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POWER MOSFET DEVICES INCLUDING EMBEDDED SCHOTTKY DIODES AND METHODS OF FABRICATING THE SAME

  • US 20150091084A1
  • Filed: 07/03/2014
  • Published: 04/02/2015
  • Est. Priority Date: 09/27/2013
  • Status: Abandoned Application
First Claim
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1. A semiconductor device, comprising:

  • a semiconductor substrate;

    an epi-semiconductor layer disposed on the semiconductor substrate;

    trenches disposed in the epi-semiconductor layer defining an active region between the trenches;

    a groove region disposed in an upper surface of the active region and separating first and second active protrusions of the active region;

    a gate structure disposed in each of the trenches;

    a front-side conductive pattern in the groove region;

    a first conductivity-type drift region, first and second body channel regions, and first and second source regions configured to form a transistor with the gate structure, wherein the first conductivity-type drift region is disposed in the active region of the epi-semiconductor layer, wherein the first and second body channel regions have a second conductivity-type different from the first conductivity-type and are spaced apart from each other, and wherein the first and second source regions have the first conductivity-type and are spaced apart from each other on opposite sides of the groove region; and

    a Schottky semiconductor region having the first conductivity-type disposed between the first and second body channel regions in the groove region and in the active region under a bottom surface of the groove region, and configuring a Schottky diode with the front-side conductive pattern.

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