ORGANIC LIGHT-EMITTING DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME

• US 20150097171A1
• Filed: 09/24/2014
• Published: 04/09/2015
• Est. Priority Date: 10/08/2013
• Status: Active Grant

• Current Assignee: LG Display Co., Ltd.
• Original Assignee: LG Display Co., Ltd.
• Inventors: KIM, Binn, LEE, BuYeol
• Granted Patent: US 10,026,790 B2
• Time in Patent Office: Days
• US Class Current: 257/40
• CPC Class Codes: H10K 2102/3026 Top emission
• CPC Class Codes: H10K 50/824 combined with auxiliary electrodes
• CPC Class Codes: H10K 50/828 Transparent cathodes, e.g. comprising thin metal layers
• CPC Class Codes: H10K 59/121 characterised by the geometry or disposition of pixel elements
• CPC Class Codes: H10K 59/122 Pixel-defining structures or layers, e.g. banks

Abstract

An organic light-emitting display device according to one embodiment of the present disclosure includes a substrate, a thin-film transistor formed on the substrate, a planarization layer formed on the thin-film transistor, an organic light-emitting element formed on the planarization layer, the emitting element including an organic light-emitting layer and a cathode, and a lower auxiliary wiring between the organic light-emitting element and the planarization layer, the wiring electrically connected with the cathode.

Claims

1. An organic light-emitting display device comprising:

a thin-film transistor formed on a substrate;

a planarization layer on the thin-film transistor;

an organic light-emitting element on the planarization layer, the organic light-emitting element including an anode, an organic light-emitting layer, and a cathode; and

a lower auxiliary wiring electrically connected to the cathode, wherein the lower auxiliary wiring is disposed between the organic light-emitting element and the planarization layer.

2. The organic light-emitting display device according to claim 1, further comprising:

an additional insulating layer between the lower auxiliary wiring and the organic light-emitting element.

3. The organic light-emitting display device according to claim 2, further comprising:

an upper auxiliary wiring on the additional insulating layer electrically connected to the lower auxiliary wiring and the cathode.

4. The organic light-emitting display device according to claim 3, wherein the upper auxiliary wiring is on a same plane with the anode.

5. The organic light-emitting display device according to claim 1, further comprising:

a connection member on the planarization layer electrically connected to the thin-film transistor and the anode.

6. The organic light-emitting display device according to claim 5, wherein the connection member is on a same plane with the lower auxiliary wiring.

7. The organic light-emitting display device according to claim 1, wherein the organic light-emitting display device includes a light-emitting area that overlaps with the lower auxiliary wiring.

8. The organic light-emitting display device according to claim 7, further comprising:

bank layers on the anode defining the light-emitting area.

9. The organic light-emitting display device according to claim 8, wherein the thin-film transistor is electrically connected to the anode via a contact-hole of the planarization layer, and one of the bank layers covers the contact-hole.

10. The organic light-emitting display device according to claim 7, wherein the lower auxiliary wiring is not formed in a light-transmitting area.

11. The organic light-emitting display device according to claim 1, wherein the organic light-emitting element emits light through the cathode.

12. The organic light-emitting display device according to claim 1, further comprising:

a transparent conductive layer on the cathode, the transparent conductive layer being in contact with the lower auxiliary wiring and the cathode.

13. The organic light-emitting display device according to claim 1, wherein the lower auxiliary wiring is on a top surface of the planarization layer such that the lower auxiliary wiring is planar.

14. An organic light-emitting display device comprising:

a thin-film transistor on a substrate;

a planarization layer on the thin-film transistor;

an organic light-emitting element on the planarization layer, the organic light-emitting element including an anode, an organic light-emitting layer, and a cathode; and

an auxiliary wiring between the planarization layer and the anode of organic light-emitting element, the auxiliary wiring being electrically connected to the cathode,

wherein the planarization layer has a thickness such that a parasitic capacitance between the thin-film transistor and the auxiliary wiring is 0.1 fF or less per unit area.

15. The organic light-emitting display device according to claim 14, wherein the auxiliary wiring is configured to allow the parasitic capacitance generated between the auxiliary wiring and the thin-film transistor to be lower than a parasitic capacitance of a structure having the auxiliary wiring formed under the top surface of the planarization layer.

16. An organic light-emitting display device comprising:

a planarization layer on a substrate;

an organic light-emitting element on the planarization layer; and

an auxiliary wiring between the planarization layer and the organic light-emitting element;

wherein the auxiliary wirings are periodically arranged across the substrate.

17. The organic light-emitting display device according to claim 16, wherein the auxiliary wirings are periodically arranged such that the auxiliary wirings are disposed in each nth pixel, where n is an integer equal or larger than 1.

18. The organic light-emitting display device according to claim 16, wherein a distance between two adjacent lower auxiliary wirings located in a central portion of the organic light-emitting display is lower than a distance between two adjacent lower auxiliary wirings positioned in a peripheral portion of the organic light-emitting display device.

19. A method for manufacturing an organic light-emitting display device, comprising:

forming a thin-film transistor on a substrate;

forming a planarization layer on the thin-film transistor;

forming a lower auxiliary wiring on the planarization layer;

forming an additional insulating layer on the lower auxiliary wiring;

forming an anode on the additional insulating layer;

forming bank layers on the anode, the bank layers defining a light-emitting area that overlaps the lower auxiliary wiring; and

forming an organic light-emitting layer and a cathode on the anode.

20. The method according to claim 19, further comprising;

forming an upper auxiliary wiring electrically connecting the lower auxiliary wiring and the cathode, wherein the upper auxiliary wiring is formed simultaneously with the anode.

21. The method according to claim 19, further comprising:

forming a connection member electrically connecting a source or a drain electrode of the thin-film transistor and anode, wherein the connection member is formed simultaneously with the lower auxiliary wiring.