POWER DEVICES, STRUCTURES, COMPONENTS, AND METHODS USING LATERAL DRIFT, FIXED NET CHARGE, AND SHIELD
1 Assignment
0 Petitions
Accused Products
Abstract
Lateral power devices where immobile electrostatic charge is emplaced in dielectric material adjoining the drift region. A shield gate is interposed between the gate electrode and the drain, to reduce the Miller charge. In some embodiments the gate electrode is a trench gate, and in such cases the shield electrode too is preferably vertically extended.
8 Citations
44 Claims
-
1-23. -23. (canceled)
-
24. A semiconductor device comprising:
-
a first-conductivity-type source region; a second-conductivity-type body region interposed between said source region and a semiconductor drift region; a gate electrode which is capacitively coupled to controllably invert a portion of said body region, to controllably form therein a channel which connects said source region to said drift region; wherein said drift region is laterally interposed between said body region and a first-conductivity-type drain region; permanent charge, which is embedded in at least one insulating region which adjoins said drift region, and which has a polarity which tends to deplete a layer of said drift region in proximity to said insulating region; a shield electrode, which is at least partly interposed between said gate electrode and said drain to reduce capacitive coupling between said gate and said drain; and a dielectric-filled trench within said drift region, which lies at least partly beneath said gate electrode; wherein said drift region is formed as a well. - View Dependent Claims (25, 26, 27, 28, 29, 30, 31, 32, 33)
-
-
34. A semiconductor device comprising:
-
a first-conductivity-type source region; a second-conductivity-type body region interposed between said source region and a semiconductor drift region of said second conductivity type; a gate electrode which is capacitively coupled to controllably invert a portion of said body region, to controllably form therein a channel which connects said source region to said drift region;
wherein said semiconductor drift region is laterally interposed between said body region and a first-conductivity-type drain region; andan insulated trench which laterally adjoins said drift region, and which contains immobile net electrostatic charge which is capacitively coupled to said drift region, and which is laterally tapered. - View Dependent Claims (35, 36, 37, 38, 39)
-
-
40. A method of operating a semiconductor device, comprising:
-
in the ON state, applying a voltage to an insulated gate to thereby invert a portion of a second-conductivity-type body region interposed between a first-conductivity-type region and a second-conductivity-type drift region, and thereby allow passage of majority carriers from said source region through said channel, and through a portion of said drift region which has been inverted by immobile permanent net electrostatic charge, to a first-conductivity-type drain region; and in the OFF state, at least partially balancing the space charge of depleted portions of said drift region with said net electrostatic charge; and
reducing capacitive coupling by a shield electrode which is interposedbetween said gate electrode and said drain. - View Dependent Claims (41, 42, 43)
-
-
44-46. -46. (canceled)
Specification