Metal and Via Definition Scheme
First Claim
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1. A method, comprising:
- defining a photoresist layer over a first dielectric layer, wherein the first dielectric layer is disposed over an etch stop layer and the etch stop layer is disposed over a second dielectric layer;
forming a spacer layer over the photoresist and the first dielectric layer, wherein the spacer layer has a first opening that has a via width and the first opening is disposed directly above a via location;
forming a metal trench with a metal width in the first dielectric layer, wherein the metal width at the via location is greater than the via width; and
forming a via hole with the via width at the via location in the second dielectric layer.
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Abstract
A method includes defining a photoresist layer over a first dielectric layer. The first dielectric layer is disposed over an etch stop layer and the etch stop layer is disposed over a second dielectric layer. A spacer layer is formed over the photoresist and the first dielectric layer. The spacer layer has an opening that has a via width. The opening is disposed directly above a via location. A metal trench with a metal width is formed in the first dielectric layer. The metal width at the via location is greater than the via width. A via hole with the via width is formed at the via location in the second dielectric layer.
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Citations
20 Claims
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1. A method, comprising:
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defining a photoresist layer over a first dielectric layer, wherein the first dielectric layer is disposed over an etch stop layer and the etch stop layer is disposed over a second dielectric layer; forming a spacer layer over the photoresist and the first dielectric layer, wherein the spacer layer has a first opening that has a via width and the first opening is disposed directly above a via location; forming a metal trench with a metal width in the first dielectric layer, wherein the metal width at the via location is greater than the via width; and forming a via hole with the via width at the via location in the second dielectric layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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15. A method, comprising:
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defining a photoresist layer over a first dielectric layer, wherein the first dielectric layer is disposed over an etch stop layer and the etch stop layer is disposed over a second dielectric layer; depositing a spacer layer over the photoresist layer and the first dielectric layer; and etching the spacer layer to form a first opening with a via width wherein the first opening is disposed directly above a via location; etching the first dielectric layer to form a second opening with a width matching the via width at the via location; forming a metal trench with a metal width in the first dielectric layer, wherein the metal width at the via location is greater than the via width; and forming a via hole with the via width at the via location in the second dielectric layer. - View Dependent Claims (16, 17, 18, 19)
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20. A method, comprising:
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defining a photoresist layer over a first dielectric layer, wherein the first dielectric layer is disposed over an etch stop layer, the etch stop layer is disposed over a second dielectric layer, and the first dielectric layer and the second dielectric layer comprise low-k dielectric material or SiO2; forming a spacer layer over the photoresist and the first dielectric layer, wherein the spacer layer has a first opening that has a via width, the first opening is disposed directly above a via location, and the spacer layer comprises SiN; etching the first dielectric layer to form a second opening with a width matching the via width at the via location; removing the spacer layer after etching the first dielectric layer; forming a metal trench with a metal width in the first dielectric layer, wherein the metal width at the via location is greater than the via width; forming a via hole with the via width at the via location in the second dielectric layer; and removing the photoresist layer.
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Specification