LIGHT-EMITTING DEVICE HAVING LIGHT-EMITTING ELEMENTS

• US 20150108497A1
• Filed: 12/26/2014
• Published: 04/23/2015
• Est. Priority Date: 08/29/2002
• Status: Abandoned Application

• Current Assignee: Seoul Semiconductor Co., Ltd.
• Original Assignee: Seoul Semiconductor Co., Ltd.
• Inventors: Sakai, Shiro, Ao, Jin-Ping, Ono, Yasuo
• Application Number:
  US14/583,476
• Publication Number:
  US 20150108497A1
• Time in Patent Office: Days
• US Class Current: 257/76
• CPC Class Codes: H01L 2224/24 of an individual high density interconnect connector
• CPC Class Codes: H01L 27/15 including semiconductor components having potential barriers, specially adapted for light emission
• CPC Class Codes: H01L 27/153 in a repetitive configuration, e.g. LED bars
• CPC Class Codes: H01L 27/156 two-dimensional arrays
• CPC Class Codes: H01L 33/08 with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body H01L27/15 takes precedence
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/42 Transparent materials
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

A light-emitting device including a substrate, a first electrode pad and a second electrode pad disposed on the substrate and spaced apart each other, and at least two arrays connected in parallel between the first and the second electrode pads. The at least two arrays include a first array and a second array, each of the at least two arrays include GaN-based light-emitting elements connected in series, the first electrode pad and the second electrode pad are disposed on a non-light-emitting first region of the substrate spaced apart from a light-emitting second region of the substrate, and the first electrode pad and the second electrode pad surround at least a portion of outer edges comprising a circumference of the at least two arrays.

Claims

1. A light-emitting device, comprising:

a substrate;

a first electrode pad and a second electrode pad disposed on the substrate and spaced apart each other; and

at least two arrays connected in parallel between the first and the second electrode pads;

wherein;

the at least two arrays comprise a first array and a second array;

each of the at least two arrays comprise GaN-based light-emitting elements connected in series;

the first electrode pad and the second electrode pad are disposed in a non-light-emitting first region spaced apart from a light-emitting second region; and

the first electrode pad and the second electrode pad surround at least a portion of outer edges comprising a circumference of the at least two arrays.

2. The light-emitting device of claim 1, wherein each of the at least two arrays comprises at least two GaN-based light-emitting elements sharing an electrode.

3. The light-emitting device of claim 1, wherein each GaN-based light-emitting element comprises:

an n-type semiconductor layer;

a p-type semiconductor layer; and

an active layer disposed between the n-type semiconductor layer and the p-type semiconductor layer,

wherein each of the first and second electrode pads is electrically connected to the n-type semiconductor layer or the p-type semiconductor layer of each GaN-based light-emitting element through wiring.

4. The light-emitting device of claim 1, wherein an overall shape of the GaN-based light emitting elements and the electrode pads together is approximately square.

5. The light-emitting device of claim 1, wherein the GaN-based light-emitting elements are disposed in a two-dimensional pattern on the substrate.

6. The light-emitting device of claim 1, wherein the first electrode pad and the second electrode pad have opposing polarities.

7. The light-emitting device of claim 1, wherein the GaN-based light-emitting elements are disposed in a zigzag pattern in the first array.

8. The light-emitting device of claim 1, wherein the first electrode pad and the second electrode pad diagonally face each other.

9. The light-emitting device of claim 1, wherein the first array and the second array are symmetrically disposed on the substrate.

10. The light-emitting device of claim 1, wherein:

each GaN-based light-emitting element comprises a first electrode and a second electrode; and

one GaN-based light-emitting element of the first array and one GaN-based light-emitting element of the second array share the first electrode.

11. The light-emitting device of claim 1, wherein the GaN-based light-emitting elements are disposed only in the light-emitting second region.