×

NOVEL SEMICONDUCTOR DEVICE AND STRUCTURE

  • US 20150069523A1
  • Filed: 11/14/2014
  • Published: 03/12/2015
  • Est. Priority Date: 12/22/2012
  • Status: Active Grant
First Claim
Patent Images

1. An Integrated Circuit device, comprising:

  • a base wafer comprising single crystal, said base wafer comprising a plurality of first transistors;

    at least one metal layer providing interconnection between said plurality of first transistors;

    a second layer of less than 2 micron thickness, said second layer comprising a plurality of second single crystal transistors, said second layer overlying said at least one metal layer; and

    at least one conductive structure underneath at least one of said second single crystal transistors, said at least one conductive structure is constructed to provide a back-bias to at least one of said second single crystal transistors.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×