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Group III Nitride Semiconductor Light-Emitting Device

  • US 20150076547A1
  • Filed: 08/13/2014
  • Published: 03/19/2015
  • Est. Priority Date: 09/17/2013
  • Status: Abandoned Application
First Claim
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1. A Group III nitride semiconductor light-emitting device having a transparent electrode, an insulating film, and a p-electrode located in this order on a p-type layer formed of Group III nitride semiconductor, the transparent electrode being electrically connected to the p-electrode via a hole provided in the insulating film, whereinthe p-electrode comprises a connecting portion being electrically connected to the outside of the device, a wiring portion extending in a wiring pattern from the connecting portion, and a contact portion being connected to the wiring portion and being in contact with the transparent electrode via the hole;

  • a current blocking layer made of an insulating and transparent material with a refractive index lower than that of the p-type layer is formed between the p-type layer and the transparent electrode;

    the current blocking layer is provided in a region including an orthogonal projection of the contact portion in plan view, and is not provided in a region overlapping with the wiring portion; and

    the current blocking layer is larger by 0 μ

    m to 9 μ

    m in width than the contact portion.

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