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  • US 20150108430A1
  • Filed: 01/06/2015
  • Published: 04/23/2015
  • Est. Priority Date: 03/13/2013
  • Status: Active Grant
First Claim
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1. A transistor device comprising:

  • a substrate having a first region and a second region;

    a first semiconductor layer of a first semiconductor material having a first portion over the first region and a second portion over the second region, the first portion being separated from the second portion;

    a second semiconductor layer of a second semiconductor material over the second portion of the first semiconductor layer;

    a first transistor of a first conductivity type, the first transistor disposed within the first region and having a first set of source/drain regions formed in the first semiconductor layer; and

    a second transistor of a second conductivity type, the second transistor disposed within the second region and having a second set of source/drain regions formed in the second semiconductor layer;

    wherein the second conductivity type is different than the second conductivity type, and the second semiconductor material is different from the first semiconductor material.

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