Perpendicular Spin Transfer Torque Memory (STTM) Device with Coupled Free Magnetic Layers

• US 20150091110A1
• Filed: 09/27/2013
• Published: 04/02/2015
• Est. Priority Date: 09/27/2013
• Status: Abandoned Application

• Current Assignee: Intel Corporation
• Original Assignee: Roksana Golizadeh Mojarad
• Inventors: Kuo, Charles C., Doczy, Mark L., Doyle, Brian S., Suri, Satyarth, Chau, Robert S., Kencke, David L., Golizadeh Mojarad, Roksana, Chaudhry, Anurag, Oguz, Kaan
• Application Number:
  US14/039,668
• Publication Number:
  US 20150091110A1
• Time in Patent Office: Days
• US Class Current: 257/421
• CPC Class Codes: G11C 11/161 details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
• CPC Class Codes: G11C 29/028 with adaption or trimming of parameters
• CPC Class Codes: G11C 29/56008 Error analysis, representation of errors
• CPC Class Codes: G11C 29/56012 Timing aspects, clock generation, synchronisation
• CPC Class Codes: H01F 10/3254 the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
• CPC Class Codes: H01F 10/3286 Spin-exchange coupled multilayers having at least one layer with perpendicular magnetic anisotropy
• CPC Class Codes: H01F 10/329 Spin-exchange coupled multilayers wherein the magnetisation of the free layer is switched by a spin-polarised current, e.g. spin torque effect
• CPC Class Codes: H10N 50/10 Magnetoresistive devices
• CPC Class Codes: H10N 50/85 Magnetic active materials

Abstract

Perpendicular spin transfer torque memory (STTM) devices with enhanced stability and damping are described. For example, a material layer stack for a magnetic tunneling junction includes a fixed magnetic layer. A dielectric layer is disposed above the fixed magnetic layer. A first free magnetic layer is disposed above the dielectric layer. A second free magnetic layer is magnetically coupled with the first free magnetic layer.

Claims

1. A material layer stack for a magnetic tunneling junction, the material layer stack comprising:

a fixed magnetic layer;

a dielectric layer disposed above the fixed magnetic layer;

a first free magnetic layer disposed above the dielectric layer; and

a second free magnetic layer magnetically coupled with the first free magnetic layer.

2. The material layer stack of claim 1, further comprising:

a conductive material layer disposed between the first and second free magnetic layers, the conductive material layer to magnetically couple the first and second free magnetic layers to increase an effective thickness of the first free magnetic layer.

3. The material layer stack of claim 2, wherein the conductive material layer comprises at least one of the following:

Ruthium (Ru), Tantalum (Ta), Titanium (Ti), Zirconium (Zr), Hafnium (Hf), and Magnesium (Mg).

4. The material layer stack of claim 2, wherein the first free magnetic layer comprises CoFeB.

5. The material layer stack of claim 1, wherein the second free magnetic layer comprises CoFeB.

6. The material layer stack of claim 1, wherein the second free magnetic layer comprises one or more pairs of alternating ferromagnetic and non-magnetic layers disposed on the dielectric material layer.

7. The material layer stack of claim 6, wherein the alternating ferromagnetic and non-magnetic layers comprise cobalt (Co) and palladium (Pd), respectively, with a Pd layer disposed on the conductive material layer.

8. The material layer stack of claim 1, further comprising:

an additional dielectric layer disposed above the second free magnetic layer, wherein the dielectric layers each comprise magnesium oxide (MgO).

9. A non-volatile memory device, comprising:

a bottom electrode;

a fixed magnetic layer disposed above the bottom electrode;

a dielectric layer disposed above the fixed magnetic layer;

a first free magnetic layer disposed above the dielectric layer;

a second free magnetic layer magnetically coupled with the first free magnetic layer;

a top electrode disposed above the second free magnetic layer; and

a transistor electrically connected to the top or the bottom electrode, a source line, and a word line.

10. The non-volatile memory device of claim 9, further comprising:

a conductive material layer disposed between the first and second free magnetic layers, the conductive material layer to magnetically couple the first and second free magnetic layers to increase an effective thickness of the first free magnetic layer.

11. The non-volatile memory device of claim 10, wherein the conductive material layer comprises at least one of the following:

Ruthium (Ru), Tantalum (Ta), Titanium (Ti), Zirconium (Zr), Hafnium (Hf), and Magnesium.

12. The non-volatile memory device of claim 10, wherein the first free magnetic layer comprises CoFeB.

13. The non-volatile memory device of claim 9, wherein the second free magnetic layer comprises CoFeB.

14. The non-volatile memory device of claim 9, wherein the second free magnetic layer comprises one or more pairs of alternating ferromagnetic and non-magnetic layers disposed on the dielectric material layer.

15. The non-volatile memory device of claim 14, wherein the alternating ferromagnetic and non-magnetic layers comprise cobalt (Co) and palladium (Pd), respectively, with a Pd layer disposed on the conductive material layer.

16. The non-volatile memory device of claim 9, further comprising:

an additional dielectric layer disposed above the second free magnetic layer, wherein the dielectric layers each comprise magnesium oxide (MgO).

17. A material layer stack for a magnetic tunneling junction, the material layer stack comprising:

a fixed magnetic layer;

a dielectric layer disposed above the fixed magnetic layer;

a free magnetic layer disposed above the dielectric layer; and

a multi-layer stack that alternates ferromagnetic and non-magnetic layers, the multi-layer stack is magnetically coupled with the free magnetic layer.

18. The material layer stack of claim 17, further comprising:

a conductive material layer disposed between the free magnetic layer and the multi-layer stack, the conductive material layer to magnetically couple the free magnetic layer to the multi-layer stack to increase an effective thickness of the free magnetic layer.

19. The material layer stack of claim 18, wherein the conductive material layer comprises at least one of the following:

Ruthium (Ru), Tantalum (Ta), Titanium (Ti), Zirconium (Zr), Hafnium (Hf), and Magnesium.

20. The material layer stack of claim 17, wherein the free magnetic layer comprises CoFeB.

21. The material layer stack of claim 18, wherein the alternating ferromagnetic and non-magnetic layers comprise cobalt (Co) and palladium (Pd), respectively, with a Pd layer disposed on the conductive material layer.

22. The material layer stack of claim 17, further comprising:

an additional free magnetic layer disposed above the multi-layer stack.

23. The material layer stack of claim 22, further comprising:

an additional conductive material layer disposed between the additional free magnetic layer and the multi-layer stack, the conductive material layer to magnetically couple the additional free magnetic layer to the multi-layer stack.