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Semiconductor Device

  • US 20150102404A1
  • Filed: 10/15/2013
  • Published: 04/16/2015
  • Est. Priority Date: 10/15/2013
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising a transistor in a semiconductor substrate including a main surface, the transistor comprising:

  • a source region;

    a drain region;

    a channel region; and

    a gate electrode, the source region and the drain region being disposed along a first direction, the first direction being parallel to the main surface, the channel region being disposed between the source region and the drain region, the channel region patterned into a ridge extending along the first direction by adjacent trenches extending in the first direction in the semiconductor substrate, the gate electrode being disposed in a first of one of the trenches adjacent to the channel region, and the gate electrode being absent from a second one of the trenches adjacent to the channel region.

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