SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
First Claim
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1. A semiconductor device comprising:
- an MRAM chip including a semiconductor substrate, and a memory cell array area comprising magnetoresistive elements which are provided on the semiconductor substrate; and
a magnetic shield layer surrounding the memory cell array area in a circumferential direction of the MRAM chip, and having a closed magnetic path.
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Abstract
According to one embodiment, a semiconductor device includes a MRAM chip including a semiconductor substrate and a memory cell array area includes magnetoresistive elements which are provided on the semiconductor substrate, and a magnetic shield layer surrounding the memory cell array area in a circumferential direction of the MRAM chip, and having a closed magnetic path.
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Citations
20 Claims
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1. A semiconductor device comprising:
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an MRAM chip including a semiconductor substrate, and a memory cell array area comprising magnetoresistive elements which are provided on the semiconductor substrate; and a magnetic shield layer surrounding the memory cell array area in a circumferential direction of the MRAM chip, and having a closed magnetic path. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A method of manufacturing a semiconductor device, the method comprising:
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forming an MRAM chip including a semiconductor substrate and a memory cell array area comprising magnetoresistive elements which are provided on the semiconductor substrate; and forming a magnetic shield layer surrounding the memory cell array area in a circumferential direction of the MRAM chip and having a closed magnetic path by an electrolytic plating. - View Dependent Claims (14, 15, 16, 17, 18, 19, 20)
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Specification