Semiconductor Device
First Claim
1. A semiconductor device comprising a transistor in a semiconductor substrate including a main surface, the transistor comprising:
- a source region;
a drain region;
a channel region; and
a gate electrode, the source region and the drain region being disposed along a first direction, the first direction being parallel to the main surface, the channel region being disposed between the source region and the drain region, the channel region patterned into a ridge extending along the first direction by adjacent trenches extending in the first direction in the semiconductor substrate, the gate electrode being disposed in a first of one of the trenches adjacent to the channel region, and the gate electrode being absent from a second one of the trenches adjacent to the channel region.
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Accused Products
Abstract
A semiconductor device includes a transistor formed in a semiconductor substrate including a main surface. The transistor includes a source region, a drain region, a channel region, and a gate electrode. The source region and the drain region are disposed along a first direction, the first direction being parallel to the main surface. The channel region has a shape of a ridge extending along the first direction, the ridge including a top side and a first and a second sidewalls. The gate electrode is disposed at the first sidewall of the channel region, and the gate electrode is absent from the second sidewall of the channel region.
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Citations
23 Claims
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1. A semiconductor device comprising a transistor in a semiconductor substrate including a main surface, the transistor comprising:
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a source region; a drain region; a channel region; and a gate electrode, the source region and the drain region being disposed along a first direction, the first direction being parallel to the main surface, the channel region being disposed between the source region and the drain region, the channel region patterned into a ridge extending along the first direction by adjacent trenches extending in the first direction in the semiconductor substrate, the gate electrode being disposed in a first of one of the trenches adjacent to the channel region, and the gate electrode being absent from a second one of the trenches adjacent to the channel region. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A semiconductor device comprising a transistor formed in a semiconductor substrate comprising a main surface, the transistor comprising:
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a source region; a drain region; a channel region; a gate trench adjacent to a first sidewall of the channel region; a gate conductive material disposed in the gate trench, the gate conductive material being connected to a gate terminal; and a channel separation trench adjacent to a second sidewall of the channel region, the second sidewall facing the first sidewall via the channel region, the channel separation trench being filled with an insulating separation trench filling or having a conductive filling that is disconnected from the gate terminal, wherein the source region and the drain region are disposed along a first direction, the first direction being parallel to the main surface. - View Dependent Claims (13, 14, 15, 16, 17, 18, 19)
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20. A semiconductor device comprising an array of transistors formed in a semiconductor substrate comprising a main surface, the array of transistors comprising:
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a source region; a drain region; a plurality of channel regions; a plurality of trenches adjacent to each of the channel regions, respectively, so that two trenches are adjacent to opposite sides of one of the channel regions, respectively, the plurality of trenches including gate trenches and channel separation trenches; and a gate conductive material connected to a gate terminal, the gate conductive material being disposed in the gate trenches, wherein the source region and the drain region are disposed along a first direction, the first direction being parallel to the main surface, wherein at least one of the trenches is a channel separation trench, the channel separation trench being either filled with a dielectric material or having a conductive filling disconnected from the gate terminal. - View Dependent Claims (21, 22, 23)
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Specification