SEMICONDUCTOR DEVICE HAVING BURIED BIT LINES AND METHOD FOR FABRICATING THE SAME
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Abstract
A semiconductor device includes semiconductor bodies formed substantially perpendicular to a semiconductor substrate, buried bit lines formed in the semiconductor bodies and including a metal silicide; and barrier layers formed under and over the buried bit lines and containing germanium.
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Citations
25 Claims
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1-8. -8. (canceled)
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9. A method for fabricating a semiconductor device, comprising:
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forming semiconductor bodies in which a first barrier layer, a silicon layer and a second barrier layer are stacked substantially perpendicular to a semiconductor substrate; and forming buried bit lines by silicidating the silicon layer. - View Dependent Claims (10, 11, 12, 13, 14, 15)
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16. A method for fabricating a semiconductor device, comprising:
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forming a stack layer in which a first germanium-containing layer, a first silicon layer, a second germanium-containing layer and a second silicon layer are sequentially stacked, over a silicon substrate; selectively etching the stack layer, thereby defining trenches and forming semiconductor bodies with both sidewalls, which are separated from one another by the trenches; forming a passivation layer that covers sidewalls of the semiconductor bodies, to expose sidewalls of the first silicon layer; forming buried bit lines by silicidating the first silicon layer; and etching the second silicon layer, thereby forming a plurality of semiconductor pillars that includes channel regions of vertical channel transistors. - View Dependent Claims (17, 18, 19, 20, 21, 22, 23, 24, 25)
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Specification