WAFER LEVEL SEALING METHODS WITH DIFFERENT VACUUM LEVELS FOR MEMS SENSORS

• US 20150091153A1
• Filed: 09/30/2013
• Published: 04/02/2015
• Est. Priority Date: 09/30/2013
• Status: Active Grant

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Inventors: Liu, Yu-Chia, Chu, Chia-Hua, Chang, Kuei-Sung, Cheng, Chun-Wen
• Granted Patent: US 9,035,451 B2
• Time in Patent Office: Days
• US Class Current: 257/704
• CPC Class Codes: B81B 3/0018 Structures acting upon the moving or flexible element for transforming energy into mechanical movement or vice versa, i.e. actuators, sensors, generators
• CPC Class Codes: B81B 3/0059 Constitution or structural means for controlling the movement not provided for in groups B81B3/0037 - B81B3/0056
• CPC Class Codes: B81B 3/0067 Mechanical properties
• CPC Class Codes: B81B 7/0032 Packages or encapsulation processes for packaging MEMS B81C1/00261; packaging of smart-MEMS B81C1/0023
• CPC Class Codes: B81B 7/0041 maintaining a controlled atmosphere with techniques not provided for in B81B7/0038
• CPC Class Codes: B81B 7/02 containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS] B81B7/04 takes precedence
• CPC Class Codes: B81C 1/00158 Diaphragms, membranes manufacture process for semi-permeable inorganic membranes B01D67/0039
• CPC Class Codes: B81C 1/00293 maintaining a controlled atmosphere with processes not provided for in B81C1/00285
• CPC Class Codes: B81C 2203/0145 Hermetically sealing an opening in the lid
• CPC Class Codes: H01L 29/84 controllable by variation of applied mechanical force, e.g. of pressure

Abstract

The present disclosure relates to a method of forming a plurality of MEMs device having a plurality of cavities with different pressures on a wafer package system, and an associated apparatus. In some embodiments, the method is performed by providing a work-piece having a plurality of microelectromechanical system (MEMs) devices. A cap wafer is bonded onto the work-piece in a first ambient environment having a first pressure. The bonding forms a plurality of cavities abutting the plurality of MEMs devices, which are held at the first pressure. One or more openings are formed in one or more of the plurality of cavities leading to a gas flow path that could be held at a pressure level different from the first pressure. The one or more openings in the one or more of the plurality of cavities are then sealed in a different ambient environment having a different pressure, thereby causing the one or more of the plurality of cavities to be held at the different pressure.

Claims

1. A wafer level packaging (WLP) structure comprising:

a work-piece including a silicon region and including first and second micro-electromechanical system (MEMs) devices thereon;

first and second cavities-disposed at least partially in the silicon region of the work-piece, and fluidly coupled to the first and second MEMs devices, respectively, wherein the first cavity retains a first pressure level and the second cavity retains a different second pressure level;

a cap work-piece over the work-piece;

a gas flow path that couples the second cavity to an opening in the cap work-piece;

a sealant in the opening in the cap work-piece and sealing the gas flow path from an ambient environment external to the WLP structure; and

a sealing residue that resides at a bottom surface of the second cavity.

3. The WLP structure of claim 1, wherein the work-piece comprises a carrier work-piece and a MEMs work-piece overlaying the carrier work-piece.

4. The WLP structure of claim 3, wherein the carrier work-piece comprises one or more carrier work-piece holes with corresponding carrier work-piece paths in communication with the second cavity.

5. The WLP structure of claim 3, wherein the MEMs work-piece comprises a MEMs semiconductor substrate layer and a MEMs oxide layer, and wherein the oxide layer is between the MEMs semiconductor substrate layer and the carrier work-piece.

6. The WLP structure of claim 1, wherein the cap work-piece and the work-piece are connected through eutectic bonds.

7. The WLP structure of claim 1, wherein the first pressure level comprises bonding pressure and the second pressure level comprises sealing pressure.

8. The WLP structure of claim 1, wherein the first MEMs device comprises an accelerometer or a magnetic sensor and the second MEMs device comprises a gyroscope, a magnetic sensor or an RF resonator.

2. (canceled)

9-20. -20. (canceled)

21. A wafer level packaging (WLP) structure, comprising:

a MEMs work-piece including a first MEMs device, a second MEMs device and a fluid path adjacent the second MEMs device;

a carrier work-piece disposed under the MEMs work-piece, the carrier work-piece including a carrier work-piece fluid channel adjoining the fluid path and extending downward from an upper surface of the carrier work-piece to a carrier work-piece cavity within the carrier work-piece, wherein the carrier work-piece fluid channel has a first width that is less than a second width of the carrier work-piece cavity;

a cap work-piece bonded to an upper surface of the MEMs work-piece to create a first cavity and a second cavity between the cap and MEMs work-pieces, wherein the first cavity is in fluid communication with the first MEMs device and the second cavity is in fluid communication with both the second MEMs device and the fluid path;

a hole in the cap work-piece that opens to the fluid path; and

a sealing layer over the cap work-piece to cover the hole and seal the fluid path from an ambient environment external to the wafer package system.

22. The WLP structure of claim 21, wherein the first cavity comprises a first pressure level and the second cavity comprises a second different pressure level.

23. The WLP structure of claim 21, wherein the MEMs work-piece comprises a MEMs oxide layer and a MEMs substrate.

24. The WLP structure of claim 23, wherein the MEMs oxide layer and the carrier work-piece are bonded by fusion bonding.

25. The WLP structure of claim 21, wherein the cap work-piece and the MEMs substrate are bonded by eutectic bonding.

26. The WLP structure of claim 21, further comprising, a sealing residue which resides at a bottom surface of the carrier work-piece hole, directly under the hole in the cap work-piece.

27. The WLP structure of claim 21, wherein the carrier work-piece comprises more than two carrier work-piece cavities, wherein two or more of the carrier work-piece cavities are held at a same pressure.

33. The WLP structure of claim 23, wherein the third carrier work-piece fluid channel has an upper surface that abuts the MEMs oxide layer.

28. A wafer level packaging (WLP) structure comprising:

a MEMs work-piece including a first MEMs device, a second MEMs device, and a fluid path in fluid communication with the second MEMs device;

a carrier work-piece disposed under the MEMs work-piece, the carrier work-piece including a carrier work-piece fluid channel adjoining the fluid path and extending downward from an upper surface of the carrier work-piece to a carrier workpiece cavity within the carrier work-piece, wherein the carrier workpiece fluid channel has a first width and the carrier work-piece cavity has a second width which is greater than the first width;

a first cavity which is in fluid communication with the first MEMs device and a second cavity which is in fluid communication with the second MEMs device, wherein the first cavity retains a first pressure level and the second cavity retains a different second pressure level;

a cap work-piece disposed over the MEMs work-piece and coupled to the MEMs workpiece through eutectic bonding;

a hole in the cap work-piece that opens to one of the fluid paths in the MEMs work-piece;

a sealing layer over the cap work-piece to cover the hole and seal the one of the fluid paths from an ambient environment external to the wafer package system.

29. The WLP structure of claim 28, wherein the cap work-piece comprises Ge (germanium) contacts and the MEMs work-piece comprises Al (aluminum) contacts.

30. The WLP structure of claim 28, wherein the sealing layer comprises a metal.

31. The WLP structure of claim 28, wherein the first MEMs device comprises an accelerometer or a magnetic sensor and the second MEMs device comprises a gyroscope, a magnetic sensor or an RF resonator.

32. The WLP structure of claim 28, further comprising, a sealing residue which resides at a bottom surface of the carrier work-piece hole, directly under the hole in the cap work-piece.