CHIP ELECTRONIC COMPONENT AND MANUFACTURING METHOD THEREOF

• US 20150109088A1
• Filed: 10/16/2014
• Published: 04/23/2015
• Est. Priority Date: 10/22/2013
• Status: Active Grant

• Current Assignee: Samsung Electro-Mechanics Co., Ltd. (Samsung Group)
• Original Assignee: Samsung Electro-Mechanics Co., Ltd. (Samsung Group)
• Inventors: KIM, Sung Hyun, KIM, Tae Young, CHA, Hye Yeon, PARK, Myoung Soon, KIM, Sung Hee
• Granted Patent: US 9,773,611 B2
• Time in Patent Office: Days
• US Class Current: 336/200
• CPC Class Codes: H01F 17/0013 with stacked layers
• CPC Class Codes: H01F 2017/0066 with a magnetic layer
• CPC Class Codes: H01F 2017/048 with encapsulating core, e.g. made of resin and magnetic powder
• CPC Class Codes: H01F 41/12 Insulating of windings impregnating or encapsulating of transformers H01F41/005 ; of conductors in general H01B13/06

Abstract

A chip electronic component may include: a magnetic body having a coil conductive pattern part embedded therein; and an oxide insulating film formed on a surface of the coil conductive pattern part. Even in the case that the insulating film is formed to be thinner than an insulating film, it may prevent the coil conductive pattern part from being exposed, whereby a magnetic material and the coil conductive pattern part may not contact each other. Therefore, a waveform defect may be prevented at a high frequency.

Claims

1. A chip electronic component comprising:

a magnetic body in which a coil conductive pattern part is embedded; and

an oxide insulating film disposed on a surface of the coil conductive pattern part.

2. The chip electronic component of claim 1, further comprising a polymer insulating film coating the oxide insulating film.

3. The chip electronic component of claim 1, wherein the oxide insulating film is formed of a metallic oxide containing at least one metal forming the coil conductive pattern part.

4. The chip electronic component of claim 1, wherein the oxide insulating film has a surface roughness Ra of about 0.6 μ

m to about 0.8 μ

m.

5. The chip electronic component of claim 1, wherein a surface roughness Ra of the oxide insulating film formed on an upper surface of the coil conductive pattern part is greater than a surface roughness of the oxide insulating film formed on a side surface of the coil conductive pattern part.

6. The chip electronic component of claim 1, wherein the oxide insulating film has a thickness of about 0.5 μ

m to about 2.5 μ

m.

7. The chip electronic component of claim 1, wherein an average thickness of the oxide insulating film formed on an upper surface of the coil conductive pattern part is greater than an average thickness of the oxide insulating film formed on a side surface of the coil conductive pattern part.

8. The chip electronic component of claim 1, wherein a thickness of the oxide insulating film formed on an upper surface of the coil conductive pattern part has a thickness of about 1.8 μ

m to about 2.5 μ

m.

9. The chip electronic component of claim 1, wherein the oxide insulating film formed on a side surface of the coil conductive pattern part has a thickness of about 0.8 μ

m to about 2 μ

m.

10. The chip electronic component of claim 2, wherein a shape of a surface of the polymer insulating film corresponds to a shape of the surface of the coil conductive pattern part.

11. The chip electronic component of claim 2, wherein the polymer insulating film has a thickness of about 1 μ

man to about 3 μ

m.

12. The chip electronic component of claim 2, wherein an average thickness ratio between the oxide insulating film and the polymer insulating film is 1:

1.2 to 1;

3.

13. The chip electronic component of claim 1, wherein a region between adjacent patterns of the coil conductive pattern part is filled with a magnetic material.

26. The chip electronic component of claim 1, wherein the oxide insulating film is manufactured by a method comprising:

forming the oxide insulating film by oxidizing the outer layer of the coil.

27. The chip electronic component of claim 26, wherein the oxide insulating film layer is manufactured by a method comprising:

forming the oxide insulating film by exposing the coil in a high temperature or high humidity environment or through chemical etching.

28. The chip electronic component of claim 27, wherein the oxide insulating film has a surface roughness Ra of about 0.6 μ

m to about 0.8 μ

m.

14. A chip electronic component comprising:

a magnetic body including an insulating substrate;

a coil conductive pattern part provided on at least one surface of the insulating substrate;

a first insulating film provided on a surface of the coil conductive pattern part; and

a second insulating film coating the first insulating film.

15. The chip electronic component of claim 14, wherein the first insulating film is formed of a metallic oxide having at least one metal contained in the coil conductive pattern part.

16. The chip electronic component of claim 14, wherein the second insulating film contains a polymer, and

a shape of a surface of the second insulating film corresponds to a shape of the surface of the coil conductive pattern part.

17. The chip electronic component of claim 14, wherein the first insulating film has a surface roughness Ra of about 0.6 μ

m to about 0.8 μ

m.

18. The chip electronic component of claim 14, wherein a surface roughness Ra of the first insulating film formed on an upper surface of the coil conductive pattern part is greater than a surface roughness of the first insulating film formed on a side surface of the coil conductive pattern part.

19. The chip electronic component of claim 14, wherein an average thickness of the first insulating film formed on an upper surface of the coil conductive pattern part is greater than an average thickness of the first insulating film formed on a side surface of the coil conductive pattern part.

20. The chip electronic component of claim 14, wherein a region between adjacent patterns of the coil conductive pattern part is filled with a magnetic material.

29. The chip electronic component of claim 14, wherein the oxide insulating film is manufactured by a method comprising:

forming the oxide insulating film by oxidizing the outer layer of the coil.

30. The chip electronic component of claim 29, wherein the oxide insulating film layer is manufactured by a method comprising:

forming the oxide insulating film by exposing the coil in a high temperature or high humidity environment or through chemical etching.

31. The chip electronic component of claim 30, wherein the oxide insulating film has a surface roughness Ra of about 0.6 μ

m to about 0.8 μ

m.

21. A method of manufacturing a chip electronic component, the method comprising:

forming a coil conductive pattern part on at least one surface of an insulating substrate;

forming an oxide insulating film on a surface of the coil conductive pattern part; and

stacking magnetic material layers above and below the insulating substrate having the coil conductive pattern part formed thereon to form a magnetic body.

22. The method of claim 21, further comprising forming a polymer insulating film coating the oxide insulating film.

23. The method of claim 21, wherein the oxide insulating film is formed by oxidizing the surface of the coil conductive pattern part.

24. The method of claim 21, wherein the oxide insulating film is formed to have a surface roughness Ra of about 0.6 μ

m to about 0.8 μ

m.

25. The method of claim 21, wherein the oxide insulating film formed on an upper surface of the coil conductive pattern part is formed be thicker than the oxide insulating film formed on a side surface of the coil conductive pattern part.