INTERCONNECTS HAVING SEALING STRUCTURES TO ENABLE SELECTIVE METAL CAPPING LAYERS
First Claim
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1. A method of fabricating an interconnect structure, comprising:
- providing an interconnect including a conductive material extending into a dielectric material layer;
forming capping layer proximate said interconnect; and
forming a sealing structure to seal at least one gap of exposed interconnect conductive material between said capping layer and said dielectric layer.
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Abstract
Methods of fabricating a capped interconnect for a microelectronic device which includes a sealing feature for any gaps between a capping layer and an interconnect and structures formed therefrom. The sealing features improve encapsulation of the interconnect, which substantially reduces or prevents electromigration and/or diffusion of conductive material from the capped interconnect.
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Citations
11 Claims
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1. A method of fabricating an interconnect structure, comprising:
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providing an interconnect including a conductive material extending into a dielectric material layer; forming capping layer proximate said interconnect; and forming a sealing structure to seal at least one gap of exposed interconnect conductive material between said capping layer and said dielectric layer. - View Dependent Claims (2, 3, 4, 5, 8)
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6. An apparatus comprising:
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an interconnect including a conductive material extending into a dielectric material layer; a capping layer proximate the interconnect; and a sealing structure adapted to seal at least one gap of exposed interconnect conductive material between the capping layer and the dielectric layer by exposing the exposed interconnect conductive material to silane to form a first salicide layer and exposing the first salicide layer to an ammonia source to form a silicon nitride layer. - View Dependent Claims (7)
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9. A method of fabricating an interconnect structure, comprising:
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providing a dielectric material layer; forming an opening within said dielectric material layer; forming a barrier material layer on at least one sidewall and bottom of said opening; disposing a conductive material within said opening and abutting said barrier material layer; forming capping layer proximate said conductive material; and forming a sealing structure to seal at least one gap of exposed conductive material between said capping layer and said dielectric layer. - View Dependent Claims (10, 11)
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Specification