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GROWTH OF CUBIC CRYSTALLINE PHASE STRUCURE ON SILICON SUBSTRATES AND DEVICES COMPRISING THE CUBIC CRYSTALLINE PHASE STRUCTURE

  • US 20150108427A1
  • Filed: 03/15/2013
  • Published: 04/23/2015
  • Est. Priority Date: 05/04/2012
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a substrate comprising a groove;

    a buffer layer formed on a surface of the groove, the buffer layer comprising at least one material chosen from AlN, GaN or AlxGa1-xN, where x is between zero and one;

    an epitaxially grown semiconductor material disposed over the buffer layer, at least a portion of the epitaxially grown semiconductor material having a cubic crystalline phase structure.

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