LIGHT-EMITTING DIODE

• US 20150108492A1
• Filed: 07/22/2014
• Published: 04/23/2015
• Est. Priority Date: 10/23/2013
• Status: Active Grant

• Current Assignee: Lextar Electronics Corporation
• Original Assignee: Lextar Electronics Corporation
• Inventors: Kuo, Shiou-Yi
• Granted Patent: US 9,006,775 B1
• Time in Patent Office: Days
• US Class Current: 257/76
• CPC Class Codes: H01L 33/382 the electrode extending partially in or entirely through the semiconductor body
• CPC Class Codes: H01L 33/42 Transparent materials
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating
• CPC Class Codes: H01L 33/46 Reflective coating, e.g. dielectric Bragg reflector

Abstract

A light-emitting diode (LED), including a first semiconductor layer defining several light-emitting regions and non-light-emitting regions; an active layer and a second semiconductor layer sequentially formed over the first semiconductor layer in the light-emitting regions; a transparent conductive layer formed over the second semiconductor layer; a Bragg reflector structure formed over the transparent conductive layer and including several first via holes; a metal layer formed over the Bragg reflector structure and connected to the transparent conductive layer through the first via holes; a passivation layer covering the metal layer and including several second via holes; several third via holes exposing the first semiconductor layer in the non-light-emitting regions; several first electrodes filling the third via holes and connected to the first semiconductor layer; and several second electrodes filling the second via holes and connected to the metal layer.

Claims

1. A light-emitting diode (LED), comprising:

a first semiconductor layer, defining a plurality of light-emitting regions and non-light-emitting regions;

an active layer;

a second semiconductor layer, wherein the active layer and the second semiconductor layer are sequentially formed over the first semiconductor layer in the light-emitting regions, and a plurality of light-emitting diode (LED) stack structures are formed by the first semiconductor layer in the light-emitting regions, the active layer, and the second semiconductor layer;

a transparent conductive layer, formed over the second semiconductor layer of the LED stack structures;

a Bragg reflector structure, formed over the transparent conductive layer and including a plurality of first via holes exposing the transparent conductive layer over the LED stack structures;

a metal layer, formed over the Bragg reflector structure and filling the first via holes, wherein the metal layer is connected to the transparent conductive layer over the LED stack structures through the first via holes;

a passivation layer, covering the metal layer and including a plurality of second via holes exposing the metal layer over the LED stack structures;

a plurality of third via holes, exposing the first semiconductor layer in the non-light-emitting regions;

a plurality of first electrodes, filling the third via holes and connected to the first semiconductor layer; and

a plurality of second electrodes, filling the second via holes and connected to the metal layer.

2. The LED as claimed in claim 1, wherein the height of the light-emitting regions exceeds that of the non-light-emitting regions.

3. The LED as claimed in claim 1, wherein the side-wall of the LED stack structures is covered by the Bragg reflector structure.

4. The LED as claimed in claim 3, wherein the Bragg reflector structure covering the side-wall of the LED stack structures is covered by the passivation layer.

5. The LED as claimed in claim 1, wherein the metal layer comprises Ag, Al, Rh, or a combination thereof.

6. The LED as claimed in claim 1, wherein the first semiconductor layer is a N-type III-V semiconductor layer, and the second semiconductor layer is a P-type III-V semiconductor layer.

7. The LED as claimed in claim 6, wherein the III-V semiconductor layer comprises a nitride having Ga.

8. The LED as claimed in claim 7, wherein the nitride comprises GaN, InGaN, or AlInGaN.

9. The LED as claimed in claim 1, further comprising a substrate with the first semiconductor layer formed thereon.

10. The LED as claimed in claim 1, wherein the first via holes and the third via holes are arranged in matrices.

11. The LED as claimed in claim 10, wherein each of the first via holes is surrounded by four of the third via holes.

12. The LED as claimed in claim 11, wherein the Bragg reflector structure further includes a plurality of trenches exposing the transparent conductive layer and filled with the metal layer, wherein each of the trenches is situated between two of the adjacent first via holes for connecting those.

13. The LED as claimed in claim 10, wherein each of the third via holes is surrounded by four of the first via holes.

14. The LED as claimed in claim 13, wherein the Bragg reflector structure further includes a plurality of trenches exposing the transparent conductive layer and filled with the metal layer, wherein each of the trenches is situated between two of the adjacent third via holes for connecting those.

15. The LED as claimed in any one of claims 1, further comprising a current blocking layer formed between the transparent conductive layer and the second semiconductor layer of the LED stack structures, underneath the first via holes.