PIXEL STRUCTURE OF INORGANIC LIGHT EMITTING DIODE

• US 20150084054A1
• Filed: 05/15/2014
• Published: 03/26/2015
• Est. Priority Date: 09/25/2013
• Status: Active Grant

• Current Assignee: AU Optronics Corporation
• Original Assignee: AU Optronics Corporation
• Inventors: Huang, Yu-Sheng, Guo, Ting-Wei, Fan, Chun-Pin, Chen, Ying-Ying, Chen, Kuo-Hsiang
• Granted Patent: US 9,240,396 B2
• Time in Patent Office: Days
• US Class Current: 257/72
• CPC Class Codes: G02F 1/00 Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
• CPC Class Codes: H01L 25/0753 the devices being arranged next to each other
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

This disclosure provides a pixel structure of inorganic light emitting diode. A first power line is disposed between two adjacent first sub-pixel and second sub-pixel, and the first sub-pixel and second sub-pixel are electrically connected to the same first power line. Also, a first reference line is disposed on an opposite side of the first sub-pixel away from the second sub-pixel, and a second reference line is disposed on an opposite side of the second sub-pixel away from the first sub-pixel. The first sub-pixel and the second sub-pixel have substantially the same length.

Claims

1. A pixel structure of inorganic light emitting diode, comprising:

a plurality of sub-pixels defined on an insulation substrate, the sub-pixels being arranged in an identical row or an identical column, and the sub-pixels at least comprising a first sub-pixel and a second sub-pixel adjacent to the first sub-pixel, wherein the first sub-pixel at least comprises a first boundary, a second boundary and a third boundary connected to the first boundary and the second boundary, the second sub-pixel at least comprises a fourth boundary, a fifth boundary and a sixth boundary connected to the fourth boundary and the fifth boundary, and a common boundary is disposed at a border between the first sub-pixel and the second sub-pixel and connected to the first boundary, the second boundary, the fourth boundary and the fifth boundary;

a first transistor unit, disposed in the first sub-pixel, the first transistor unit at least comprising a first switch element, a second switch element and a first driving element;

a second transistor unit, disposed in the second sub-pixel, the second transistor unit at least comprising a third switch element, a fourth switch element and a second driving element;

at least one first reference line, disposed on the insulation substrate and adjacent to the third boundary of the first sub-pixel, wherein the first reference line is electrically connected to a first end of the second switch element;

at least one second reference line, disposed on the insulation substrate and adjacent to the sixth boundary of the second sub-pixel, wherein the second reference line is electrically connected to a first end of the fourth switch element;

at least one data line, disposed on the insulation substrate and electrically connected to a first end of the first switch element and a first end of the third switch element;

at least one scan line, disposed on the insulation substrate and electrically connected to a control end of the first switch element and a control end of the third switch element;

a first pixel electrode, disposed in the first sub-pixel and electrically connected to a first end of the first driving element;

a second pixel electrode, disposed in the second sub-pixel and electrically connected to a first end of the second driving element;

at least two first inorganic light emitting diodes, disposed on the first pixel electrode of the first sub-pixel, each of the first inorganic light emitting diodes at least comprising a first electrode, a second electrode and a first Inorganic light emitting layer interposed between the first electrode and the second electrode;

at least two second inorganic light emitting diodes, disposed on the second pixel electrode of the second sub-pixel, each of the second inorganic light emitting diodes at least comprising a third electrode, a fourth electrode and a second Inorganic light emitting layer interposed between the third electrode and the fourth electrode;

at least one first power line, disposed on the insulation substrate and adjacent to the common boundary, wherein the first power line is electrically connected to the second electrode of each of the first inorganic light emitting diodes and the fourth electrode of each of the second inorganic light emitting diodes; and

at least one second power line, disposed on the insulation substrate and electrically connected to a second end of the first driving element and a second end of the second driving element.

2. The pixel structure of inorganic light emitting diode according to claim 1, wherein a first gap is formed between the first power line and the first reference line projected on the insulation substrate, a second gap is formed between the first power line and the second reference line projected on the insulation substrate, and the first gap is substantially equal to the second gap.

3. The pixel structure of inorganic light emitting diode according to claim 1, further comprising a conductive adhesive layer, interposed between the first pixel electrode and the first electrode of each of the first inorganic light emitting diodes, and interposed between the second pixel electrode and the third electrode of each of the second inorganic light emitting diodes.

4. The pixel structure of inorganic light emitting diode according to claim 1, further comprising a patterned bank, disposed on the insulation substrate, wherein the patterned bank has at least two first openings and at least two second openings, each of the first openings exposes each of the first inorganic light emitting diodes and each of the second openings exposes each of the second inorganic light emitting diodes.

5. The pixel structure of inorganic light emitting diode according to claim 1, further comprising a passivation layer, disposed on the insulation substrate and covering the insulation substrate, wherein the passivation layer exposes a portion of the first pixel electrode, a portion of the second pixel electrode, each of the first inorganic light emitting diodes, each of the second inorganic light emitting diodes, a portion of the first reference line and a portion of the second reference line.

6. The pixel structure of inorganic light emitting diode according to claim 5, further comprising a filling layer, filled in the portion of the first pixel electrode and the portion of the second pixel electrode, exposed by the passivation layer.

7. The pixel structure of inorganic light emitting diode according to claim 5, further comprising a transparent electrode, disposed on the passivation layer, and electrically connected to the second electrode of each of the first inorganic light emitting diodes, the fourth electrode of each of the second inorganic light emitting diodes and the at least one first power line.

8. The pixel structure of inorganic light emitting diode according to claim 1, wherein an electric potential of the first power line is different from an electric potential of the second power line.

9. The pixel structure of inorganic light emitting diode according to claim 1, wherein the second reference line is not disposed between the first power line and the first reference line and/or the first reference line is not disposed between the first power line and the second reference line.

10. The pixel structure of inorganic light emitting diode according to claim 1, wherein the first transistor unit further comprises a fifth switch element electrically connected to the first inorganic light emitting diodes and the second switch element, and the second transistor unit further comprises a sixth element, electrically connected to the second inorganic light emitting diodes and the fourth switch element.

11. The pixel structure of inorganic light emitting diode according to claim 1, wherein the first transistor unit further comprises a fifth switch element and a sixth switch element, the fifth switch element is electrically connected to the second switch element and the sixth switch element and the sixth switch element is electrically connected to the first inorganic light emitting diodes;

and the second transistor unit further comprises a seventh switch element and an eighth switch element, the seventh switch element is electrically connected to the fourth switch element and the eighth switch element and the eighth switch element is electrically connected to the second inorganic light emitting diodes.

12. The pixel structure of inorganic light emitting diode according to claim 1, wherein the first transistor unit further comprises a fifth switch element, a sixth switch element and a seventh switch element, the fifth switch element is electrically connected to the second power line and the sixth switch element, the sixth switch element is electrically connected to the first switch element and the first driving element and the seventh switch element is electrically connected to the first driving element and the second switch element;

and the second transistor unit further comprises an eighth switch element, a ninth switch element and a tenth switch element, the eighth switch element is electrically connected to the second power line and the ninth switch element, the ninth switch element is electrically connected to the third switch element and the second driving element and the tenth switch element is electrically connected to the second driving element and the fourth switch element.