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RRAM CELL STRUCTURE WITH LATERALLY OFFSET BEVA/TEVA

  • US 20150090949A1
  • Filed: 09/30/2013
  • Published: 04/02/2015
  • Est. Priority Date: 09/30/2013
  • Status: Active Grant
First Claim
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1. A resistive random access memory (RRAM) device comprising:

  • a resistive random-access memory (RRAM) cell having a first surface and a second surface;

    a first conductive interconnect structure abutting the first surface at a first location; and

    a second conductive interconnect structure abutting the second surface at a second location, wherein the first and second locations are laterally offset from one another.

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