METHOD FOR MANUFACTURING LIGHT-EMITTING DEVICE AND LIGHT-EMITTING DEVICE MANUFACTURED USING SAME

• US 20150084081A1
• Filed: 01/10/2013
• Published: 03/26/2015
• Est. Priority Date: 02/16/2012
• Status: Abandoned Application

• Current Assignee: Korea University Research and Business Foundation (Korea University)
• Original Assignee: Korea University Research and Business Foundation (Korea University)
• Inventors: Kim, Tae geun, Kim, Kyeong-heon
• Application Number:
  US14/395,874
• Publication Number:
  US 20150084081A1
• Time in Patent Office: Days
• US Class Current: 257/98
• CPC Class Codes: H01L 2933/0016 relating to electrodes
• CPC Class Codes: H01L 2933/0058 relating to optical field-shaping elements
• CPC Class Codes: H01L 2933/0091 Scattering means in or on the semiconductor body or semiconductor body package H01L33/22 takes precedence
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers
• CPC Class Codes: H01L 33/405 Reflective materials
• CPC Class Codes: H01L 33/42 Transparent materials
• CPC Class Codes: H01L 33/60 Reflective elements

Abstract

The present invention relates to a method for manufacturing a light-emitting device and the light-emitting device manufactured using same, which can reduce manufacturing costs, form nanopatterns in a large area, and increase light extraction efficiency. One embodiment of the present invention discloses the method for manufacturing a light-emitting device, comprising: a light-emitting structure preparation step for preparing a light-emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, which are formed sequentially; a light extraction layer formation step for forming the upper part of the second conductive semiconductor layer as a light extraction layer having an uneven pattern; a dipping step for dipping the light-emitting structure having the light extraction layer in a solution in which nanomaterials are dispersed; and an adsorption step for adsorbing the nanomaterials to the light extraction layer.

Claims

1. A method for manufacturing a light-emitting device, the method comprising:

a light-emitting structure preparation step for preparing a light-emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, which are formed sequentially;

a light extraction layer formation step for forming an upper part of the second conductive semiconductor layer as a light extraction layer having an uneven pattern;

a dipping step for dipping the light-emitting structure having the light extraction layer in a solution in which nanomaterials have been dispersed; and

an adsorption step for adsorbing the nanomaterials to the light extraction layer,

wherein in the adsorption step, the nanomaterials are partially adsorbed to the light extraction layer such that a nanopattern having a plurality of uneven portions is formed on the light extraction layer.

2. The method of claim 1, wherein the adsorption step is performed by a thermal processing method.

3. The method of claim 1, wherein in the dipping step, transparent materials are used as the nanomaterials.

4. The method of claim 3, wherein the nanomaterials are formed of carbon nano tubes or graphenes.

5. The method of claim 1, wherein a convex part of the uneven pattern has a triangular conical shape.

6. The method of claim 1, further comprising forming an electrode on the light extraction layer after the adsorption step.

7. The method of claim 6, wherein in the light-emitting structure preparation step, a transparent conductive layer and a reflective layer are further formed, sequentially on one surface of the first conductive semiconductor layer opposite to another surface thereof where the active layer has been formed.

8. The method of claim 7, further comprising a support substrate attachment step for further forming an adhesive layer and a support substrate, sequentially on one surface of the reflective layer opposite to another surface thereof where the transparent conductive layer has been formed.

9. A light-emitting device, comprising:

a first conductive semiconductor layer;

an active layer formed on the first conductive semiconductor layer;

a second conductive semiconductor layer formed on the active layer, and including a light extraction layer having an uneven pattern at an upper part thereof; and

a nanopattern formed as nanomaterials are partially adsorbed to the light extraction layer,

wherein the nanopattern forms a plurality of uneven portions on the light extraction layer.

10. The light-emitting device of claim 9, wherein the nanomaterials are transparent materials.

11. The light-emitting device of claim 9, wherein the nanomaterials are formed of carbon nano tubes or graphenes.

12. The light-emitting device of claim 9, wherein a convex part of the uneven pattern has a triangular conical shape.

13. The light-emitting device of claim 9, further comprising an electrode formed on the light extraction layer.

14. The light-emitting device of claim 13, further comprising a transparent conductive layer and a reflective layer formed sequentially on one surface of the first conductive semiconductor layer opposite to another surface thereof where the active layer has been formed.

15. The light-emitting device of claim 14, further comprising an adhesive layer and a support substrate sequentially formed on one surface of the reflective layer opposite to another surface thereof where the transparent conductive layer has been formed.

16. The light-emitting device of claim 9, wherein the first conductive type is a ‘

p’

-type, and the second conductive type is an ‘

n’

-type.