LIGHT-EMITTING DIODES

• US 20150076445A1
• Filed: 03/12/2014
• Published: 03/19/2015
• Est. Priority Date: 09/17/2013
• Status: Active Grant

• Current Assignee: Lextar Electronics Corporation (Ennostar, Inc.)
• Original Assignee: Lextar Electronics Corporation (Ennostar, Inc.)
• Inventors: TSOU, Po-Hung
• Granted Patent: US 9,397,263 B2
• Time in Patent Office: Days
• US Class Current: 257/13
• CPC Class Codes: H01L 2933/0016 relating to electrodes
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/385 the electrode extending at least partially onto a side surface of the semiconductor body
• CPC Class Codes: H01L 33/42 Transparent materials

Abstract

A light-emitting diode is provided. The light-emitting diode includes an N-type semiconductor layer, a light-emitting layer and a P-type semiconductor layer. A P-type electrode includes a body part and an extension part, wherein the body part is disposed on a corner of an upper surface of the P-type semiconductor layer and the extension part extends from the body part onto the N-type semiconductor layer along a sidewall of the P-type semiconductor layer adjacent to the N-type semiconductor layer. An N-type electrode is disposed on the N-type semiconductor layer. Moreover, a current blocking layer is disposed under the P-type electrode. A transparent conductive layer is disposed on a partial upper surface of the P-type semiconductor layer.

Claims

1. A light-emitting diode, comprising:

an N-type semiconductor layer;

a light-emitting layer disposed on a portion of the N-type semiconductor layer to expose another portion of the N-type semiconductor layer;

a P-type semiconductor layer disposed on the light-emitting layer;

a P-type electrode including a first body part and a first extension part, wherein the first body part is disposed on a corner of an upper surface of the P-type semiconductor layer and the first extension part extends from the first body part onto the exposed portion of the N-type semiconductor layer along a sidewall of the P-type semiconductor layer adjacent to the exposed portion of the N-type semiconductor layer;

an N-type electrode disposed on the exposed portion of the N-type semiconductor layer;

a current blocking layer disposed on a part of the P-type semiconductor layer under the P-type electrode and on a part of N-type semiconductor layer under the P-type electrode; and

a transparent conductive layer disposed on a partial upper surface of the P-type semiconductor layer, and a part of the transparent conductive layer disposed between the current blocking layer and the P-type electrode.

2. The light-emitting diode as claimed in claim 1, wherein the first extension part of the P-type electrode is not disposed over an area of the N-type semiconductor layer overlapping with the P-type semiconductor layer.

3. The light-emitting diode as claimed in claim 1, wherein the sidewall of the P-type semiconductor layer adjacent to the exposed portion of the N-type semiconductor layer is slanted.

4. The light-emitting diode as claimed in claim 3, wherein the first extension part of the P-type electrode is not disposed over an area of the N-type semiconductor layer overlapping with the P-type semiconductor layer.

5. The light-emitting diode as claimed in claim 3, wherein the N-type semiconductor layer has a shape of a rectangle, a first side of the rectangle is longer than a second side of the rectangle, and the first extension part of the P-type electrode is extending along the direction of the first side.

6. The light-emitting diode as claimed in claim 5, wherein the first extension part of the P-type electrode is not disposed over an area of the N-type semiconductor layer overlapping with the P-type semiconductor layer.

7. The light-emitting diode as claimed in claim 5, wherein the N-type electrode includes a second body part and a second extension part, and the second extension part of the N-type electrode and the first extension part of the P-type electrode are parallel to each other.

8. The light-emitting diode as claimed in claim 7, wherein the first extension part of the P-type electrode is not disposed over an area of the N-type semiconductor layer overlapping with the P-type semiconductor layer.

9. The light-emitting diode as claimed in claim 7, wherein the upper surface of the P-type semiconductor layer is defined into a first area, a second area and a third area, the first area corresponds to the first body part of the P-type electrode, the second area corresponds to the first extension part of the P-type electrode and the second extension part of the N-type electrode, and the third area corresponds to the second body part of the N-type electrode

10. The light-emitting diode as claimed in claim 9, wherein the first extension part of the P-type electrode is not disposed over an area of the N-type semiconductor layer overlapping with the P-type semiconductor layer.

11. The light-emitting diode as claimed in claim 1, further comprising a substrate, wherein the N-type semiconductor layer is disposed on the substrate.

12. The light-emitting diode as claimed in claim 11, wherein the N-type semiconductor layer is a nitride containing gallium.

13. The light-emitting diode as claimed in claim 11, wherein the P-type semiconductor layer is a nitride containing gallium.

14. The light-emitting diode as claimed in claim 11, wherein the light-emitting layer is a semiconductor layer with a multiple quantum well structure.