COBALT METAL PRECURSORS

• US 20150093890A1
• Filed: 09/27/2013
• Published: 04/02/2015
• Est. Priority Date: 09/27/2013
• Status: Active Grant

• Current Assignee: Intel Corporation
• Original Assignee: Intel Corporation
• Inventors: Blackwell, James M., Clendenning, Scott B., Plombon, John J., Romero, Patricio E.
• Granted Patent: US 9,385,033 B2
• Time in Patent Office: Days
• US Class Current: 438/602
• CPC Class Codes: C07F 15/06 Cobalt compounds
• CPC Class Codes: C23C 16/06 characterised by the deposition of metallic material
• CPC Class Codes: C23C 16/16 from metal carbonyl compounds
• CPC Class Codes: C23C 16/18 from metallo-organic compounds
• CPC Class Codes: C23C 16/45553 characterized by the use of precursors specially adapted for ALD
• CPC Class Codes: H01L 21/28556 by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD H01L21/28518 - H01L21/28537 and H01L21/28568 take precedence
• CPC Class Codes: H01L 21/28562 Selective deposition
• CPC Class Codes: H01L 21/76843 formed in openings in a dielectric
• CPC Class Codes: H01L 21/76898 formed through a semiconductor substrate

Abstract

A metal precursor and a method comprising decomposing a metal precursor on an integrated circuit device; and forming a metal from the metal precursor, wherein the metal precursor is selected from the group consisting of (i) a Co₂(CO)₆(R¹C≡CR²), wherein R¹ and R² are individually selected from a straight or branched monovalent hydrocarbon group have one to six carbon atoms that may be interrupted and substituted; (ii) a mononuclear cobalt carbonyl nitrosyl; (iii) a cobalt carbonyl bonded to one of a boron, indium, germanium and tin moiety; (iv) a cobalt carbonyl bonded to a mononuclear or binuclear allyl; and (v) a cobalt (II) complex comprising nitrogen-based supporting ligands.

Claims

1. A method comprising:

decomposing a metal precursor on an integrated circuit device; and

forming a metal from the metal precursor,

wherein the metal precursor is selected from the group consisting of;

(i) a Co₂(CO)₆(R¹C≡

CR²), wherein R¹ and R² are individually selected from a straight or branched monovalent hydrocarbon group have one to six carbon atoms that may be interrupted and substituted;

(ii) a mononuclear cobalt carbonyl nitrosyl;

(iii) a cobalt carbonyl bonded to one of a boron, indium, germanium and tin moiety;

(iv) a cobalt carbonyl bonded to a mononuclear or binuclear allyl; and

(v) a cobalt (II) complex comprising nitrogen-based supporting ligands selected from the group consisting of;

2. The method of claim 1, wherein the transition metal precursor is a Co₂(CO)₆(R¹C≡

CR²) and R¹ and R² are independently selected from a straight or branched chain alkyl having one to the three carbon atoms.

3. The method of claim 2, wherein the transition metal precursor is selected from the group consisting of:

4. The method of claim 1, wherein the metal precursor comprises a a mononuclear cobalt carbonyl nitrosyl selected from the group consisting of:

5. The method of claim 1, wherein the metal precursor is selected from the group consisting of:

6. The method of claim 1, wherein the metal precursor is selected from the group consisting of:

7. The method of claim 1, wherein forming the metal comprises combining the precursor with a coreactant.

8. A method comprising:

loading an integrated circuit device in a deposition chamber;

depositing a transition metal precursor on the integrated circuit device; and

decomposing the transition metal precursor with a coreactant;

wherein the transition metal precursor is selected from the group consisting of;

(i) a Co₂(CO)₆(R¹C≡

CR²), wherein R¹ and R² are individually selected from a straight or branched monovalent hydrocarbon group have one to six carbon atoms;

(ii) a mononuclear cobalt carbonyl nitrosyl;

(iii) a cobalt carbonyl bonded to one of a boron, indium, germanium and tin moiety;

(iv) a cobalt carbonyl bonded to a mononuclear or binuclear allyl; and

(v) a cobalt (II) complex comprising nitrogen-based supporting ligands selected from the group consisting of;

9. The method of claim 8, wherein the transition metal precursor is a Co₂(CO)₆(R¹C≡

CR²) and R¹ and R² are independently selected from a straight or branched chain alkyl having one to the three carbon atoms.

10. The method of claim 9, wherein the transition metal precursor is selected from the group consisting of:

11. The method of claim 8, wherein the metal precursor comprises a mononuclear cobalt carbonyl nitrosyl selected from the group consisting of:

12. The method of claim 8, wherein the metal precursor is selected from the group consisting of:

13. The method of claim 8, wherein the metal precursor is selected from the group consisting of:

14. The method of claim 8, wherein the coreactant is selected from the group consisting of a hydrogen gas or plasma, an ammonia gas or plasma, a hydrazine, a borane, an alane and a silane.

15. A metal precursor selected from the group consisting of:

(i) a Co₂(CO)₆(R¹C≡

CR²), wherein R¹ and R² are individually selected from a straight or branched monovalent hydrocarbon group have one to six carbon atoms that may be interrupted and substituted;

(ii) a mononuclear cobalt carbonyl nitrosyl;

(iii) a cobalt carbonyl bonded to one of a boron, indium, germanium and tin moiety;

(iv) a cobalt carbonyl bonded to a mononuclear or binuclear allyl; and

(v) a cobalt (II) complex comprising nitrogen-based supporting ligands selected from the group consisting of;

16. The metal precursor of claim 15, wherein the transition metal precursor is a Co₂(CO)₆(R¹C≡

CR²) and R¹ and R² are independently selected from a straight or branched chain alkyl having one to the three carbon atoms.

17. The metal precursor of claim 16, wherein the transition metal precursor is selected from the group consisting of:

18. The metal precursor of claim 15, wherein the metal precursor comprises a a mononuclear cobalt carbonyl nitrosyl selected from the group consisting of:

19. The metal precursor of claim 15, wherein the metal precursor is selected from the group consisting of:

20. The metal precursor of claim 15, wherein the metal precursor is selected from the group consisting of: