COBALT METAL PRECURSORS
First Claim
1. A method comprising:
- decomposing a metal precursor on an integrated circuit device; and
forming a metal from the metal precursor,wherein the metal precursor is selected from the group consisting of;
(i) a Co2(CO)6(R1C≡
CR2), wherein R1 and R2 are individually selected from a straight or branched monovalent hydrocarbon group have one to six carbon atoms that may be interrupted and substituted;
(ii) a mononuclear cobalt carbonyl nitrosyl;
(iii) a cobalt carbonyl bonded to one of a boron, indium, germanium and tin moiety;
(iv) a cobalt carbonyl bonded to a mononuclear or binuclear allyl; and
(v) a cobalt (II) complex comprising nitrogen-based supporting ligands selected from the group consisting of;
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Accused Products
Abstract
A metal precursor and a method comprising decomposing a metal precursor on an integrated circuit device; and forming a metal from the metal precursor, wherein the metal precursor is selected from the group consisting of (i) a Co2(CO)6(R1C≡CR2), wherein R1 and R2 are individually selected from a straight or branched monovalent hydrocarbon group have one to six carbon atoms that may be interrupted and substituted; (ii) a mononuclear cobalt carbonyl nitrosyl; (iii) a cobalt carbonyl bonded to one of a boron, indium, germanium and tin moiety; (iv) a cobalt carbonyl bonded to a mononuclear or binuclear allyl; and (v) a cobalt (II) complex comprising nitrogen-based supporting ligands.
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Citations
20 Claims
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1. A method comprising:
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decomposing a metal precursor on an integrated circuit device; and forming a metal from the metal precursor, wherein the metal precursor is selected from the group consisting of; (i) a Co2(CO)6(R1C≡
CR2), wherein R1 and R2 are individually selected from a straight or branched monovalent hydrocarbon group have one to six carbon atoms that may be interrupted and substituted;(ii) a mononuclear cobalt carbonyl nitrosyl; (iii) a cobalt carbonyl bonded to one of a boron, indium, germanium and tin moiety; (iv) a cobalt carbonyl bonded to a mononuclear or binuclear allyl; and (v) a cobalt (II) complex comprising nitrogen-based supporting ligands selected from the group consisting of; - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A method comprising:
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loading an integrated circuit device in a deposition chamber; depositing a transition metal precursor on the integrated circuit device; and decomposing the transition metal precursor with a coreactant; wherein the transition metal precursor is selected from the group consisting of; (i) a Co2(CO)6(R1C≡
CR2), wherein R1 and R2 are individually selected from a straight or branched monovalent hydrocarbon group have one to six carbon atoms;(ii) a mononuclear cobalt carbonyl nitrosyl; (iii) a cobalt carbonyl bonded to one of a boron, indium, germanium and tin moiety; (iv) a cobalt carbonyl bonded to a mononuclear or binuclear allyl; and (v) a cobalt (II) complex comprising nitrogen-based supporting ligands selected from the group consisting of; - View Dependent Claims (9, 10, 11, 12, 13, 14)
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15. A metal precursor selected from the group consisting of:
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(i) a Co2(CO)6(R1C≡
CR2), wherein R1 and R2 are individually selected from a straight or branched monovalent hydrocarbon group have one to six carbon atoms that may be interrupted and substituted;(ii) a mononuclear cobalt carbonyl nitrosyl; (iii) a cobalt carbonyl bonded to one of a boron, indium, germanium and tin moiety; (iv) a cobalt carbonyl bonded to a mononuclear or binuclear allyl; and (v) a cobalt (II) complex comprising nitrogen-based supporting ligands selected from the group consisting of; - View Dependent Claims (16, 17, 18, 19, 20)
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Specification