ORGANIC LIGHT-EMITTING DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME

• US 20150084009A1
• Filed: 04/24/2014
• Published: 03/26/2015
• Est. Priority Date: 09/25/2013
• Status: Abandoned Application

• Current Assignee: Samsung Display Company Limited (Samsung Electronics Co. Ltd.)
• Original Assignee: Samsung Display Company Limited (Samsung Electronics Co. Ltd.)
• Inventors: You, Chun-Gi
• Application Number:
  US14/261,375
• Publication Number:
  US 20150084009A1
• Time in Patent Office: Days
• US Class Current: 257/40
• CPC Class Codes: H10K 2102/341 Short-circuit prevention
• CPC Class Codes: H10K 59/122 Pixel-defining structures or layers, e.g. banks

Abstract

An organic light-emitting display apparatus includes: a pixel electrode on a substrate; an environmental element on the pixel electrode; a protection insulating layer between the pixel electrode and the environmental element and at a location corresponding to the environmental element; an opposing electrode facing the pixel electrode; and an intermediate layer between the pixel electrode and the opposing electrode and including an organic emission layer.

Claims

1. An organic light-emitting display apparatus comprising:

a pixel electrode on a substrate;

an environmental element on the pixel electrode;

a protection insulating layer between the pixel electrode and the environmental element and at a location corresponding to the environmental element;

an opposing electrode facing the pixel electrode; and

an intermediate layer between the pixel electrode and the opposing electrode and comprising an organic emission layer.

2. The organic light-emitting display apparatus of claim 1, wherein a width of the protection insulating layer is substantially the same as that of the environmental element.

3. The organic light-emitting display apparatus of claim 1, wherein the protection insulating layer is between the pixel electrode and the intermediate layer.

4. The organic light-emitting display apparatus of claim 1, wherein the protection insulating layer comprises polyimide (PI), silicon oxide, and/or silicon nitride.

5. The organic light-emitting display apparatus of claim 1, wherein the protection insulating layer has a thickness in a range from about 700 Å

to about 1000 Å

.

6. The organic light-emitting display apparatus of claim 1, wherein the opposing electrode and the intermediate layer each comprise separated regions due to the environmental element.

7. The organic light-emitting display apparatus of claim 1, further comprising:

a thin film transistor electrically coupled to the pixel electrode and comprising an active layer, a gate electrode, a source electrode, a drain electrode, a first insulating layer between the active layer and the gate electrode, and a second insulating layer between the gate electrode and the source and drain electrodes;

a pad electrode comprising a first pad layer on a same layer as the source and drain electrodes, and a second pad layer on the first pad layer;

a third insulating layer covering the source and drain electrodes and both edges of the pad electrode and having an opening, the pixel electrode being in the opening; and

a pixel defining layer having an opening at a location corresponding to the opening in the third insulating layer, the pixel defining layer covering both edges of the pixel electrode.

8. The organic light-emitting display apparatus of claim 7, further comprising:

a capacitor comprising a first electrode on a same layer as the active layer;

a second electrode on a same layer as the gate electrode; and

a third electrode on a same layer as the source and drain electrodes.

9. The organic light-emitting display apparatus of claim 7, wherein the pixel electrode comprises a transparent conductive oxide layer and a semi-transmissive metal layer comprising silver (Ag) or a silver alloy, and

wherein the opposing electrode comprises a reflective metal layer.

10. The organic light-emitting display apparatus of claim 7, wherein the second insulating layer has an opening at a region corresponding to the opening in the third insulating layer,

wherein the opening in the second insulating layer, the opening in the third insulating layer, and the opening in the pixel defining layer overlap with each other, and

wherein the opening in the third insulating layer is larger than the opening in the pixel defining layer and is smaller than the opening in the second insulating layer.

11. The organic light-emitting display apparatus of claim 10, wherein an end portion of the pixel electrode is on a top surface of the third insulating layer.

12. The organic light-emitting display apparatus of claim 7, wherein the third insulating layer has a contact hole to electrically couple the pixel electrode with the source electrode or the drain electrode,

wherein a first contact layer is electrically coupled to the source electrode or the drain electrode, and a second contact layer is on the first contact layer and comprises a same material as that of the second pad layer, the first and second contact layers being disposed at a lower portion of the contact hole,

wherein a portion of the pixel electrode is at the contact hole, and

wherein the pixel electrode and the second contact layer are directly connected to each other.

13. A method of manufacturing an organic light-emitting display apparatus, the method comprising:

forming a pixel electrode on a substrate;

forming an insulating material on the pixel electrode;

forming a protection insulating layer by removing the insulating material except for a region at which an environmental element is located;

forming an intermediate layer on the pixel electrode and the environmental element; and

forming an opposing electrode on the intermediate layer.

14. The method of claim 13, further comprising:

after the forming of the pixel electrode, forming a pixel defining layer having an opening exposing a portion of the pixel electrode,

wherein the forming of the insulating material comprises forming the insulating material on the pixel defining layer and on the portion of the pixel electrode exposed by the pixel defining layer.

15. The method of claim 13, wherein the insulating material is formed of polyimide (PI), silicon oxide, and/or silicon nitride.

16. The method of claim 13, wherein the insulating material has a thickness in a range from about 700 Å

to about 1000 Å

.

17. The method of claim 13, wherein the insulating material is formed by printing.

18. The method of claim 13, wherein the intermediate layer and the opposing electrode are formed by vapor deposition.

19. The method of claim 13, wherein the protection insulating layer is formed by removing the insulating material by plasma treatment.