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METHODS FOR ETCHING MATERIALS USING SYNCHRONIZED RF PULSES

  • US 20150072530A1
  • Filed: 09/06/2013
  • Published: 03/12/2015
  • Est. Priority Date: 09/06/2013
  • Status: Active Grant
First Claim
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1. A method of etching a material layer disposed on a substrate using synchronized RF pulses comprising:

  • providing a gas mixture into a processing chamber having a substrate disposed therein;

    applying a first RF source power at a first time point to the processing chamber to form a plasma in the gas mixture;

    applying a first RF bias power at a second time point to the processing chamber to perform an etching process on the substrate;

    turning off the first RF bias power at a third time point applied to the processing chamber while continuously maintaining the first RF source power on from the first time point through the second and the third time points; and

    turning off the first RF source power at a fourth time point applied to the processing chamber while continuously providing the gas mixture to the processing chamber from the first time point through the second, third and fourth time points.

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