SYSTEMS AND METHODS FOR SIMILARITY-BASED SEMICONDUCTOR PROCESS CONTROL
First Claim
1. A method for semiconductor fabrication process control, the method comprising:
- receiving a first semiconductor device wafer, the first semiconductor device wafer having a first patterned material layer thereon and being fabricated under a first set of parameters;
receiving a second semiconductor device wafer, the second semiconductor device wafer having a second patterned material layer thereon, the first and second patterned material layers being patterned with a common mask;
collecting metrology data from the first and second semiconductor device wafers, the metrology data including a first set of vectors associated with the first semiconductor device wafer and a second set of vectors associated with the second semiconductor device wafer;
determining a similarity index based in part on a similarity index value between a first vector from the first set of vectors and a second vector from the second set of vectors; and
continuing to process additional wafers under the first set of parameters when the similarity index is above a threshold value.
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Abstract
The present disclosure provides methods and systems for providing a similarity index in semiconductor process control. One of the methods disclosed herein is a method for semiconductor fabrication process control. The method includes steps of receiving a first semiconductor device wafer and receiving a second semiconductor device wafer. The method also includes a step of collecting metrology data from the first and second semiconductor device wafers. The metrology data includes a first set of vectors associated with the first semiconductor device wafer and a second set of vectors associated with the second semiconductor device wafer. The method includes determining a similarity index based in part on a similarity index value between a first vector from the first set of vectors and a second vector from the second set of vectors and continuing to process additional wafers under current parameters when the similarity index is above a threshold value.
32 Citations
20 Claims
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1. A method for semiconductor fabrication process control, the method comprising:
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receiving a first semiconductor device wafer, the first semiconductor device wafer having a first patterned material layer thereon and being fabricated under a first set of parameters; receiving a second semiconductor device wafer, the second semiconductor device wafer having a second patterned material layer thereon, the first and second patterned material layers being patterned with a common mask; collecting metrology data from the first and second semiconductor device wafers, the metrology data including a first set of vectors associated with the first semiconductor device wafer and a second set of vectors associated with the second semiconductor device wafer; determining a similarity index based in part on a similarity index value between a first vector from the first set of vectors and a second vector from the second set of vectors; and continuing to process additional wafers under the first set of parameters when the similarity index is above a threshold value. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A method for modeling semiconductor device fabrication, the method comprising:
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receiving a first semiconductor device wafer, the first semiconductor device wafer having a first patterned material layer thereon and being fabricated under a set of parameters; receiving a second semiconductor device wafer, the second semiconductor device wafer having a patterned material layer on a surface thereof, the first and second patterned material layers being patterned with a common mask; collecting metrology data from the first and second semiconductor device wafers; comparing the metrology data with modeled data provided by a computer model to generate a first correction map associated with the first semiconductor device wafer and a second correction map associated with the second semiconductor device wafer; determining a similarity index by comparison of the first and second correction maps; and updating the computer model when the similarity index is above a threshold value. - View Dependent Claims (12, 13, 14, 15)
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16. A semiconductor device fabrication process control system comprising:
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one or more processors, the one or more processors being in communication with a memory; one or more system inputs configured to facilitate control by an operator and communication with external devices; one or more system outputs configured to facilitate use by the operator, at least one system output providing communication to a display; a metrology data acquisition module configured to acquire metrology data from plurality of semiconductor device wafers that includes a first semiconductor device wafer and a control wafer, the metrology data from the first semiconductor device wafer and the control wafer being stored in the memory; a similarity check module configured to determine a similarity index of a first semiconductor device wafer by comparing the first semiconductor device wafer to a control wafer, the similarity check module further configured to output an indication of whether the similarity index is above a threshold value. - View Dependent Claims (17, 18, 19, 20)
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Specification