FILM FORMATION METHOD AND FILM FORMATION APPARATUS

• US 20150064931A1
• Filed: 08/20/2014
• Published: 03/05/2015
• Est. Priority Date: 09/02/2013
• Status: Active Grant

• Current Assignee: L'Air Liquide Societe Anonyme Pour L'Etude et L'Exploitation Des Procedes Georges Claude (L'Air Liquide SA), Tokyo Electron Limited
• Original Assignee: L'Air Liquide Societe Anonyme Pour L'Etude et L'Exploitation Des Procedes Georges Claude (L'Air Liquide SA), Tokyo Electron Limited
• Inventors: KUMAGAI, Yasunori, TARUTANI, Kohei, KAMEOKA, Takashi, YANAGITA, Tomoko, MATSUI, Ryohei
• Granted Patent: US 9,786,494 B2
• Time in Patent Office: Days
• US Class Current: 438/780
• CPC Class Codes: H01L 21/02118 carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC polymers per se C08G, photoresist per se G03F
• CPC Class Codes: H01L 21/02271 deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition H01L21/02266 takes precedence
• CPC Class Codes: H01L 21/02312 treatment by exposure to a gas or vapour

Abstract

Disclosed is a film formation method, including vaporizing a plurality of raw material monomers in respective corresponding vaporizers, supplying the plurality of raw material monomers into a film formation apparatus, causing vapor deposition polymerization of the plurality of raw material monomers in the film formation apparatus to form an organic film on a substrate, and removing an impurity contained in at least one raw material monomer among the plurality of raw material monomers before the vapor deposition polymerization.

Claims

1. A film formation method, comprising:

vaporizing a plurality of raw material monomers in respective corresponding vaporizers;

supplying the plurality of raw material monomers into a film formation apparatus;

causing vapor deposition polymerization of the plurality of raw material monomers in the film formation apparatus to form an organic film on a substrate; and

removing an impurity contained in at least one raw material monomer among the plurality of raw material monomers before the vapor deposition polymerization.

2. The film formation method as claimed in claim 1, wherein the removing an impurity includes volatilizing the impurity.

3. The film formation method as claimed in claim 2, wherein the volatilizing the impurity includes supplying an inert gas thereto under a reduced pressure.

4. The film formation method as claimed in claim 1, wherein the removing an impurity is conducted in the corresponding vaporizer filled with the raw material monomer containing the impurity.

5. The film formation method as claimed in claim 1, wherein the organic film is selected from the group consisting of a polyimide film, a polyurea film, a polyurethane film, and a polyazomethine film.

6. The film formation method as claimed in claim 5, wherein the organic film is a polyimide film, the plurality of raw material monomers are an acid dianhydride and a diamine, and the impurity is at least one of acetic acid and acetic anhydride contained in the acid dianhydride.

7. The film formation method as claimed in claim 6, wherein a concentration of the at least one of acetic acid and acetic anhydride in the acid dianhydride is 400 ppm or less.

8. The film formation method as claimed in claim 6, wherein the removing an impurity is conducted at a temperature of 120°

C. to 180°

C.

9. The film formation method as claimed in claim 1, further comprising:

arranging one tray or a plurality of trays at a predetermined interval in a vertical direction inside the respective corresponding vaporizers, the one tray or the plurality of trays being configured to mount the raw material monomers thereon.

10. A film formation apparatus, comprising:

a mounting part configured to mount a silicon wafer thereon;

a first vaporizer configured to mounting an acid dianhydride containing at least one of acetic acid and acetic anhydride thereon, vaporize the acid dianhydride and supply the acid dianhydride to the mounting part;

a second vaporizer configured to mount a diamine thereon, vaporize the diamine, and supply the diamine to the mounting part;

an inert gas supply part configured to supply an inert gas to the first vaporizer;

an exhaust gas part configured to exhaust a gas of the at least one of acetic acid and acetic anhydride contained in the acid dianhydride from an inside of the first vaporizer; and

a control part configured to control operations of the first vaporizer, the second vaporizer, the inert gas supply part, and the exhaust gas part to form a polyimide film on the silicon wafer through vapor deposition polymerization of the acid dianhydride and the diamine.

11. The film formation apparatus as claimed in claim 10, wherein the acid dianhydride contains aluminum, boron, calcium, cadmium, cobalt, chromium, copper, iron, potassium, lithium, magnesium, manganese, sodium, nickel, lead, antimony, titanium, vanadium, and zinc at concentrations of 100 ppb or less.

12. The film formation apparatus as claimed in claim 10, wherein the control part controls the inert gas supply part and the exhaust gas part to remove the at least one of acetic acid and acetic anhydride in the acid dianhydride in such a manner that a concentration of the at least one of acetic acid and acetic anhydride is 400 ppm or less.

13. The film formation apparatus as claimed in claim 10, wherein the acid dianhydride is pyromellitic dianhydride and the diamine is 4,4′

-oxydianiline.

14. The film formation apparatus as claimed in claim 10, wherein a temperature of the first vaporizer at a time of removal of the at least one of acetic acid and acetic anhydride is in a range of 120°

C. to 180°

C.

15. The film formation apparatus as claimed in claim 10, wherein a flow rate of the inert gas at a time of removal of the at least one of acetic acid and acetic anhydride is in a range of 8.33×

10<sup>−

7</sup> m³/s to 8.33×

10<sup>−

6</sup> m³/s.

16. The film formation apparatus as claimed in claim 10, wherein a pressure of the inside of the first vaporizer at a time of removal of the at least one of acetic acid and acetic anhydride is in a range of 1.33×

10⁴ Pa to 2.66×

10⁴ Pa.

17. The film formation apparatus as claimed in claim 10, further comprising:

one tray or a plurality of trays arranged at a predetermined interval in a vertical direction inside the first vaporizer, the one tray or the plurality of trays being configured to mount the acid dianhydride.

18. The film formation apparatus as claimed in claim 10, wherein the mounting part includes a boat configured to hold a plurality of the silicon wafers horizontally at a predetermined interval in upper and lower directions.