CMOS IMAGE SENSOR SYSTEM AND METHOD THEREOF

• US 20150092086A1
• Filed: 06/17/2014
• Published: 04/02/2015
• Est. Priority Date: 07/29/2013
• Status: Abandoned Application

• Current Assignee: UCHANGE　TECHNOLOGY　CO.,　LTD.
• Original Assignee: Uchange Technology Company Limited
• Inventors: CHANG, Chih-Tsung, SIE, Jyun-Jie
• Application Number:
  US14/306,230
• Publication Number:
  US 20150092086A1
• Time in Patent Office: Days
• US Class Current: 348/241
• CPC Class Codes: H04N 25/60 Noise processing, e.g. detecting, correcting, reducing or removing noise
• CPC Class Codes: H04N 25/75 Circuitry for providing, modifying or processing image signals from the pixel array
• CPC Class Codes: H04N 25/76 Addressed sensors, e.g. MOS or CMOS sensors

Abstract

A complementary metal-oxide semiconductor (CMOS) image sensor system and method thereof produce a control signal to make a input terminal repeatedly switch between high potential and low potential, thereby modulating image signals at a specific frequency to prevent image quality from being affected by direct current (DC) voltage variations. The mechanism thus helps improving the image quality.

Claims

1. A complementary metal-oxide semiconductor (CMOS) image sensor system, comprising:

a controlling unit for generating a control signal for a input terminal to repeatedly switch between a high potential and a low potential;

a sensor array consisting of at least one active pixel sensor unit, each of which generates a direct current (DC) signal and an alternating current (AC) signal according to the high/low potential of the input terminal after detecting light and generating charges, the DC signal and the AC signal being output to a column output; and

a signal processing module electrically connected with the sensor array for filtering out the DC signal and receiving only the AC signal from the column output to avoid DC voltage variations and noise interference, and for processing the AC signal to generate an image signal.

2. The CMOS image sensor system of claim 1, wherein the signal processing module further includes:

a high-pass filter electrically connected with the column output for allowing the AC signal of the column output to pass;

an amplifier electrically connected with the high-pass filter for amplifying the AC signal passing through the high-pass filter;

a demodulator electrically connected with the amplifier for demodulating the amplified AC signal; and

a low-pass filter electrically connected with the demodulator for smoothing the demodulated AC signal and outputting the final signal.

3. The CMOS image sensor system of claim 1, wherein the signal processing module further includes:

a high-pass filter electrically connected with the column output for allowing the AC signal of the column output to pass;

an amplifier electrically connected with the high-pass filter for amplifying the AC signal passing through the high-pass filter;

a rectifier electrically connected with the amplifier for performing half or full wave rectification on the amplified AC signal; and

a low-pass filter electrically connected with the demodulator for smoothing the demodulated AC signal and outputting the final signal.

4. The CMOS image sensor system of claim 1, wherein when the input terminal repeatedly switch between high and low potentials the image signal is modulated at a specific frequency that allows to be adjusted.

5. The CMOS image sensor system of claim 4, wherein the specific frequency is an AC signal resistant from noise interference.

6. The CMOS image sensor system of claim 1, wherein when the input terminal repeatedly switch between high and low potentials the image signal is modulated at a specific frequency whose duty cycle changes with light intensity detected by the sensor array, with the light intensity becomes stronger as the duty cycle being longer or, conversely, the light intensity becomes weaker as the duty cycle being shorter.

7. The CMOS image sensor system of claim 6, wherein the specific frequency is an AC signal resistant from noise interference.

8. A CMOS image sensor method, comprising the steps of:

generating a control signal for a input terminal to repeatedly switch between a high potential and a low potential;

generating a DC signal and an AC signal according to the high/low potential of the input terminal after detecting light and generating charges, and outputting the DC signal and the AC signal to a column output; and

filtering out the DC signal and receiving only the AC signal from the column output to avoid DC voltage variations and noise interference, and processing the AC signal to generate an image signal.

9. The CMOS image sensor method of claim 8, wherein the step of processing the AC signal further includes the steps of:

allowing the AC signal from the column output to pass;

amplifying the passed AC signal;

performing half or full wave rectification or signal demodulation on the amplified AC signal; and

smoothing the AC signal after half or full wave rectification or signal demodulation and outputting the resulting signal.

10. The CMOS image sensor method of claim 8, wherein when the input terminal repeatedly switch between high and low potentials the image signal is modulated at a specific frequency that allows to be adjusted.

11. The CMOS image sensor method of claim 10, wherein the specific frequency is an AC signal resistant from noise interference.

12. The CMOS image sensor method of claim 8, wherein when the input terminal repeatedly switch between high and low potentials the image signal is modulated at a specific frequency whose duty cycle changes with light intensity detected by the sensor array, with the light intensity becomes stronger as the duty cycle being longer or, conversely, the light intensity becomes weaker as the duty cycle being shorter.

13. The CMOS image sensor method of claim 12, wherein the specific frequency is an AC signal resistant from noise interference.