COOLING PLATE, METHOD FOR MANUFACTURING THE SAME, AND MEMBER FOR SEMICONDUCTOR MANUFACTURING APPARATUS

• US 20150077895A1
• Filed: 10/16/2014
• Published: 03/19/2015
• Est. Priority Date: 03/15/2013
• Status: Active Grant

• Current Assignee: NGK Insulators Limited
• Original Assignee: NGK Insulators Limited
• Inventors: JINDO, Asumi, INOUE, Katsuhiro, KATSUDA, Yuji, KATAIGI, Takashi, AMANO, Shingo, SUGIMOTO, Hiroya
• Granted Patent: US 9,255,747 B2
• Time in Patent Office: Days
• US Class Current: 361/234
• CPC Class Codes: B23K 1/0008 specially adapted for particular articles or work
• CPC Class Codes: B23K 1/19 taking account of the properties of the materials to be soldered
• CPC Class Codes: C04B 2235/3839 Refractory metal carbides
• CPC Class Codes: C04B 2235/3843 Titanium carbides
• CPC Class Codes: C04B 2235/3891 Silicides, e.g. molybdenum disilicide, iron silicide
• CPC Class Codes: C04B 2235/404 Refractory metals
• CPC Class Codes: C04B 2235/428 Silicon
• CPC Class Codes: C04B 2235/5436 micrometer sized, i.e. from 1 to 100 micron
• CPC Class Codes: C04B 2235/72 Products characterised by the absence or the low content of specific components, e.g. alkali metal free alumina ceramics
• CPC Class Codes: C04B 2235/77 Density
• CPC Class Codes: C04B 2235/96 Properties of ceramic products, e.g. mechanical properties such as strength, toughness, wear resistance
• CPC Class Codes: C04B 2235/9607 Thermal properties, e.g. thermal expansion coefficient
• CPC Class Codes: C04B 35/5611 based on titanium carbides
• CPC Class Codes: C04B 35/5615 based on titanium silicon carbides
• CPC Class Codes: C04B 35/565 based on silicon carbide
• CPC Class Codes: C04B 35/58092 based on refractory metal silicides
• CPC Class Codes: C04B 35/645 Pressure sintering
• CPC Class Codes: C04B 37/006 consisting of metals or metal salts
• CPC Class Codes: F28F 21/086 from titanium or titanium alloys
• CPC Class Codes: F28F 3/12 Elements constructed in the shape of a hollow panel, e.g. with channels F28D1/02, F28D1/03 take precedence
• CPC Class Codes: H01L 21/6833 : Details of electrostatic chucks
• CPC Class Codes: Y10T 428/249969 : Of silicon-containing material [e.g., glass, etc.]

Abstract

A member 10 for a semiconductor manufacturing apparatus includes an alumina electrostatic chuck 20, a cooling plate 30, and a cooling plate-chuck bonding layer 40. The cooling plate 30 includes first to third substrates 31 to 33, a first metal bonding layer 34 between the first and second substrates 31 and 32, a second metal bonding layer 35 between the second and third substrates 32 and 33, and a refrigerant path 36. The first to third substrates 31 to 33 are formed of a dense composite material containing Si, SiC, and Ti. The metal bonding layers 34 and 35 are formed by thermal compression bonding of the substrates 31 to 33 with an Al—Si—Mg or Al—Mg metal bonding material interposed between the first and second substrates 31 and 32 and between the second and third substrates 32 and 33.

Claims

1. A cooling plate having an internal refrigerant path and used for cooling an alumina ceramic member, including:

a first substrate formed of a dense composite material, the dense composite material containing silicon carbide particles, titanium silicide, titanium silicon carbide, and titanium carbide, the silicon carbide particle content being in the range of 37 to 60 mass %, each of the amounts of titanium silicide, titanium silicon carbide, and titanium carbide being lower than the mass percentage of the silicon carbide particles, the percentage of open pores of the dense composite material being 1% or less,

a second substrate formed of the dense composite material and having a punched portion, the punched portion having the same shape as the refrigerant path,

a third substrate formed of the dense composite material,

a first metal bonding layer between the first substrate and the second substrate formed by thermal compression bonding of the first substrate and the second substrate with a metal bonding material interposed therebetween, and

a second metal bonding layer between the second substrate and the third substrate formed by thermal compression bonding of the second substrate and the third substrate with a metal bonding material interposed therebetween.

