SEMICONDUCTOR DEVICE AND DISPLAY DEVICE

• US 20150108467A1
• Filed: 12/15/2011
• Published: 04/23/2015
• Est. Priority Date: 12/20/2010
• Status: Abandoned Application

• Current Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.)
• Original Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.)
• Inventors: Moriguchi, Masao, Kanzaki, Yohsuke, Takanishi, Yudai, Kusumi, Takatsugu, Matsukizono, Hiroshi
• Application Number:
  US13/996,033
• Publication Number:
  US 20150108467A1
• Time in Patent Office: Days
• US Class Current: 257/43
• CPC Class Codes: G02F 1/134372 for fringe field switching [FFS] where the common electrode is not patterned
• CPC Class Codes: G02F 1/136286 Wiring, e.g. gate line, drain line
• CPC Class Codes: G02F 1/1368 in which the switching element is a three-electrode device G02F1/136277 takes precedence
• CPC Class Codes: H01L 23/564 Details not otherwise provided for, e.g. protection against moisture getters H01L23/26
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 27/1248 with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
• CPC Class Codes: H01L 27/1255 integrated with passive devices, e.g. auxiliary capacitors
• CPC Class Codes: H01L 29/66969 of devices having semiconductor bodies not comprising group 14 or group 13/15 materials comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials, comprising cuprous oxide or cuprous iodide H01L21/02365
• CPC Class Codes: H01L 29/78606 with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device H01L29/78642, H01L29/78645 take precedence
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H10K 59/1213 the pixel elements being TFTs
• CPC Class Codes: H10K 59/131 Interconnections, e.g. wiring lines or terminals

Abstract

A semiconductor device (100) according to the present invention is a semiconductor device with a thin-film transistor (10), and includes: a gate electrode (62) which has been formed on a substrate (60) as a part of the thin-film transistor (10); a gate insulating layer (66) which has been formed on the gate electrode (62); an oxide semiconductor layer (68) which has been formed on the gate insulating layer (66); a source electrode (70s) and a drain electrode (70d) which have been formed on the oxide semiconductor layer (68); a protective layer (72) which has been formed on the oxide semiconductor layer (68), the source electrode (70s) and the drain electrode (70d); an oxygen supplying layer (74) which has been formed on the protective layer (72); and an anti-diffusion layer (78) which has been formed on the oxygen supplying layer (74).

Claims

1-29. -29. (canceled)

30. A semiconductor device including a thin-film transistor, the device comprising:

a gate electrode which has been formed on a substrate as a part of the thin-film transistor;

a gate insulating layer which has been formed on the gate electrode;

an oxide semiconductor layer which has been formed on the gate insulating layer;

a source electrode and a drain electrode which are arranged on the oxide semiconductor layer as parts of the thin-film transistor;

a protective layer which has been formed on the oxide semiconductor layer and the source and drain electrodes;

an oxygen supplying layer which has been formed on the protective layer; and

an anti-diffusion layer which has been formed on the oxygen supplying layer,

wherein the oxygen supplying layer is made of a material including water (H₂O), an OR group, or an OH group.

31. The semiconductor device of claim 30, wherein the anti-diffusion layer is made of silicon dioxide, silicon nitride, or silicon oxynitride.

32. The semiconductor device of claim 30, wherein the protective layer is made of silicon dioxide or silicon nitride.

33. A display device comprising the semiconductor device of claim 30,

wherein the display device includes a pixel electrode which has been formed on the anti-diffusion layer, and

wherein the pixel electrode is connected to the drain electrode through a contact hole that runs through the protective layer, the oxygen supplying layer, and the anti-diffusion layer.

34. A fringe field type display device comprising the semiconductor device of claim 30,

wherein the display device includes:

a lower electrode which is arranged between the oxygen supplying layer and the anti-diffusion layer; and

an upper electrode which is arranged on the anti-diffusion layer and connected to the drain electrode of the thin-film transistor.

35. The semiconductor device of claim 30, wherein the oxide semiconductor layer is made of an In—

Ga—

Zn—

O based semiconductor.

36. A semiconductor device including a thin-film transistor, the device comprising:

a gate electrode which has been formed on a substrate as a part of the thin-film transistor;

a gate insulating layer which has been formed on the gate electrode;

an oxide semiconductor layer which has been formed on the gate insulating layer;

a source electrode and a drain electrode which are arranged on the oxide semiconductor layer as parts of the thin-film transistor;

a protective layer which has been formed on the oxide semiconductor layer and the source and drain electrodes;

an oxygen supplying layer which has been formed on the protective layer; and

an anti-diffusion layer which has been formed on the oxygen supplying layer,

wherein the oxygen supplying layer is made of an acrylic resin, an SOG material, a silicone resin, an ester polymer resin, or a resin including a silanol group, a CO—

OR group or an Si—

OH group.

37. The semiconductor device of claim 36, wherein the anti-diffusion layer is made of silicon dioxide, silicon nitride, or silicon oxynitride.

38. The semiconductor device of claim 36, wherein the protective layer is made of silicon dioxide or silicon nitride.

39. A display device comprising the semiconductor device of claim 36,

wherein the display device includes a pixel electrode which has been formed on the anti-diffusion layer, and

wherein the pixel electrode is connected to the drain electrode through a contact hole that runs through the protective layer, the oxygen supplying layer, and the anti-diffusion layer.

40. A fringe field type display device comprising the semiconductor device of claim 36,

wherein the display device includes:

a lower electrode which is arranged between the oxygen supplying layer and the anti-diffusion layer; and

an upper electrode which is arranged on the anti-diffusion layer and connected to the drain electrode of the thin-film transistor.

41. The semiconductor device of claim 36, wherein the oxide semiconductor layer is made of an In—

Ga—

Zn—

O based semiconductor.

42. A fringe field type display device comprising a semiconductor device including a thin-film transistor,

wherein the semiconductor device including:

a gate electrode which has been formed on a substrate as a part of the thin-film transistor;

a gate insulating layer which has been formed on the gate electrode;

an oxide semiconductor layer which has been formed on the gate insulating layer;

a source electrode and a drain electrode which are arranged on the oxide semiconductor layer as parts of the thin-film transistor;

a protective layer which has been formed on the oxide semiconductor layer and the source and drain electrodes;

an oxygen supplying layer which has been formed on the protective layer; and

an anti-diffusion layer which has been formed on the oxygen supplying layer,

wherein the display device includes;

a lower electrode which is arranged between the oxygen supplying layer and the anti-diffusion layer; and

an upper electrode which is arranged on the anti-diffusion layer and connected to the drain electrode of the thin-film transistor.

43. The display device of claim 42, wherein the anti-diffusion layer is made of silicon dioxide, silicon nitride, or silicon oxynitride.

44. The display device of claim 42, wherein the protective layer is made of silicon dioxide or silicon nitride.

45. The display device of claim 42,

wherein the display device includes a pixel electrode which has been formed on the anti-diffusion layer, and

wherein the pixel electrode is connected to the drain electrode through a contact hole that runs through the protective layer, the oxygen supplying layer, and the anti-diffusion layer.

46. The display device of claim 42, comprising a common line which is made of the same material as the gate electrode,

wherein the common line and the lower electrode are connected together through a contact hole that runs through the gate insulating layer, the protective layer, and the oxygen supplying layer.

47. The display device of claim 44, wherein the oxide semiconductor layer is made of an In—

Ga—

Zn—

O based semiconductor.