DYNAMIC BIAS TO IMPROVE SWITCH LINEARITY

• US 20150105032A1
• Filed: 10/15/2013
• Published: 04/16/2015
• Est. Priority Date: 10/15/2013
• Status: Abandoned Application

• Current Assignee: Qualcomm, Inc.
• Original Assignee: Qualcomm, Inc.
• Inventors: ZHANG, Xiangdong, WANG, Xinwei, IMBORNONE, James F.
• Application Number:
  US14/054,634
• Publication Number:
  US 20150105032A1
• Time in Patent Office: Days
• US Class Current: 455/77
• CPC Class Codes: H03K 17/063 in field-effect transistor switches
• CPC Class Codes: H03K 17/102 in field-effect transistor switches
• CPC Class Codes: H03K 17/161 in field-effect transistor switches
• CPC Class Codes: H03K 17/162 without feedback from the output circuit to the control circuit
• CPC Class Codes: H04B 1/40 Circuits

Abstract

Exemplary embodiments are related to a dynamic gate bias for an electronic switch. A device may include a radio-frequency (RF) switch configured to receive an RF signal. The device may further include a bias generator configured to convey a bias signal based on a power level of the RF signal to the RF switch.

Claims

1. A device, comprising:

a radio-frequency (RF) switch configured to receive an RF signal; and

a bias generator configured to convey a bias signal based on a power level of the RF signal to the RF switch.

2. The device of claim 1, the RF switch comprising a plurality of transistors in a series configuration.

3. The device of claim 1, the bias generator comprising one of an envelope detector and a power detector configured to receive the RF signal and generate one of an envelope and an average power level of the RF signal.

4. The device of claim 3, the one of the envelope detector and the power detector configured to generate one of the envelope and the average power level if a power level of the RF signal is above a threshold level.

5. The device of claim 1, the bias generator comprising a rectifier configured to receive the RF signal and generate an envelope of the RF signal.

6. The device of claim 1, the bias generator comprising a DC-to-DC converter configured to receive a control signal for adjusting a voltage level of the bias signal.

7. The device of claim 1, further comprising a voltage supply configured to convey a supply voltage to the bias generator.

8. The device of claim 1, wherein the bias generator is configured to convey the bias signal having a voltage level proportional to a power level of the RF signal.

9. The device of claim 1, wherein the bias generator comprises:

a signal generator for generating one of an envelope and an average power level of the RF signal; and

a summing node for receiving the envelope and a supply voltage and summing one of the envelope and the average power level and the supply voltage to generate the bias signal.

10. The device of claim 1, wherein the bias generator comprises a signal generator configured for:

receiving a supply voltage and a control signal; and

generating the bias signal based on the supply voltage and the control signal.

11. A device, comprising:

a switch coupled to an antenna an configured to receive a radio-frequency (RF) signal; and

a bias generator configured to receive a supply voltage and convey a bias voltage to the RF switch based on an amplitude of the RF signal to operate the switch in a conductive state.

12. The device of claim 11, further comprising a controller configured to determine the amplitude of the RF signal and convey a signal to the bias generator for controlling a voltage level of the bias voltage.

13. The device of claim 11, the bias generator configured to:

convey the bias voltage comprising a sum of the supply voltage and an envelope of the RF signal if the amplitude of the RF signal is substantially equal to or greater than a threshold level; and

convey the bias voltage comprising the supply voltage if the amplitude of the RF signal is substantially less than the threshold level.

14. A method, comprising:

conveying a radio-frequency (RF) signal to an RF switch;

generating a bias signal based on a power level of the RF signal; and

biasing the RF switch with the bias signal.

15. The method of claim 14, wherein conveying a RF signal comprises conveying the RF signal to the RF switch including a plurality of transistors in a series configuration.

16. The method of claim 14, wherein generating a bias signal comprises generating the bias signal with one of an envelope detector and a power detector.

17. The method of claim 14, wherein generating a bias signal comprises detecting one of an envelope and an average power level of the RF signal.

18. The method of claim 14, wherein generating a bias signal comprises generating the bias signal based on each of the RF signal and the supply voltage if a power level of the RF signal is substantially equal to or greater than a threshold value.

19. The method of claim 14, wherein generating a bias signal comprises generating the bias signal based the supply voltage if a power level of the RF signal is substantially less than a threshold value.

20. A method, comprising:

receiving a radio-frequency (RF) signal at a switch; and

receiving a bias voltage at the switch that varies based on one of an envelope of the RF signal and an average power level of the RF signal.

21. The method of claim 20, wherein receiving a bias voltage comprises receiving the bias voltage that varies based on the envelope of the RF signal, wherein the bias voltage is further based on a supply voltage.

22. The method of claim 20, wherein receiving a bias voltage comprises receiving a bias voltage substantially equal to a supply voltage if the power level of the RF signal is below a threshold value.

23. A device, comprising:

means for conveying a radio-frequency (RF) signal to an RF switch;

means for generating a bias signal based on a power level of the RF signal; and

means for biasing the RF switch with the bias signal.

24. The device of claim 23, the means for generating a bias signal comprising means for generating a signal comprising the envelope of the RF signal.

25. The device of claim 23, further comprising means for summing an envelope of the RF signal and the supply voltage to generate the bias signal.