3. The cooling plate according to claim 1, wherein the metal bonding layer contains as the metal bonding material an aluminum alloy bonding material containing Mg or Si and Mg and is formed by thermal compression bonding at a temperature lower than or equal to the solidus temperature of the bonding material.

4. The cooling plate according to claim 1, wherein the mass percentage of the titanium carbide in the dense composite material is lower than the mass percentage of the titanium silicide and the mass percentage of the titanium silicon carbide in the dense composite material.

5. The cooling plate according to claim 1, wherein the mass percentage of the titanium silicide in the dense composite material is higher than the mass percentage of the titanium silicon carbide.

6. The cooling plate according to claim 1, wherein in the dense composite material, at least one of the titanium silicide, the titanium silicon carbide, and the titanium carbide is disposed between the silicon carbide particles and covers the surface of the silicon carbide particles.

7. The cooling plate according to claim 1, wherein in the dense composite material, the titanium carbide is dispersed in the titanium silicide.

8. The cooling plate according to claim 1, wherein the titanium silicide is TiSi₂.

9. The cooling plate according to claim 1, wherein the difference in average linear thermal expansion coefficient between the dense composite material and alumina is 0.5 ppm/K or less at a temperature in the range of 40°

C. to 570°

C.

10. The cooling plate according to claim 1, wherein the dense composite material has an average linear thermal expansion coefficient in the range of 7.2 to 8.2 ppm/K at a temperature in the range of 40°

C. to 570°

C.

11. The cooling plate according to claim 1, wherein the dense composite material has a thermal conductivity of 75 W/mK or more.

12. The cooling plate according to claim 1, wherein the dense composite material has a four-point bending strength of 200 MPa or more.

13. The cooling plate according to claim 1, wherein in the dense composite material, the number of silicon carbide particles 10 μ

m or more in length along the major axis in a SEM image (backscattered electron image) of a region 90 μ

m in length and 120 μ

m in width magnified 1000 times is 16 or more.

17. A member for a semiconductor manufacturing apparatus comprising:

an alumina electrostatic chuck including an electrostatic electrode and a heater electrode,

a cooling plate according to claim 1, and

a cooling plate-chuck bonding layer formed by thermal compression bonding of the first substrate of the cooling plate and the electrostatic chuck with a metal bonding material interposed between a surface of the first substrate of the cooling plate and the electrostatic chuck.

18. The member for a semiconductor manufacturing apparatus according to claim 17, wherein the cooling plate-chuck bonding layer contains as the metal bonding material an aluminum alloy bonding material containing Mg or Si and Mg and is formed by thermal compression bonding at a temperature lower than or equal to the solidus temperature of the bonding material.

2. A cooling plate having an internal refrigerant path and used for cooling an alumina ceramic member, including:

a first substrate formed of a dense composite material, the dense composite material containing silicon carbide particles, titanium silicide, titanium silicon carbide, and titanium carbide, the silicon carbide particle content being in the range of 37 to 60 mass %, each of the amounts of titanium silicide, titanium silicon carbide, and titanium carbide being lower than the mass percentage of the silicon carbide particles, the percentage of open pores of the dense composite material being 1% or less,

a second substrate formed of the dense composite material and having a groove for the refrigerant path on a surface thereof facing the first substrate, and

a metal bonding layer between the first substrate and the surface of the second substrate in which the groove is formed, the metal bonding layer being formed by thermal compression bonding of the first substrate and the second substrate with a metal bonding material interposed therebetween.

19. The cooling plate according to claim 2, wherein the metal bonding layer contains as the metal bonding material an aluminum alloy bonding material containing Mg or Si and Mg and is formed by thermal compression bonding at a temperature lower than or equal to the solidus temperature of the bonding material.

20. The cooling plate according to claim 2, wherein the mass percentage of the titanium carbide in the dense composite material is lower than the mass percentage of the titanium silicide and the mass percentage of the titanium silicon carbide in the dense composite material.

21. The cooling plate according to claim 2, wherein the mass percentage of the titanium silicide in the dense composite material is higher than the mass percentage of the titanium silicon carbide.

