FIELD EFFECT TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME
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Accused Products
Abstract
Provided is a novel structure of a field effect transistor using a metal-semiconductor junction. The field effect transistor includes a wiring which is provided over a substrate and also functions as a gate electrode; an insulating film which is provided over the wiring, has substantially the same shape as the wiring, and also functions as a gate insulating film; a semiconductor layer which is provided over the insulating film and includes an oxide semiconductor and the like; an oxide insulating layer which is provided over the semiconductor layer and whose thickness is 5 times or more as large as the sum of the thickness of the insulating film and the thickness of the semiconductor layer or 100 nm or more; and wirings which are connected to the semiconductor layer through openings provided in the oxide insulating layer.
15 Citations
15 Claims
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1. (canceled)
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2. A method for manufacturing an electronic device, comprising steps of:
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forming a first conductive film over a substrate; forming a first insulating film over the first conductive film; etching the first insulating film and the first conductive film to form a first insulating layer and a first conductive layer so that the first conductive layer has substantially the same shape as the first insulating layer; forming a semiconductor layer over and in contact with the first insulating layer so that the semiconductor layer does not overlap with any side edge of the first conductive layer; forming a second insulating layer over the semiconductor layer; providing an opening reaching the semiconductor layer in the second insulating layer; and forming a second conductive layer covering the opening. - View Dependent Claims (3, 4, 5, 6, 7, 8)
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9. A method for manufacturing an electronic device, comprising steps of:
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forming a first conductive film over a substrate; forming a first insulating film over the first conductive film; forming a semiconductor film over the first insulating film; etching the semiconductor film, the first insulating film and the first conductive film to form a semiconductor layer, a first insulating layer and a first conductive layer so that the first conductive layer has substantially the same shape as the first insulating layer; forming a second insulating layer over the semiconductor layer; providing an opening reaching the semiconductor layer in the second insulating layer; and forming a second conductive layer covering the opening. - View Dependent Claims (10, 11, 12, 13, 14, 15)
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Specification