METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
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Accused Products
Abstract
An object is to provide a method for manufacturing a semiconductor device including an oxide semiconductor and having improved electric characteristics. The semiconductor device includes an oxide semiconductor film, a gate electrode overlapping the oxide semiconductor film, and a source electrode and a drain electrode electrically connected to the oxide semiconductor film. The method includes the steps of forming a first insulating film including gallium oxide over and in contact with the oxide semiconductor film; forming a second insulating film over and in contact with the first insulating film; forming a resist mask over the second insulating film; forming a contact hole by performing dry etching on the first insulating film and the second insulating film; removing the resist mask by ashing using oxygen plasma; and forming a wiring electrically connected to at least one of the gate electrode, the source electrode, and the drain electrode through the contact hole.
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Citations
17 Claims
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1. (canceled)
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2. A semiconductor device comprising:
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an oxide semiconductor layer comprising a channel formation region over an insulating surface; a source electrode and a drain electrode connected to the oxide semiconductor layer; a first layer over and in contact with the source electrode, the drain electrode, and the channel formation region; a second layer over the first layer; and a wiring over the second layer; wherein the first layer comprises gallium and oxygen, wherein the wiring is connected to the source electrode or the drain electrode through a contact hole in the first layer and the second layer, and wherein a diameter of the contact hole in the first layer is smaller than a diameter of the contact hole in the second layer. - View Dependent Claims (3, 4, 5, 6, 7, 8, 9, 10)
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11. A semiconductor device comprising:
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an oxide semiconductor layer comprising a channel formation region over an insulating surface, the oxide semiconductor layer comprising indium and zinc; a source electrode and a drain electrode connected to the oxide semiconductor layer; a first layer over and in contact with the source electrode, the drain electrode, and the channel formation region; a gate insulating layer over the first layer; a gate electrode over the gate insulating layer; a second layer over the gate electrode; and a wiring over the second layer; wherein the first layer comprises gallium and oxygen, and wherein the wiring is connected to the source electrode or the drain electrode through a contact hole in the first layer and the second layer. - View Dependent Claims (12, 13, 14, 15, 16, 17)
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Specification