FILM FORMATION APPARATUS AND FILM FORMATION METHOD

• US 20150090693A1
• Filed: 08/29/2014
• Published: 04/02/2015
• Est. Priority Date: 10/02/2013
• Status: Active Grant

• Current Assignee: NuFlare Technology, Inc. (Toshiba Corporation)
• Original Assignee: NuFlare Technology, Inc. (Toshiba Corporation)
• Inventors: ITO, Hideki, SUZUKI, Kunihiko, TSUCHIDA, Hidekazu, KAMATA, Isaho, ITO, Masahiko, FUJIBAYASHI, Hiroaki, NAITO, Masami, ADACHI, Ayumu, NISHIKAWA, Koichi
• Granted Patent: US 9,518,322 B2
• Time in Patent Office: Days
• US Class Current: 216/79
• CPC Class Codes: C23C 16/325 Silicon carbide
• CPC Class Codes: C23C 16/45519 Inert gas curtains
• CPC Class Codes: C23C 16/45565 Shower nozzles
• CPC Class Codes: C23C 16/4586 Elements in the interior of the support, e.g. electrodes, heating or cooling devices
• CPC Class Codes: C23C 16/466 using thermal contact gas
• CPC Class Codes: C30B 25/10 Heating of the reaction chamber or the substrate
• CPC Class Codes: C30B 25/14 Feed and outlet means for the gases; Modifying the flow of the reactive gases
• CPC Class Codes: C30B 29/36 Carbides

Abstract

A film formation apparatus according to an embodiment includes: a film formation chamber performing film formation on a substrate; a cylindrical liner provided inside of a sidewall of the film formation chamber; a process-gas supply unit provided at a top of the film formation chamber and having a first gas ejection hole supplying a process gas to inside of the liner; a first heater provided outside the liner in the film formation chamber and heating the substrate from above; a second heater heating the substrate from below; and a shielding gas supply unit having a plurality of second gas ejection holes supplying a shielding gas to a position closer to a sidewall of the film formation chamber than a position of the first gas ejection hole.

Claims

1. A film formation apparatus comprising:

a film formation chamber performing film formation on a substrate;

a cylindrical liner provided inside of a sidewall of the film formation chamber;

a process-gas supply unit provided at a top of the film formation chamber and having a first gas ejection hole supplying a process gas to inside of the liner;

a first heater provided outside the liner in the film formation chamber and heating the substrate from above;

a second heater heating the substrate from below; and

a shielding gas supply unit having a plurality of second gas ejection holes supplying a shielding gas to a position closer to a sidewall of the film formation chamber than a position of the first gas ejection hole.

2. The apparatus of claim 1, wherein the shielding gas consists of at least one of a hydrogen gas, an argon gas, and a helium gas.

3. The apparatus of claim 1, further comprising a gas switching unit switching the shielding gas to supply the shielding gas, wherein

the gas switching unit supplies an argon gas when a temperature within the film formation chamber is increased and supplies at least one of a hydrogen gas and a helium gas when inside of the film formation chamber is cooled.

4. The apparatus of claim 2, further comprising a gas switching unit switching the shielding gas to supply the shielding gas, wherein

the gas switching unit supplies an argon gas when a temperature within the film formation chamber is increased and supplies at least one of a hydrogen gas and a helium gas when inside of the film formation chamber is cooled.

5. The apparatus of claim 1, wherein the process-gas supply unit comprises a shower plate arranged horizontally and having a plurality of gas flow paths connected to a plurality of the first gas ejection holes.

6. The apparatus of claim 1, wherein the process-gas supply unit supplies a gas including an SiC source gas or an etching gas.

7. The apparatus of claim 1, wherein a horizontal position of the second gas ejection hole is between the first gas ejection hole and the liner.

8. The apparatus of claim 1, wherein a horizontal position of the second gas ejection hole is closer to a sidewall of the film formation chamber than a position of the first gas ejection hole.

9. The apparatus of claim 1, wherein the second gas ejection hole supplies the shielding gas vertically downward.

10. The apparatus of claim 1, further comprising a closing member closing at least a part of the first gas ejection holes.

11. The apparatus of claim 5, wherein

the gas flow path comprises a plurality of first coupling parts supplying the process gas to the process-gas supply unit, and

the film formation apparatus further comprising:

a gas pipe having a plurality of second coupling parts for supplying the process gas to the gas flow path; and

a coupling pipe connecting a part of the first coupling parts to a part of the second coupling parts.

12. The apparatus of claim 1, further comprising a reflector provided below the process-gas supply unit and suppressing heat in the film formation chamber to be transmitted externally.

13. A film formation method comprising:

carrying an SiC substrate into a film formation chamber;

supplying a process gas including an SiC source gas to the film formation chamber via a shower plate provided at a top of the film formation chamber to perform film formation on the SiC substrate; and

ejecting a shielding gas to a position closer to a sidewall of the film formation chamber than a position of the shower plate.

14. The method of claim 13, wherein the shielding gas includes at least one of a hydrogen gas, an argon gas, and a helium gas.

15. The method of claim 13, wherein as the shielding gas, an argon gas is supplied when a temperature within the film formation chamber is increased, and at least one of a hydrogen gas and a helium gas is supplied when inside of the film formation chamber is cooled.

16. The method of claim 14, wherein as the shielding gas, an argon gas is supplied when a temperature within the film formation chamber is increased, and at least one of a hydrogen gas and a helium gas is supplied when inside of the film formation chamber is cooled.

17. The method of claim 13, wherein the process gas is a gas including an SiC source gas or an etching gas.

18. The method of claim 13, wherein the shielding gas is supplied vertically downward.