×

MAGNETIC MEMORY DEVICE

  • US 20150069546A1
  • Filed: 02/11/2014
  • Published: 03/12/2015
  • Est. Priority Date: 09/09/2013
  • Status: Active Grant
First Claim
Patent Images

1. A magnetic memory device comprising:

  • a semiconductor substrate;

    a memory cell array area on the semiconductor substrate, the memory cell array area including magnetoresistive elements, each of the magnetoresistive elements having a reference layer with an invariable magnetization, a storage layer with a variable magnetization, and a tunnel barrier layer therebetween;

    a magnetic field generating area which generates a first magnetic field cancelling a second magnetic field applying from the reference layer to the storage layer, and which is separated from the magnetoresistive elements; and

    a closed magnetic path area functioning as a closed magnetic path of the first magnetic field, and surrounding the memory cell array area and the magnetic field generating area.

View all claims
  • 5 Assignments
Timeline View
Assignment View
    ×
    ×