22. The cooling plate according to claim 2, wherein in the dense composite material, at least one of the titanium silicide, the titanium silicon carbide, and the titanium carbide is disposed between the silicon carbide particles and covers the surface of the silicon carbide particles.

23. The cooling plate according to claim 2, wherein in the dense composite material, the titanium carbide is dispersed in the titanium silicide.

24. The cooling plate according to claim 2, wherein the titanium silicide is TiSi₂.

25. The cooling plate according to claim 2, wherein the difference in average linear thermal expansion coefficient between the dense composite material and alumina is 0.5 ppm/K or less at a temperature in the range of 40°

C. to 570°

C.

26. The cooling plate according to claim 2, wherein the dense composite material has an average linear thermal expansion coefficient in the range of 7.2 to 8.2 ppm/K at a temperature in the range of 40°

C. to 570°

C.

27. The cooling plate according to claim 2, wherein the dense composite material has a thermal conductivity of 75 W/mK or more.

28. The cooling plate according to claim 2, wherein the dense composite material has a four-point bending strength of 200 MPa or more.

29. The cooling plate according to claim 2, wherein in the dense composite material, the number of silicon carbide particles 10 μ

m or more in length along the major axis in a SEM image (backscattered electron image) of a region 90 μ

m in length and 120 μ

m in width magnified 1000 times is 16 or more.

31. A member for a semiconductor manufacturing apparatus comprising:

an alumina electrostatic chuck including an electrostatic electrode and a heater electrode,

a cooling plate according to claim 2, and

a cooling plate-chuck bonding layer formed by thermal compression bonding of the first substrate of the cooling plate and the electrostatic chuck with a metal bonding material interposed between a surface of the first substrate of the cooling plate and the electrostatic chuck.

32. The member for a semiconductor manufacturing apparatus according to claim 31, wherein the cooling plate-chuck bonding layer contains as the metal bonding material an aluminum alloy bonding material containing Mg or Si and Mg and is formed by thermal compression bonding at a temperature lower than or equal to the solidus temperature of the bonding material.

14. A method for manufacturing a cooling plate having an internal refrigerant path and used for cooling an alumina ceramic member, the method comprising the steps of:

(a) forming first to third substrates using a dense composite material, the dense composite material containing silicon carbide particles, titanium silicide, titanium silicon carbide, and titanium carbide, the silicon carbide particle content being in the range of 37 to 60 mass %, each of the amounts of titanium silicide, titanium silicon carbide, and titanium carbide being lower than the mass percentage of the silicon carbide particles, the percentage of open pores of the dense composite material being 1% or less,

(b) forming a punched portion in the second substrate by punching the second substrate from one surface to the other surface of the second substrate such that the punched portion has the same shape as the refrigerant path, and

(c) performing thermal compression bonding of the first to third substrates with a metal bonding material interposed between the first substrate and one surface of the second substrate and between the third substrate and the other surface of the second substrate.

16. The method for manufacturing the cooling plate according to claim 14, wherein in the step (c), the metal bonding material is an aluminum alloy bonding material containing Mg or Si and Mg, and thermal compression bonding is performed at a temperature lower than or equal to the solidus temperature of the bonding material.

15. A method for manufacturing a cooling plate having an internal refrigerant path and used for cooling an alumina ceramic member, the method comprising the steps of:

(a) forming a first substrate and a second substrate using a dense composite material, the dense composite material containing silicon carbide particles, titanium silicide, titanium silicon carbide, and titanium carbide, the silicon carbide particle content being in the range of 37 to 60 mass %, each of the amounts of titanium silicide, titanium silicon carbide, and titanium carbide being lower than the mass percentage of the silicon carbide particles, the percentage of open pores of the dense composite material being 1% or less,

(b) forming a groove for the refrigerant path in one surface of the second substrate, and

(c) performing thermal compression bonding of the first substrate and the second substrate with a metal bonding material interposed between the first substrate and the surface of the second substrate in which the groove is formed.

30. The method for manufacturing the cooling plate according to claim 15, wherein in the step (c), the metal bonding material is an aluminum alloy bonding material containing Mg or Si and Mg, and thermal compression bonding is performed at a temperature lower than or equal to the solidus temperature of the bonding material.