INJECTION LOCKED OSCILLATOR

• US 20150091658A1
• Filed: 02/24/2014
• Published: 04/02/2015
• Est. Priority Date: 03/05/2013
• Status: Active Grant

• Current Assignee: Panasonic Corporation (Panasonic Holdings Corporation)
• Original Assignee: Panasonic Corporation (Panasonic Holdings Corporation)
• Inventors: Shima, Takahiro, Komori, Hiroshi, Watanabe, Takeaki
• Granted Patent: US 9,276,593 B2
• Time in Patent Office: Days
• US Class Current: 331/8
• CPC Class Codes: H03K 3/0315 Ring oscillators
• CPC Class Codes: H03L 7/085 concerning mainly the frequency- or phase-detection arrangement including the filtering or amplification of its output signal H03L7/10 takes precedence; circuits for comparing the phase or frequency of two mutually-independent oscillations H03D13/00
• CPC Class Codes: H03L 7/0995 the oscillator comprising a ring oscillator
• CPC Class Codes: H03L 7/24 using a reference signal directly applied to the generator

Abstract

An injection locked frequency divider includes a ring oscillator, an input terminal, an output terminal and a control voltage terminal. The ring oscillator has a three-stage cascade connection of a first amplification circuit including an N-channel MOS type transistor and P-channel MOS type transistors, a second amplification circuit configured in the same manner as the first amplification circuit and a third amplification circuit configured likewise. A high frequency signal is input to a gate terminal of each P-channel MOS type transistor. A predetermined DC control voltage is supplied to a gate terminal of each P-channel MOS type transistor.

Claims

1. An injection locked oscillator comprising:

a ring oscillator including a cascade connection of (2n+1) stages (n is an integer of 1 or more) of amplification circuits each having an N-channel MOS type transistor, a first P-channel MOS type transistor and a second P-channel MOS type transistor,

wherein a high frequency signal is input to a gate terminal of the first P-channel MOS type transistor in each of the (2n+1) amplification circuits; and

wherein a predetermined DC control voltage is supplied to a gate terminal of the second P-channel MOS type transistor in each of the (2n+1) amplification circuits.

2. The injection locked oscillator according to claim 1, further comprising:

switches which are provided for the amplification circuits respectively so that the predetermined DC control voltage to be input to the gate terminal of the second P-channel MOS type transistor in each of the amplification circuits is switched to the high frequency signal and the high frequency signal is supplied thereto in accordance with the amplitude of the high frequency signal.

5. The injection locked oscillator according to claim 1, wherein an injection signal whose frequency is m(2n+1) (m is an integer of 1 or more) times or (2n+1)/m times as high as an oscillation frequency of the ring oscillator is input to the gate terminal of each of the first P-channel MOS type transistors in the (2n+1) amplification circuits.

3. An injection locked oscillator comprising:

a ring oscillator including a cascade connection of (2n+1) stages (n is an integer of 1 or more) of amplification circuits each having an N-channel MOS type transistor and a P-channel MOS type transistor;

a first N-channel MOS type transistor which is connected to the N-channel MOS type transistor in each of the (2n+1) amplification circuits; and

a second N-channel MOS type transistor which is connected to the N-channel MOS type transistor in each of the (2n+1) amplification circuits;

wherein a high frequency signal is input to a gate terminal of the first N-channel MOS type transistor; and

wherein a predetermined DC control voltage is supplied to a gate terminal of the second N-channel MOS type transistor.

4. The injection locked oscillator according to claim 3, further comprising:

a switch by which the predetermined DC control voltage to be input to the gate terminal of the second N-channel MOS type transistor is switched to the high frequency signal and the high frequency signal is supplied thereto in accordance with the amplitude of the high frequency signal.

6. The injection locked oscillator according to claim 3, wherein an injection signal whose frequency is m(2n+1) (m is an integer of 1 or more) times or (2n+1)/m times as high as an oscillation frequency of the ring oscillator is input to the gate terminal of the first N-channel MOS type transistor.