COOLING PLATE, METHOD FOR MANUFACTURING THE SAME, AND MEMBER FOR SEMICONDUCTOR MANUFACTURING APPARATUS
First Claim
1. A cooling plate having an internal refrigerant path and used for cooling an alumina ceramic member, including:
- a first substrate formed of a dense composite material, the dense composite material containing silicon carbide particles, titanium silicide, titanium silicon carbide, and titanium carbide, the silicon carbide particle content being in the range of 37 to 60 mass %, each of the amounts of titanium silicide, titanium silicon carbide, and titanium carbide being lower than the mass percentage of the silicon carbide particles, the percentage of open pores of the dense composite material being 1% or less,a second substrate formed of the dense composite material and having a punched portion, the punched portion having the same shape as the refrigerant path,a third substrate formed of the dense composite material,a first metal bonding layer between the first substrate and the second substrate formed by thermal compression bonding of the first substrate and the second substrate with a metal bonding material interposed therebetween, anda second metal bonding layer between the second substrate and the third substrate formed by thermal compression bonding of the second substrate and the third substrate with a metal bonding material interposed therebetween.
1 Assignment
0 Petitions
Accused Products
Abstract
A member 10 for a semiconductor manufacturing apparatus includes an alumina electrostatic chuck 20, a cooling plate 30, and a cooling plate-chuck bonding layer 40. The cooling plate 30 includes first to third substrates 31 to 33, a first metal bonding layer 34 between the first and second substrates 31 and 32, a second metal bonding layer 35 between the second and third substrates 32 and 33, and a refrigerant path 36. The first to third substrates 31 to 33 are formed of a dense composite material containing Si, SiC, and Ti. The metal bonding layers 34 and 35 are formed by thermal compression bonding of the substrates 31 to 33 with an Al—Si—Mg or Al—Mg metal bonding material interposed between the first and second substrates 31 and 32 and between the second and third substrates 32 and 33.
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Citations
32 Claims
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1. A cooling plate having an internal refrigerant path and used for cooling an alumina ceramic member, including:
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a first substrate formed of a dense composite material, the dense composite material containing silicon carbide particles, titanium silicide, titanium silicon carbide, and titanium carbide, the silicon carbide particle content being in the range of 37 to 60 mass %, each of the amounts of titanium silicide, titanium silicon carbide, and titanium carbide being lower than the mass percentage of the silicon carbide particles, the percentage of open pores of the dense composite material being 1% or less, a second substrate formed of the dense composite material and having a punched portion, the punched portion having the same shape as the refrigerant path, a third substrate formed of the dense composite material, a first metal bonding layer between the first substrate and the second substrate formed by thermal compression bonding of the first substrate and the second substrate with a metal bonding material interposed therebetween, and a second metal bonding layer between the second substrate and the third substrate formed by thermal compression bonding of the second substrate and the third substrate with a metal bonding material interposed therebetween. - View Dependent Claims (3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 17, 18)
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2. A cooling plate having an internal refrigerant path and used for cooling an alumina ceramic member, including:
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a first substrate formed of a dense composite material, the dense composite material containing silicon carbide particles, titanium silicide, titanium silicon carbide, and titanium carbide, the silicon carbide particle content being in the range of 37 to 60 mass %, each of the amounts of titanium silicide, titanium silicon carbide, and titanium carbide being lower than the mass percentage of the silicon carbide particles, the percentage of open pores of the dense composite material being 1% or less, a second substrate formed of the dense composite material and having a groove for the refrigerant path on a surface thereof facing the first substrate, and a metal bonding layer between the first substrate and the surface of the second substrate in which the groove is formed, the metal bonding layer being formed by thermal compression bonding of the first substrate and the second substrate with a metal bonding material interposed therebetween. - View Dependent Claims (19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 31, 32)
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14. A method for manufacturing a cooling plate having an internal refrigerant path and used for cooling an alumina ceramic member, the method comprising the steps of:
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(a) forming first to third substrates using a dense composite material, the dense composite material containing silicon carbide particles, titanium silicide, titanium silicon carbide, and titanium carbide, the silicon carbide particle content being in the range of 37 to 60 mass %, each of the amounts of titanium silicide, titanium silicon carbide, and titanium carbide being lower than the mass percentage of the silicon carbide particles, the percentage of open pores of the dense composite material being 1% or less, (b) forming a punched portion in the second substrate by punching the second substrate from one surface to the other surface of the second substrate such that the punched portion has the same shape as the refrigerant path, and (c) performing thermal compression bonding of the first to third substrates with a metal bonding material interposed between the first substrate and one surface of the second substrate and between the third substrate and the other surface of the second substrate. - View Dependent Claims (16)
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15. A method for manufacturing a cooling plate having an internal refrigerant path and used for cooling an alumina ceramic member, the method comprising the steps of:
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(a) forming a first substrate and a second substrate using a dense composite material, the dense composite material containing silicon carbide particles, titanium silicide, titanium silicon carbide, and titanium carbide, the silicon carbide particle content being in the range of 37 to 60 mass %, each of the amounts of titanium silicide, titanium silicon carbide, and titanium carbide being lower than the mass percentage of the silicon carbide particles, the percentage of open pores of the dense composite material being 1% or less, (b) forming a groove for the refrigerant path in one surface of the second substrate, and (c) performing thermal compression bonding of the first substrate and the second substrate with a metal bonding material interposed between the first substrate and the surface of the second substrate in which the groove is formed. - View Dependent Claims (30)
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Specification