METHODS FOR ETCHING MATERIALS USING SYNCHRONIZED RF PULSES
First Claim
1. A method of etching a material layer disposed on a substrate using synchronized RF pulses comprising:
- providing a gas mixture into a processing chamber having a substrate disposed therein;
applying a first RF source power at a first time point to the processing chamber to form a plasma in the gas mixture;
applying a first RF bias power at a second time point to the processing chamber to perform an etching process on the substrate;
turning off the first RF bias power at a third time point applied to the processing chamber while continuously maintaining the first RF source power on from the first time point through the second and the third time points; and
turning off the first RF source power at a fourth time point applied to the processing chamber while continuously providing the gas mixture to the processing chamber from the first time point through the second, third and fourth time points.
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Abstract
Embodiments of the present invention provide methods for etching a material layer using synchronized RF pulses. In one embodiment, a method includes providing a gas mixture into a processing chamber, applying a first RF source power at a first time point to the processing chamber to form a plasma in the gas mixture, applying a first RF bias power at a second time point to the processing chamber to perform an etching process on the substrate, turning off the first RF bias power at a third time point while continuously maintaining the first RF source power on from the first time point through the second and the third time points, and turning off the first RF source power at a fourth time point while continuously providing the gas mixture to the processing chamber from the first time point through the second, third and fourth time points.
23 Citations
20 Claims
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1. A method of etching a material layer disposed on a substrate using synchronized RF pulses comprising:
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providing a gas mixture into a processing chamber having a substrate disposed therein; applying a first RF source power at a first time point to the processing chamber to form a plasma in the gas mixture; applying a first RF bias power at a second time point to the processing chamber to perform an etching process on the substrate; turning off the first RF bias power at a third time point applied to the processing chamber while continuously maintaining the first RF source power on from the first time point through the second and the third time points; and turning off the first RF source power at a fourth time point applied to the processing chamber while continuously providing the gas mixture to the processing chamber from the first time point through the second, third and fourth time points. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
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17. A method for etching a material layer disposed on a substrate comprising:
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performing a pre-coating process on a substrate by supplying a gas mixture into a processing chamber and forming a plasma from the gas mixture by applying a first RF source power in the gas mixture; performing an etching process on the substrate by supplying a first RF bias power into the processing chamber while continuously applying the first RF source power in the processing chamber; and performing a post-coating process on the substrate by turning off the first RF bias power applied into the processing chamber while continuously applying the first RF source power in the processing chamber. - View Dependent Claims (18, 19, 20)
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Specification