METHOD FOR MANUFACTURING LIGHT EMITTING DIODE

• US 20150087099A1
• Filed: 09/10/2014
• Published: 03/26/2015
• Est. Priority Date: 09/25/2013
• Status: Abandoned Application

• Current Assignee: Advanced Optoelectronic Technology, Inc.
• Original Assignee: Advanced Optoelectronic Technology, Inc.
• Inventors: YANG, Shun-Kuei, HUNG, Tzu-Chien
• Application Number:
  US14/482,566
• Publication Number:
  US 20150087099A1
• Time in Patent Office: Days
• US Class Current: 438/47
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/12 with a stress relaxation structure, e.g. buffer layer

Abstract

A method for manufacturing a light emitting diode includes following steps: providing a substrate; forming a buffer layer on the substrate; forming a transitional layer on the buffer layer, the buffer layer being made of InGaN; forming an epitaxial layer on the transitional layer; activating the transitional layer by a way of radiating the transitional layer using laser; and when radiated with a laser, the transitional layer separates from the epitaxial layer.

Claims

1. A method of manufacturing a light emitting diode comprising:

providing a substrate;

forming a buffer layer on the substrate;

forming a transitional layer on the buffer layer;

forming an epitaxial layer on the transitional layer; and

radiating the transitional layer with a laser;

wherein, when radiated with a laser, the transitional layer separates from the epitaxial layer.

2. The method of claim 1, wherein the wavelength of the laser is larger than 420 nm.

3. The method of claim 1, wherein the wavelength of the laser is 420 nm-520 nm.

4. The method of claim 1, wherein the transitional layer is activated in temperatures of 1000-1400°

C.

5. The method of claim 1, wherein the buffer layer is an un-doped GaN layer.

6. The method of claim 1, wherein the buffer layer, the transitional layer and the epitaxial layer are formed by a way of Metal-Organic Chemical Vapor Deposition, Molecular Beam Epitaxy, or Hydride Vapor Phase Epitaxy.

7. The method of claim 1, wherein the substrate is made of sapphire.

8. The method of claim 1, wherein the epitaxial layer comprises a first semiconductor, an active layer formed on the first semiconductor, and an second semiconductor formed on the active layer.

9. The method of claim 1, wherein a thickness of the transitional layer varies from 100 A to 200 A.

10. The method of claim 1, wherein the transitional layer is radiated by laser to contract to ball-shaped configurations to separate from the epitaxial layer.

11. The method of claim 1, wherein the transitional layer is made of InGaN.

12. A method for manufacturing a light emitting diode comprising:

providing a substrate;

forming a buffer layer on the substrate;

forming a transitional layer on the buffer layer, the buffer layer being made of InGaN;

forming an epitaxial layer on the transitional layer;

activating the transitional layer by a way of radiating the transitional layer using laser to remove the substrate and the buffer layer from the epitaxial layer; and

wherein the wavelength of laser is 420 nm-520 nm, and the transitional layer is radiated by the laser in temperatures of 1000-1400°

C.

13. The method of claim 12, wherein the transitional layer is radiated by the laser to represent ball-shaped configurations.