BOTTOM GATE TYPE THIN FILM TRANSISTOR, METHOD OF MANUFACTURING THE SAME, AND DISPLAY APPARATUS

• US 20150084048A1
• Filed: 11/26/2014
• Published: 03/26/2015
• Est. Priority Date: 12/05/2006
• Status: Active Grant

• Current Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Original Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Inventors: Hayashi, Ryo, Kaji, Nobuyuki, Yabuta, Hisato
• Granted Patent: US 9,905,699 B2
• Time in Patent Office: Days
• US Class Current: 257/43
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 29/66969 of devices having semiconductor bodies not comprising group 14 or group 13/15 materials comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials, comprising cuprous oxide or cuprous iodide H01L21/02365
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

Provided is a bottom gate type thin film transistor including on a substrate (1) a gate electrode (2), a first insulating film (3) as a gate insulating film, an oxide semiconductor layer (4) as a channel layer, a second insulating film (5) as a protective layer, a source electrode (6), and a drain electrode (7), in which the oxide semiconductor layer (4) includes an oxide including at least one selected from the group consisting of In, Zn, and Sn, and the second insulating film (5) includes an amorphous oxide insulator formed so as to be in contact with the oxide semiconductor layer (4) and contains therein 3.8×10¹⁹ molecules/cm³ or more of a desorbed gas observed as oxygen by temperature programmed desorption mass spectrometry.

Claims

1-9. -9. (canceled)

10. A thin film transistor, comprising on a substrate:

a gate electrode;

a first insulating film as a gate insulating film;

an oxide semiconductor layer as a channel layer;

a second insulating film as a protective layer;

a source electrode; and

a drain electrode,

wherein the oxide semiconductor layer comprises at least one of a Sn—

In—

Zn oxide, an In—

Zn—

Ga oxide, an In—

Sn oxide, an In—

Ga oxide, an In—

Zn oxide, and an In oxide, and

wherein the second insulating film is formed in an atmosphere including an oxidizing gas so as to achieve an on/off ratio of the transistor of 10⁵ or more.

11. The thin film transistor according to claim 10, wherein the second insulating film is made of amorphous SiOx.

12. The thin film transistor according to claim 10, wherein the second insulating film is in contact with the oxide semiconductor layer, and

wherein there is a region where the second insulating film lies between the source electrode and the oxide semiconductor layer and between the drain electrode and the oxide semiconductor layer.

13. An apparatus, comprising:

an electro-optical device having a pixel electrode; and

the thin film transistor according to claim 10,

wherein the pixel electrode is connected to one of the source electrode and the drain electrode of the thin film transistor.

14. The apparatus according to claim 13, wherein the electro-optical device is an electroluminescence device.

15. The apparatus according to claim 13, wherein the electro-optical device is a liquid crystal cell.