SEMICONDUCTOR DEVICE WITH REDUCED ELECTRICAL RESISTANCE AND CAPACITANCE
First Claim
1. A semiconductor device comprising:
- a first type region comprising a first conductivity type;
a second type region comprising a second conductivity type;
a channel region extending between the first type region and the second type region, the channel region separated a first distance from a first portion of the first type region; and
a gate region surrounding the channel region, a first portion of the gate region separated a second distance from the first portion of the first type region, wherein the second distance is greater than the first distance.
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Abstract
A semiconductor device includes a first type region including a first conductivity type. The semiconductor device includes a second type region including a second conductivity type. The semiconductor device includes a channel region extending between the first type region and the second type region. The channel region is separated a first distance from a first portion of the first type region. The semiconductor device includes a gate region surrounding the channel region. A first portion of the gate region is separated a second distance from the first portion of the first type region. The second distance is greater than the first distance.
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Citations
20 Claims
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1. A semiconductor device comprising:
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a first type region comprising a first conductivity type; a second type region comprising a second conductivity type; a channel region extending between the first type region and the second type region, the channel region separated a first distance from a first portion of the first type region; and a gate region surrounding the channel region, a first portion of the gate region separated a second distance from the first portion of the first type region, wherein the second distance is greater than the first distance. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A semiconductor device comprising:
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a first type region comprising a first conductivity type; a second type region comprising a second conductivity type; a channel region extending between the first type region and the second type region, the channel region separated a first distance from a first portion of the first type region; and a gate region surrounding the channel region, a first portion of the gate region separated a second distance from the first portion of the first type region, wherein the second distance is greater than the first distance; and a first portion of a first insulator layer surrounding a second drift region below the channel region and extending between the first portion of the first type region and a second portion of the gate region. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17)
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18. A method of forming a semiconductor device, the method comprising:
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forming a first type region comprising a first conductivity type; forming a second type region comprising a second conductivity type; forming a channel region extending between the first type region and the second type region, the channel region separated a first distance from a first portion of the first type region; and forming a gate region surrounding the channel region, a first portion of the gate region separated a second distance from the first portion of the first type region, wherein the second distance is greater than the first distance. - View Dependent Claims (19, 20)
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Specification