MEMORY DEVICE RETENTION MODE BASED ON ERROR INFORMATION
First Claim
1. A controller for a memory device, comprising:
- a power control section to control power to a memory element of the memory device in an operation mode and in a retention mode;
a monitoring section for receiving and monitoring error information indicative of an error in the memory device; and
a storage section for storing a retention parameter, wherein,the power control section causes an operation voltage to be applied to the memory element in the operation mode, and causes a time-varying voltage to be applied to the memory element in the retention mode,the time-varying voltage changes between a first retention voltage and a second retention voltage, the second retention voltage being less than the first retention voltage, and the first retention voltage being less than the operation voltage,the power control section controls the second retention voltage based on the retention parameter, andthe retention parameter is set based on the error information.
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Accused Products
Abstract
A controller for a memory device has a power control section to control power to a memory element in an operation mode and in a retention mode. A monitoring section receives and monitors error information and a storage section stores a retention parameter. In the operation mode, the power control section causes an operation voltage to be applied to the memory element, and in the retention mode, the power control section causes a time-varying voltage to be applied to the memory. The power control section also causes the voltage across the memory element to change in the retention mode between a first retention voltage and a second retention voltage based on the retention parameter.
16 Citations
20 Claims
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1. A controller for a memory device, comprising:
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a power control section to control power to a memory element of the memory device in an operation mode and in a retention mode; a monitoring section for receiving and monitoring error information indicative of an error in the memory device; and a storage section for storing a retention parameter, wherein, the power control section causes an operation voltage to be applied to the memory element in the operation mode, and causes a time-varying voltage to be applied to the memory element in the retention mode, the time-varying voltage changes between a first retention voltage and a second retention voltage, the second retention voltage being less than the first retention voltage, and the first retention voltage being less than the operation voltage, the power control section controls the second retention voltage based on the retention parameter, and the retention parameter is set based on the error information. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A device, comprising:
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a memory device; and a controller coupled to the memory device, the controller comprising; a power control section to control power to a memory element of the memory device in an operation mode and in a retention mode; a monitoring section for receiving and monitoring error information indicative of an error in the memory device; and a storage section for storing a retention parameter, wherein, the power control section causes an operation voltage to be applied to the memory element in the operation mode, and a time-varying voltage to be applied to the memory element in the retention mode, the power control section causes the time-varying voltage to change between a first retention voltage and a second retention voltage, the second retention voltage being less than the first retention voltage, and the first retention voltage being less than the operation voltage, the power control section controls the second retention voltage based on the retention parameter, which is set based on the error information.
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11. A method of controlling power to memory elements of a memory device, comprising:
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providing an operation voltage to the memory device in an operation mode; providing a time-varying voltage to the memory device in a retention mode; changing the time-varying voltage, based on a retention parameter, between a first retention voltage and a second retention voltage, the second retention voltage being less than the first retention voltage, and the first retention voltage being less than the operation voltage; receiving error information indicative of an error in a memory element of the memory device; and setting the retention parameter based on the error information. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19, 20)
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Specification