SEMICONDUCTOR DEVICE, DISPLAY, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

• US 20150097163A1
• Filed: 04/15/2013
• Published: 04/09/2015
• Est. Priority Date: 04/26/2012
• Status: Abandoned Application

• Current Assignee: JOLED Inc.
• Original Assignee: Sony Corporation (Sony Group Corp.)
• Inventors: Kanno, Michihiro, Kawamura, Takahiro, Inamura, Hiroshi
• Application Number:
  US14/395,676
• Publication Number:
  US 20150097163A1
• Time in Patent Office: Days
• US Class Current: 257/40
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 27/1259 Multistep manufacturing methods
• CPC Class Codes: H01L 29/42384 for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
• CPC Class Codes: H01L 29/4908 for thin film semiconductor, e.g. gate of TFT
• CPC Class Codes: H01L 29/66765 Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
• CPC Class Codes: H01L 29/78678 with inverted-type structure, e.g. with bottom gate
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: H10K 10/466 Lateral bottom-gate IGFETs comprising only a single gate
• CPC Class Codes: H10K 19/10 comprising field-effect transistors

Abstract

A semiconductor device includes: a gate electrode layer; a gate insulating film provided on the gate electrode layer; a semiconductor layer provided, in opposition to the gate electrode layer, on the gate insulating film; and a source-drain electrode layer provided on the semiconductor layer and on the gate insulating film. A face, in opposition to the gate insulating film, of the semiconductor layer is located above a face of a section, located on the gate insulating film, of the source-drain electrode layer.

Claims

1. A semiconductor device, comprising:

a gate electrode layer;

a gate insulating film provided on the gate electrode layer;

a semiconductor layer provided, in opposition to the gate electrode layer, on the gate insulating film; and

a source-drain electrode layer provided on the semiconductor layer and on the gate insulating film,

wherein a face, in opposition to the gate insulating film, of the semiconductor layer is located above a face of a section, located on the gate insulating film, of the source-drain electrode layer.

2. The semiconductor device according to claim 1, further comprising a raised section where the semiconductor layer is provided, the raised section being provided in a region, in opposition to the gate electrode layer, on the gate insulating film.

3. The semiconductor device according to claim 2, wherein the raised section includes a stepped section that is dug-down and provided at a drain-side section or at both of a source-side section and the drain-side section of the gate insulating film, the source-side section and the drain-side section being adjacent to the region, of the gate insulating film, in which the semiconductor layer is provided.

4. The semiconductor device according to claim 1, further comprising an insulating film provided on the gate insulating film,

wherein the semiconductor layer is provided in a region, in opposition to the gate electrode layer, of the insulating film, and

a drain-side section or both of a source-side section and the drain-side section of the insulating film is removed, the source-side section and the drain-side section being adjacent to the region, of the insulating film, in which the semiconductor layer is provided.

5. The semiconductor device according to claim 4, wherein the insulating film has a dielectric constant higher than a dielectric constant of the gate insulating film.

6. The semiconductor device according to claim 1, wherein the gate electrode layer has a size that covers, in plan view, the semiconductor layer.

7. The semiconductor device according to claim 1, further comprising a protecting film provided on the semiconductor layer,

wherein the source-drain electrode layer is provided on the protecting film.

8. The semiconductor device according to claim 1, wherein the semiconductor layer includes an organic semiconductor.

9. The semiconductor device according to claim 1, wherein the semiconductor layer includes an oxide semiconductor.

10. A display provided with a semiconductor device, the semiconductor device comprising:

a gate electrode layer;

a gate insulating film provided on the gate electrode layer;

a semiconductor layer provided, in opposition to the gate electrode layer, on the gate insulating film; and

a source-drain electrode layer provided on the semiconductor layer and on the gate insulating film,

wherein a face, in opposition to the gate insulating film, of the semiconductor layer is located above a face of a section, located on the gate insulating film, of the source-drain electrode layer.

11. A method of manufacturing a semiconductor device, the method comprising:

forming a gate insulating film on a gate electrode layer;

forming, in opposition to the gate electrode layer, a semiconductor layer on the gate insulating film; and

forming a source-drain electrode layer on the semiconductor layer and on the gate insulating film,

wherein a face, in opposition to the gate insulating film, of the semiconductor layer is located above a face of a section, located on the gate insulating film, of the source-drain electrode layer.