METHOD AND APPARATUS FOR REMOTE PLASMA TREATMENT FOR REDUCING METAL OXIDES ON A METAL SEED LAYER

• US 20150072538A1
• Filed: 09/06/2013
• Published: 03/12/2015
• Est. Priority Date: 09/06/2013
• Status: Abandoned Application

• Current Assignee: Lam Research Corporation
• Original Assignee: Lam Research Corporation
• Inventors: Spurlin, Tighe A., Duncan, James E., Lau, Stephen, Stowell, Marshall, Reid, Jonathan D., Porter, David
• Application Number:
  US14/020,339
• Publication Number:
  US 20150072538A1
• Time in Patent Office: Days
• US Class Current: 438/798
• CPC Class Codes: C25D 17/00 Constructional parts, or assemblies thereof, of cells for electrolytic coating
• CPC Class Codes: C25D 5/34 Pretreatment of metallic surfaces to be electroplated
• CPC Class Codes: C25D 7/123 Semiconductors first coated with a seed layer or a conductive layer
• CPC Class Codes: H01L 21/02068 during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
• CPC Class Codes: H01L 21/321 After treatment
• CPC Class Codes: H01L 21/67207 comprising a chamber adapted to a particular process
• CPC Class Codes: H01L 21/76861 Post-treatment or after-treatment not introducing additional chemical elements into the layer
• CPC Class Codes: H01L 21/76873 for electroplating

Abstract

Method and apparatus for reducing metal oxide surfaces to modified metal surfaces are disclosed. By exposing a metal oxide surface to a remote plasma, the metal oxide surface on a substrate is reduced. A remote plasma apparatus can treat the metal oxide surface as well as cool, load/unload, and move the substrate within a single standalone apparatus. The remote plasma apparatus includes a processing chamber and a controller configured to provide a substrate having a metal seed layer in a processing chamber, move the substrate towards a substrate support in the processing chamber, form a remote plasma of a reducing gas species, expose a metal seed layer of the substrate to the remote plasma, and expose the substrate to a cooling gas. In some embodiments, the remote plasma apparatus is part of an electroplating apparatus.

Claims

1. A remote plasma apparatus for treating a substrate with a metal seed layer, the remote plasma apparatus comprising:

a processing chamber;

a substrate support for holding the substrate in the processing chamber;

a remote plasma source over the substrate support;

a showerhead between the remote plasma source and the substrate support;

one or more movable members in the processing chamber configured to move the substrate to positions between the showerhead and the substrate support; and

a controller with instructions for performing the following operations;

(a) providing the substrate in the processing chamber;

(b) moving the substrate towards the substrate support via the one or more movable members;

(c) forming a remote plasma of a reducing gas species in the remote plasma source, wherein the remote plasma comprises radicals of the reducing gas species;

(d) exposing the metal seed layer of the substrate to the radicals of the reducing gas species; and

(e) exposing the substrate to a cooling gas.

2. The remote plasma apparatus of claim 1, wherein the controller further comprises instructions for moving the substrate towards the showerhead via the one or more movable members before exposing the substrate to a cooling gas.

3. The remote plasma apparatus of claim 1, further comprising cooling gas inlets for delivering the cooling gas into the processing chamber.

4. The remote plasma apparatus of claim 1, wherein the cooling gas includes at least one of argon, helium, and nitrogen.

5. The remote plasma apparatus of claim 1, wherein the controller further comprises instructions for heating the substrate support to a processing temperature during operations (c) to (d), wherein the processing temperature is between about 15°

C. and about 400°

C.

6. The remote plasma apparatus of claim 1, wherein the controller further comprises instructions for maintaining the temperature of the showerhead below about 30°

C.

7. The remote plasma apparatus of claim 1, wherein the substrate support is configured to move between a first position and a second position in the processing chamber, wherein a distance between the first position and the second position is greater than about 1 inch.

8. The remote plasma apparatus of claim 1, wherein the controller further comprises instructions for transferring the substrate to an electroplating apparatus after exposing the substrate to the cooling gas.

9. The remote plasma apparatus of claim 1, wherein the remote plasma apparatus is part of an electroplating apparatus.

10. The remote plasma apparatus of claim 1, wherein exposing the substrate to the cooling gas comprises cooling the substrate to a temperature below about 30°

C.

11. The remote plasma apparatus of claim 1, wherein the one or more movable members are configured to move the substrate between an actuated position and an unactuated position, wherein the distance between the showerhead and the substrate in the actuated position is between about 0.05 inches and about 0.75 inches, and wherein the distance between the showerhead and the substrate in the unactuated position is between about 1 inch and about 5 inches.

12. The remote plasma apparatus of claim 1, wherein the metal seed layer includes at least one of copper, cobalt, ruthenium, palladium, rhodium, iridium, osmium, nickel, gold, silver, aluminum, and tungsten.

13. The remote plasma apparatus of claim 1, wherein moving the substrate to an unactuated position comprises retracting the one or more movable members so that the substrate rests on the substrate support.

14. A method of treating a substrate with a metal seed layer, the method comprising:

providing the substrate in a processing chamber;

moving the substrate towards a substrate support in the processing chamber;

forming a remote plasma of a reducing gas species in a remote plasma source, wherein the remote plasma comprises radicals of the reducing gas species;

exposing the metal seed layer of the substrate to the radicals of the reducing gas species; and

exposing the substrate to a cooling gas.

15. The method of claim 14, further comprising heating a substrate support to a processing temperature, wherein the processing temperature is between about 15°

C. and about 400°

C.

16. The method of claim 14, further comprising adjusting a temperature of the substrate, wherein adjusting the temperature of the substrate is configured by positioning the substrate via one or more movable members between a showerhead and the substrate support, the showerhead and the substrate support each being held at a constant temperature when positioning the substrate.

17. The method of claim 16, further comprising moving the substrate towards the showerhead via the one or more movable members before exposing the substrate to a cooling gas.

18. The method of claim 16, further comprising maintaining a temperature of the showerhead below about 30°

C.

19. The method of claim 14, further comprising transferring the substrate to an electroplating apparatus.

20. The method of claim 14, further comprising moving the substrate support from a first position to a second position in the processing chamber, wherein a distance between the first position and the second position is greater than about 1 inch.