wherein the substrate comprises at least one of:

glass, flex-glass and plastic.

21. The method of claim 12 further comprising:

removing the substrate after the planarizing.

22. A system for manufacturing a semi-conducting backplane comprising:

a supporting surface configured to provide suction to perforations of a substrate;

a depositing apparatus for depositing semi-conducting particles in the perforations under suction, the semi-conducting particles being retained in the perforations by the suction such that a portion of the semi-conducting particles protrudes from the substrate;

an apparatus for adhering the substrate to the semi-conducting particles to form an assembly of the substrate and the semi-conducting particles; and

a planarizing apparatus for planarizing the portion of the semi-conducting particles.